JPH02157827A - Thin film transistor array device - Google Patents

Thin film transistor array device

Info

Publication number
JPH02157827A
JPH02157827A JP31334188A JP31334188A JPH02157827A JP H02157827 A JPH02157827 A JP H02157827A JP 31334188 A JP31334188 A JP 31334188A JP 31334188 A JP31334188 A JP 31334188A JP H02157827 A JPH02157827 A JP H02157827A
Authority
JP
Japan
Prior art keywords
electrode
picture element
thin film
drain electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31334188A
Inventor
Osamu Sukegawa
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP31334188A priority Critical patent/JPH02157827A/en
Priority claimed from DE1989621567 external-priority patent/DE68921567D1/en
Publication of JPH02157827A publication Critical patent/JPH02157827A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent the short-circuit between a picture element electrode and a source electrode or a drain electrode, and to increase the manufacturing yield of products by connecting the picture element electrode through an aperture part in an inter-layer insulating film to the source electrode or drain electrode.
CONSTITUTION: In a thin film transistor (TR) array device providing plural thin film TRs arranged to an array, and plural picture element electrodes 10, which are mutually connected, a silicon nitriding film 8 as the inter-layer insulating film is provided on a source electrode 7 and a drain electrode 6 of the thin film TR, and the source electrode 7 is connected through an aperture part 9 to the picture element electrode 10. Since the silicon nitriding film 10 exists between the drain electrode 6 and the picture element electrode 10, even when a photo resist defect exists, the interval between the picture element electrode 10 and the drain electrode 6 does not electrically short-circuited. Thus, the yield of the products can be improved.
COPYRIGHT: (C)1990,JPO&Japio
JP31334188A 1988-12-12 1988-12-12 Thin film transistor array device Pending JPH02157827A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31334188A JPH02157827A (en) 1988-12-12 1988-12-12 Thin film transistor array device

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP31334188A JPH02157827A (en) 1988-12-12 1988-12-12 Thin film transistor array device
DE1989621567 DE68921567D1 (en) 1988-11-30 1989-11-29 Liquid crystal display panel with reduced pixel defects.
DE1989621567 DE68921567T2 (en) 1988-11-30 1989-11-29 Liquid crystal display panel with reduced pixel defects.
EP19890312448 EP0372821B1 (en) 1988-11-30 1989-11-29 Liquid crystal display panel with reduced pixel defects
US07/695,260 US5166816A (en) 1988-11-30 1991-05-31 Liquid crystal display panel with reduced pixel defects

Publications (1)

Publication Number Publication Date
JPH02157827A true JPH02157827A (en) 1990-06-18

Family

ID=18040080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31334188A Pending JPH02157827A (en) 1988-12-12 1988-12-12 Thin film transistor array device

Country Status (1)

Country Link
JP (1) JPH02157827A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2011097103A (en) * 2008-09-19 2011-05-12 Semiconductor Energy Lab Co Ltd Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257130A (en) * 1986-04-30 1987-11-09 Sharp Corp Liquid crystal display device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62257130A (en) * 1986-04-30 1987-11-09 Sharp Corp Liquid crystal display device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
JP2011097103A (en) * 2008-09-19 2011-05-12 Semiconductor Energy Lab Co Ltd Semiconductor device
US9343517B2 (en) 2008-09-19 2016-05-17 Semiconductor Energy Laboratory Co., Ltd. Display device
US10032796B2 (en) 2008-09-19 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Display device

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