JPS6190190A - Semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Application of the Invention The present invention relates to solid-state display devices, image sensors, etc., which solidify display parts of microcomputers, word processors, televisions, etc. by providing a display element, preferably a liquid crystal display panel. Alternatively, the present invention relates to a semiconductor device having nonlinear characteristics that is applied to a liquid crystal printer.

``Prior Art'' For solid-state display panels, a system in which each picture element is controlled independently is effective for large-area displays. A panel using such active elements has 640 elements in the horizontal direction (640 x 3 = 1920 elements in the case of full color) and 20 elements in the vertical direction.
A display device having a surface area matrix configuration of 14 sizes or more with 0 elements or 526 elements is known. However, in such a large area, the − side is 20 cm.
Since the mask was 30 cm wide, an error occurred between one diagonal line and the other due to glass-like thermal expansion, and this error was an extremely large obstacle for highly accurate mask alignment. .

``Problems to be Solved by the Invention'' However, in such large-area display devices, the accuracy of mask alignment is limited to ±15% due to errors caused by thermal expansion of the substrate.
Desiring to reduce the thickness to less than μ has led to an increase in manufacturing costs.

Therefore, in the present invention, one electrode of the liquid crystal is rectangular, and an electrode having the same shape as the nonlinear element disposed parallel to the negative side and the element on the upper surface of the rectangular electrode is arranged at the upper end, lower end, or center of the rectangular electrode. It is characterized by having an element configuration that can be crossed anywhere.

"Means for Solving the Problem" In order to solve the problem, the present invention makes one electrode of the liquid crystal and the nonlinear element common, and the common electrode is made rectangular. The device can operate no matter where the semiconductor and the electrode (second electrode) are placed across the rectangular electrode. As a result, when the rectangular electrode is 420μ x 420μ, the mask alignment accuracy is within ±200μ (when the second electrode and the nonlinear element below it have a width of 20μ, that is, 20μ x 420μ). Now I can give. Furthermore, the nonlinear element used in this invention uses a non-single crystal half door body, and its material composition is 5i (N) - 5ix
C, -x (0<X≦1) (1) -Si (N) structure or 5i(N)-5ixC1-x (0<X<1) (1
) −5ixC1−x(0<X≦1)(1) −
5ixC,-x(0<X4)(1)-Si(N) structure (
However, N is N type, ■ is intrinsic or substantially intrinsic, (I)
indicates a barrier layer) or a modified structure thereof.

The nonlinear element used in the present invention has ohmic contact with each of the pair of electrodes, but has reverse rectification characteristics (14
A typical example of this is an N-type semiconductor device, an N-type semiconductor device, which is a composite diode formed by stacking an N-type semiconductor, an I-type (hereinafter referred to as intrinsic or substantially intrinsic) semiconductor, and an N-type half-gate body.
Including semiconductors with an IN structure, that is, an NIN junction in which an NI junction and an IN junction are electrically connected in opposite directions and integrated as a semiconductor, as well as its variations NN-N, N
It is a composite diode having a PN, PIP, PP-P or PN-P structure.

The threshold voltage of such a composite diode makes the diode characteristics opposite to each other, and its build-in (rise) voltage (threshold) is determined by the conduction at or near the N-type semiconductor and I-type semiconductor or Nl interface of the NI junction. It can be determined by the concentration of impurities such as a trace amount of phosphorus, which determines the type, and of impurities and additives, such as carbon, which determine the energy band width (the height and thickness of the barrier (1) in the transition region). Therefore, by controlling the manufacturing process, it is possible to control the value of the threshold voltage of a desired element, the difficulty of current flow below the threshold value, and the ease of current flow above the threshold value.

Furthermore, the present invention can be completed by simply matching one mask in which the X wiring constituting the composite diode and the matrix and the nonlinear element thereunder have approximately the same shape. One electrode (third electrode) of the display and one electrode (first electrode) of the combined diode connected to a common rectangular electrode, and an X wiring on the semiconductor above it (in the drawing, only the X wiring Therefore, the process can be carried out using only two masks consisting of the second mask necessary for forming the X wiring (hereinafter representatively referred to as the X wiring). A typical example of the structure of the present invention is shown in FIG.

