JPS6197958A - 注入形論理半導体装置 - Google Patents

注入形論理半導体装置

Info

Publication number
JPS6197958A
JPS6197958A JP59219621A JP21962184A JPS6197958A JP S6197958 A JPS6197958 A JP S6197958A JP 59219621 A JP59219621 A JP 59219621A JP 21962184 A JP21962184 A JP 21962184A JP S6197958 A JPS6197958 A JP S6197958A
Authority
JP
Japan
Prior art keywords
type
region
buried region
type buried
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59219621A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442829B2 (enrdf_load_stackoverflow
Inventor
Norihide Kinugasa
教英 衣笠
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP59219621A priority Critical patent/JPS6197958A/ja
Publication of JPS6197958A publication Critical patent/JPS6197958A/ja
Publication of JPH0442829B2 publication Critical patent/JPH0442829B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59219621A 1984-10-19 1984-10-19 注入形論理半導体装置 Granted JPS6197958A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59219621A JPS6197958A (ja) 1984-10-19 1984-10-19 注入形論理半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59219621A JPS6197958A (ja) 1984-10-19 1984-10-19 注入形論理半導体装置

Publications (2)

Publication Number Publication Date
JPS6197958A true JPS6197958A (ja) 1986-05-16
JPH0442829B2 JPH0442829B2 (enrdf_load_stackoverflow) 1992-07-14

Family

ID=16738393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59219621A Granted JPS6197958A (ja) 1984-10-19 1984-10-19 注入形論理半導体装置

Country Status (1)

Country Link
JP (1) JPS6197958A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0442829B2 (enrdf_load_stackoverflow) 1992-07-14

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