JPS6210025B2 - - Google Patents

Info

Publication number

JPS6210025B2

JPS6210025B2 JP2632380A JP2632380A JPS6210025B2 JP S6210025 B2 JPS6210025 B2 JP S6210025B2 JP 2632380 A JP2632380 A JP 2632380A JP 2632380 A JP2632380 A JP 2632380A JP S6210025 B2 JPS6210025 B2 JP S6210025B2

Authority

JP

Japan

Prior art keywords

wiring

layer

conductivity type

semiconductor

substrate

Prior art date

1980-03-03

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000004065 semiconductor Substances 0.000 claims description 65
• 239000000758 substrate Substances 0.000 claims description 52
• 230000000149 penetrating effect Effects 0.000 claims 2
• 238000009792 diffusion process Methods 0.000 description 14
• 238000000034 method Methods 0.000 description 12
• 229910052751 metal Inorganic materials 0.000 description 7
• 239000002184 metal Substances 0.000 description 7
• 238000005516 engineering process Methods 0.000 description 6
• 238000010586 diagram Methods 0.000 description 5
• 238000004519 manufacturing process Methods 0.000 description 5
• 239000012535 impurity Substances 0.000 description 4
• 230000008569 process Effects 0.000 description 4
• 230000007797 corrosion Effects 0.000 description 3
• 238000005260 corrosion Methods 0.000 description 3
• 230000010354 integration Effects 0.000 description 3
• 230000005012 migration Effects 0.000 description 3
• 238000013508 migration Methods 0.000 description 3
• 230000003071 parasitic effect Effects 0.000 description 3
• 239000000126 substance Substances 0.000 description 3
• 238000007740 vapor deposition Methods 0.000 description 3
• KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
• 230000008878 coupling Effects 0.000 description 2
• 238000010168 coupling process Methods 0.000 description 2
• 238000005859 coupling reaction Methods 0.000 description 2
• 238000005530 etching Methods 0.000 description 2
• 230000005669 field effect Effects 0.000 description 2
• 239000012212 insulator Substances 0.000 description 2
• 238000004904 shortening Methods 0.000 description 2
• 229910000077 silane Inorganic materials 0.000 description 2
• 238000005979 thermal decomposition reaction Methods 0.000 description 2
• DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
• ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 230000002378 acidificating effect Effects 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 230000015572 biosynthetic process Effects 0.000 description 1
• 229910052796 boron Inorganic materials 0.000 description 1
• 238000004140 cleaning Methods 0.000 description 1
• 238000004891 communication Methods 0.000 description 1
• 238000007796 conventional method Methods 0.000 description 1
• 238000013461 design Methods 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 230000006872 improvement Effects 0.000 description 1
• WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
• 230000007257 malfunction Effects 0.000 description 1
• 239000000463 material Substances 0.000 description 1
• 230000003647 oxidation Effects 0.000 description 1
• 238000007254 oxidation reaction Methods 0.000 description 1
• 230000001590 oxidative effect Effects 0.000 description 1
• 238000012545 processing Methods 0.000 description 1
• 238000000197 pyrolysis Methods 0.000 description 1
• 230000009467 reduction Effects 0.000 description 1
• 229910052594 sapphire Inorganic materials 0.000 description 1
• 239000010980 sapphire Substances 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• 229910052596 spinel Inorganic materials 0.000 description 1
• 239000011029 spinel Substances 0.000 description 1
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1