Furthermore, for solid-state display elements such as liquid crystals, AC bias is applied to the other electrode (fourth electrode) of the liquid crystal, leads are wired in the Y direction, and the electrical level is controlled to achieve full color and gradation. It also has the feature of being controllable.

"Function" Thus, even for large-area matrixing of A4 size or larger, the alignment accuracy is within ±200μ, and the second mask alignment accuracy in the Y direction is 10 times lower than the conventional mask alignment accuracy of ±15μ. This can ensure that the mask does not shift. In addition, with respect to alignment accuracy in the X direction, by setting the second electrode and the lead connected to it to be the same [11],
The process became possible with a low alignment accuracy of 00 μm or less (theoretically within ±3 mm).

In addition, as shown in Figure 3, the other Y wiring and electrodes of the liquid crystal are divided into three parts, and red (referred to as R), green (referred to as G), and blue (referred to as B) correspond to each electrode or each active element. By passing the voltage through the filter, a voltage can be applied independently to that level on the Y axis. Therefore, it has the feature that it is possible to perform gradations for R, G, and B.

The present invention will be explained below according to examples.

"Example 1" FIG. 1 shows a circuit diagram using the solid state display device of the present invention.

In the drawing, the picture element is the electrode (2) of the composite diode (2).
1) One electrode (23) of the liquid crystal (3) from (the first electrode)
) (third electrode). The compound diode is connected to the address lines (4) and (5) of the X wiring that provides the clock signal.
is connected to by a second electrode (22).

On the other hand, the fourth electrode (24) of the liquid crystal (3) is connected to the data lines (6) and (7) of the Y wiring. The Y wiring corresponds to one third electrode (23) and is connected to a fourth electrode (24) divided into three. This fourth electrode (14) has R (red), G (green), and B (blue) filters, providing full color.

This X wiring is connected to the same insulating substrate, typically a glass substrate (fourth
(20) in Figures (B), (C), and (D)
) on the other fourth electrode of the liquid crystal (3) ((6-1), (6-2 in FIG. 1, FIG. 4(C))
), (6-3), i.e., (6) or (24)) is provided on the opposite translucent insulating substrate, typically a glass substrate ((20') in FIG. 4(C)). There is.

Such picture elements are arranged in a matrix, and in the drawing, 2 x
2 x 3 (R, G, B) was shown. However, the present invention does not use such a small matrix, but a scaled-up display device such as (640 pixels x 3 (R, G, B
) It is effective for large matrix panels such as X20 or 512).

Examples of nonlinear elements using such composite diodes and their characteristics are shown in FIGS. 2 and 3.

This FIG. 2 will be abbreviated below.

FIG. 2(A) shows a longitudinal cross-sectional view of an actual device structure.

In FIG. 2(A), non-alkali glass (20) was used as the light-transmitting insulating substrate. On this upper surface, a conductive film of ITO or tin oxide was formed to a thickness of 0.1 to 0.5 μm by sputtering or electron beam evaporation. Thereafter, this conductive film was patterned using a first mask (2), unnecessary portions were removed, and electrodes were formed.

After this, NI is applied to the entire surface by plasma vapor phase reaction method.
A composite diode made of a non-single crystal semiconductor having an N (including N(I) I(I)N) structure was formed. That is, N
A non-single-crystal semiconductor having an amorphous structure is produced on the formation surface of the substrate kept at 300 to 400° C. by subjecting the type semiconductor (12) to silane and subjecting it to high-frequency glow discharge at 13.56 MHz. Its electrical conductivity is 10-'
~10-' (0 cm)-' and a thickness of 50 to 500 people. Further, the chamber was sufficiently evacuated to 10-6 to 10-7 torr. Furthermore, silane (SimHz
Methylsilane (S
illn(CH:+)4-nn=1-3) was mixed. That is, for n = 2, JSi(Cll z)z/5
By setting i114=1/10 to 1/200 to 1=1, an extremely thin block layer (barrier layer) (■) layer) was made to prevent the backflow of phosphorus impurities to the first layer. Furthermore, only the silane is subjected to a plasma reaction, and the non-photosensitive non-single crystal semiconductor (13) of type 500 is made into a thickness of 500 to 1μ, for example, 0.2μ.
It was formed by laminating it on an N-type semiconductor or a barrier layer to a thickness of . Furthermore, the vacuum was sufficiently evacuated to 10"b to 10-' torr. Again, the same barrier layer or N-type semiconductor (14) was made into an amorphous structure and the
NIN junction or N(1)I(1
) N junction ((I) is a barrier layer, but will be omitted below for simplicity).

