JPS6194384A - Manufacture of hall element - Google Patents

Abstract

PURPOSE:To obtain a Hall element by a method wherein a semiconductor thin- film is evaporated on a substrate, an electrode is formed, the whole is cut to a predetermined shape and a cutting section is bonded and fixed between first and second magnetic materials. CONSTITUTION:A thin-film 2 consisting of InSb is evaporated on a mica board 1, Cu electrodes 3 are evaporated, and the whole is cut to a prescribed shape. The cutting section is fixed onto a first magnetic material 4 by electric insulating adhesive while the electrodes 3 are directed upward. A second magnetic material 5 is fastened to the thin-film 2 by the same adhesives. Lead wires 6 are connected to the electrodes 3, and sections on the magnetic material 4 are coated integrally with an epoxy resin 7. The magnetic materials 4, 5 are composed of ferrite plate silicon steel plates, etc. The thin-film is formed to the predetermined shape through cutting, thus eliminating an adverse effect by a developer and simplifying operation, thus exerting no damage to the thin- film caused by peeling.

Description

[Detailed description of the invention] (Industrial application field) The present invention relates to a method for manufacturing a Hall element.

(Prior art) Conventionally, as a method for manufacturing a Hall element,
As described in Japanese Patent No. 5234, an InSb vapor-deposited film is formed as a semiconductor thin film on a mica substrate, a first magnetic material is adhered to the vapor-deposited film using an adhesive, and then the mica substrate is attached to the mica substrate from the vapor-deposited film. Then, the deposited film is photo-etched so that it has the desired shape and dimensions. However, the method using photolithography involves covering the vapor deposited film with resist, exposing the desired pattern to light, dissolving and removing the resist and vapor deposited film in the unexposed areas, and then immersing it in a developer to photocure and remove the resist. Since the vapor deposited film is formed into the required shape and dimensions by It is also necessary to be careful about adhesion.

Furthermore, when the mica substrate is peeled off from the deposited film, there is a risk of damaging the deposited film.

[Problem that the invention seeks to solve]

The present invention eliminates the complicated steps required for photoetching by not using a photolithography method when forming and covering a semiconductor thin film in a predetermined shape, eliminates the adverse effects of a developer on the semiconductor thin film, and furthermore, This is intended to prevent damage to the semiconductor thin film when it is peeled off from the semiconductor thin film.

(Means for Solving the Problems) The present invention comprises a step of depositing a semiconductor thin film on an adult fish@substrate;
A step of forming an electrode on this semiconductor thin film, and cutting the semiconductor thin film including this electrode into a predetermined shape together with the substrate to be deposited! The semiconductor thin film is formed into a desired shape by cutting without using photolithography. This eliminates the trouble of photolithography, eliminates the adverse effects of the developer, and prevents the loss 1u of the semiconductor 11fl caused by the peeling off of the substrate to be deposited.

[Effect]

In the present invention, a desired shape is obtained by cutting a semiconductor thin film deposited on a substrate to be vapor-deposited into a predetermined shape along with the substrate.

[Example] Next, an example of the method of the present invention will be described with reference to the accompanying drawings.

(1) Thickness 50 to 1 made of mica, etc. shown in Figure 1
As shown in FIG. 2, a semiconductor thin film 2 of TnSb or the like is deposited on a substrate 1 to have a thickness of 0.5 IM to 2 μm. The substrate 1 to be vapor-deposited needs to have a crystal structure similar to that of the semiconductor to be vapor-deposited, and the surface to be vaporized needs to be smooth.

(2) Next, the electrode 3 is formed by depositing copper on a predetermined Itr layer on the semiconductor thin film 2. FIG. 3 is a plan view thereof, and FIG. 4 is a longitudinal sectional front view thereof.

(3) Next, the semiconductor thin film 2 and the deposition target substrate 1 are cut into a predetermined shape. FIG. 5 is a plan view thereof, and FIG. 6 is a sectional front view thereof. The cutting method is performed using a laser, an electron beam, or a knife.

(4) Next, the semiconductor core 11 is placed on the top surface of the first magnetic body 4!
2. Substrate 1 on which electrodes 3 are formed and cut into a predetermined shape
Glue and fix with adhesive. Figure 7 is the plan view,
FIG. 8 is a longitudinal sectional front view thereof.

As the first magnetic body 4, a ferrite plate, a permalloy plate, a silicon steel plate, etc. are used, and as the adhesive, an electrically insulating adhesive such as an epoxy resin type or a phenol resin type is used.

(5) Next, the second magnetic tA5 is adhesively fixed to the semiconductor thin film 2 with an adhesive. FIG. 9 is a plan view thereof, and FIG. 10 is a longitudinal sectional front view thereof. The second magnetic body 5 and the adhesive used are the same as those of the first magnetic body 4 and the adhesive.

(6) Next, connect the lead wire 6 to the electrode 3. Then, the substrate 1, the semiconductor thin film 2, the electrode 3, the connecting portion of the lead wire 6, and the second magnetic body 5 are integrally covered on the first magnetic body 4 with an epoxy resin-based protective film 7. Figure 11 is the plan view,
FIG. 12 is a longitudinal sectional front view thereof.

The substrate 1 to be vaporized is a large plate that is not divided into individual pieces, and the semiconductor thin film 2 is vapor-deposited thereon.After forming a large number of electrodes 3, the semiconductor thin film 2 and the substrate 1 are formed into a predetermined shape. According to the present invention, a semiconductor thin film is vapor-deposited on a substrate to be vapor-deposited, a step is formed on this semiconductor thin film, and a semiconductor thin film including this electrode is placed in a predetermined position together with the substrate to be vapor-deposited. To form the semiconductor thin film into a predetermined shape, the semiconductor thin film is formed into a predetermined shape by photolithography. In order to form by cutting, resist coating by photolithography, exposure,
There is no need for complicated operations such as development and cleaning, and there is no risk that the semiconductor thin film will be adversely affected by the phenomenon liquid.Furthermore, when cutting the semiconductor thin film, it is possible to cut the semiconductor thin film together with the substrate to be vapor-deposited. It is possible.

Furthermore, since the semiconductor thin film is not peeled off from the substrate to be deposited, the semiconductor 7i1. No membrane damage.

BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 12 are manufacturing process explanatory diagrams showing one embodiment of the present invention. 1. Substrate to be evaporated, 2. Semiconductor thin film, 3. Electrode, 4
．． 5...Magnetic material.

Claims (1)

[Claims] (1) Depositing a semiconductor thin film on a substrate to be deposited, forming an electrode on the semiconductor thin film, cutting the semiconductor thin film including the electrode into a predetermined shape together with the substrate to be deposited, and cutting the semiconductor thin film into a predetermined shape together with the substrate to be deposited. A method for manufacturing a Hall element, comprising the step of adhesively fixing a semiconductor thin film together with a substrate to be deposited between first and second magnetic bodies.