After this, 5n02 or I as CTF is applied to this top surface.
TO to a thickness of 500 to 1500 mm, and chromium or aluminum (500 to 150 mm thick) for leads and electrodes.
500 people) were laminated by electron beam evaporation or sputtering. Further, an electrode (22), a composite diode (
Except for the region provided as 2), the remaining portion was removed by photo-etching using a second photomask (2) to form a second electrode.

That is, in FIG. 2(A), a first electrode (21) made of a transparent conductive film (17) on a glass substrate (20),
N(12) I(13) N(14) NIN junction type composite diode (2) made of semiconductor stacked body, CT
F (15), chrome or aluminum (16)
The second electrode (22) is made of: This NI
The symbol for the N structure is shown in FIG. 2(B).

As a result, a nonlinear characteristic (31) as shown in FIG. 3 is obtained.

(32) can be provided corresponding to FIG.

Furthermore, when carbon is added to the interface between the N layer and the first layer or in the vicinity thereof, the threshold value at +Va becomes higher than the forward threshold value of 1 to 2 V in the forward direction of a simple PIN type diode characteristic, and the liquid crystal display For example, the voltage can be higher than the optimum voltage for the element, such as IOV. In addition, 5ix with a small amount of carbon added in one layer
When C, -x (0 < .

"Embodiment 2" The configuration of the present invention is shown in FIG. 4, which includes a plan view (A) and a sectional view (
B), (C), and (D) are shown.

Furthermore, Fig. 4 (B), (C), and (D) are (A
) respectively A-A', B-B', C-C
A longitudinal cross-sectional view at ' is shown. In addition, Figure 4 (C) shows the liquid crystal (
3) and upper electrodes (6), (7) and substrate (2)
0') is also shown, but the other (A) and (B) are also shown.

(D) shows only the side having nonlinear elements for simplicity.

The manufacturing method of this element is the same as in Example 1.

That is, the rectangular first electrode (21) is formed by the first mask (2).
and a third electrode (23). This electrode is 420μ×420μ here, and furthermore, N(12
) I (13) N (14) is constructed according to Example 1. Furthermore, materials for the upper electrodes (15) and (16) are formed over the entire surface. Next, using a second photomask (2), chromium or aluminum was plasma-etched on the leads (4), (5) and the second electrode (22) to the same width (here, 20 μm) using CCL. Another 5nOz
(15) The semiconductor (2) was removed by etching.

At this time, the electrodes (22
), the electrode next to this (22'), and the lead between them (22').
25) (FIG. 4B) were made to have the same width, and the accuracy with respect to pattern deviation in the lateral direction was set to ±200 μm or less. Then, even if the pattern shifts in the left-right direction in FIG. 4(A), it does not affect the manufacturing yield at all. Furthermore, since the second electrode is provided above the rectangular first and third electrodes, if its position is initially at the center, the electrode area of the nonlinear element is unnecessary even if it is shifted up to ±200 μ above and below. Therefore, patterning is possible without affecting the electrical characteristics at all.

That is, even if the mask is misaligned, for example, between the upper cloth edge and the lower edge of a 640 x 512 element, it is now possible to align the mask with an accuracy 1710 times worse than that of the conventional technique.

Thus, by using the second mask (2) that performs one overlapping process, the leads (4) in the X direction are formed into approximately the same shape.
(5) A second electrode (22), a semiconductor (2), and a composite diode could be formed.

Furthermore, as is clear from FIG. 4(B), the first electrode (21) of one element and the first electrode (25) of the adjacent element
) had a width of 20μ). Therefore, this crosstalk between the electrodes could be prevented whether the display element was irradiated with light in a transmissive or reflective manner.

Furthermore, the other fourth electrode (24) of the opposing liquid crystal.

Leads (6) were formed as wiring in the Y direction using another first mask (2).

After this, for each of the wirings in the Y direction, a red filter is applied to the electrodes (6-1) and (7-1) by a known electrodeposition method, and a red filter is applied to the electrodes (6-2) and (7-2). A green filter was formed for (6-3) and (7-3), and a blue filter was formed for (6-3) and (7-3). Thereafter, polyimide such as PIQ is coated to form a protective film, and this Pl,
Q was subjected to orientation treatment.

For this full coloring, a dyeing method may be used instead of the electrodeposition method. This method first forms R, G, and B filters on a glass substrate, then creates a passivation film.
In this film (6-1), (6-2), (6-3)
, (7-1)... were divided into three to form electrodes.

In this way, three electrodes could be provided corresponding to one lower electrode.

From the above, it is only necessary to use three types of masks to form one active picture element on this surface, and particularly in that case, it has the advantage that only two overlapping masks (one time) are required.

Furthermore, another opposing insulating substrate (20') is placed about 6 to 10 times
After evacuating the gap by a width of μ, a known liquid crystal (10) was sealed.

As a display panel, the peripheral circuit (8) shown in FIG.
) and (9) were arranged on a printed circuit board, and the leads of this printed circuit board were connected to the leads of the display element in correspondence with each other.

(Thus, it became possible to pattern an active element type panel using only three masks.

"Effect" As described above, the present invention makes the first electrode of the nonlinear element and the third electrode of the liquid crystal common and have a rectangular shape, and the -
A second electrode of the nonlinear element was provided on the semiconductor parallel to the side. Therefore, the electrode area of the nonlinear element does not change even if it is shifted up or down by ±200μ from the center of the rectangular electrode (it has certain nonlinear characteristics, and the electrical characteristics of active drive to the entire matrix It was possible to prevent variations in the

In addition, since the semiconductor remains both under the second electrode and its lead, patterning can be performed with extremely low alignment accuracy even with respect to misalignment in the X direction.

In addition, by adding a larger amount of carbon to the NI/IN junction interface or its vicinity to form a barrier layer than inside, it is possible to form a barrier layer or widen Eg, thereby reducing current at voltages below the threshold. Process control can be performed for characteristics that flatten and steepen the current at voltages above this threshold.

Furthermore, since the diode and the electrode lead are integrated, patterning can be performed with an extremely small number of masks (three) (overlapping once), and manufacturing yield can be improved.

It is an alternating current drive system, and has the feature that it is easy to control gradation because the threshold value of the diode can be controlled by the process conditions during stacking of semiconductor layers using a gas phase reaction method.

In the present invention, carbon was added to the (I) layer or one layer. However, instead of carbon, oxygen or nitrogen may be used. However, since these materials easily become insulators, the amount of addition thereof must be controlled more delicately, and they are more difficult to manufacture than carbon.

In the present invention, the nonlinear element is an NIN junction or N(I
)I(1)N junction. However, a diode ring with multiple PIN junctions in parallel or a Ba
The present invention is also effective for other nonlinear semiconductor devices having the characteristics shown in FIG. 3 using the ck-to-back method, Zener characteristics, or avalanche characteristics.

In the present invention, if the nonlinear element is non-photosensitive,
It is possible to provide a semiconductor in close proximity to the rectangular electrode. In addition, when the device is photosensitive and uses the dark state of the device, the electrode is a rectangular transparent conductive film, and a light-shielding metal such as chromium is placed in the same shape as the semiconductor between the electrode and the semiconductor. It is effective to provide this. Of course, even when the nonlinear element has photosensitivity and its characteristics are utilized, the present invention may be applied according to the application.

[Brief explanation of drawings]

FIG. 1 shows a circuit diagram of a liquid crystal display panel of the present invention. FIG. 2 shows a longitudinal cross-sectional view (A) and symbol (B) of the composite diode of the present invention. FIG. 3 shows the operating characteristics of the nonlinear element of the composite diode of the present invention. FIG. 4 shows a plan view and a longitudinal sectional view of the display panel of the present invention.

Claims (1)

[Claims] 1. In a solid-state display device in which a plurality of active elements are provided in a matrix on a substrate, a non-linear element in which a first electrode, a semiconductor, and a second electrode are provided in a stacked manner; a third electrode of the liquid crystal display element connected to the first electrode of the element, the first electrode and the third electrode being provided by one rectangular transparent conductive film; , said second
A semiconductor device characterized in that the electrode is provided parallel to one side of a rectangular electrode and across above the rectangular electrode. 2. The semiconductor device according to claim 1, wherein the second electrode and the lead connected to the electrode have the same width and are provided in a straight line. 3. A semiconductor device according to claim 2, characterized in that a semiconductor remains below the leads.