JPH03148636A - Manufacture of active matrix type liquid crystal display element - Google Patents

Manufacture of active matrix type liquid crystal display element

Info

Publication number
JPH03148636A
JPH03148636A JP28750989A JP28750989A JPH03148636A JP H03148636 A JPH03148636 A JP H03148636A JP 28750989 A JP28750989 A JP 28750989A JP 28750989 A JP28750989 A JP 28750989A JP H03148636 A JPH03148636 A JP H03148636A
Authority
JP
Japan
Prior art keywords
film
electrode
formed
scanning
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28750989A
Inventor
Masushi Honjo
Motohiro Kigoshi
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28750989A priority Critical patent/JPH03148636A/en
Publication of JPH03148636A publication Critical patent/JPH03148636A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To obtain a large aperture rate and increase the transmissivity by providing a transparent conductive film on a substrate, performing back exposure using scanning electrode wires and a semiconductor film as a mask, and then patterning the film and thus forming picture element electrodes.
CONSTITUTION: The glass substrate 30 is provided with scanning electrode lines 36 and gate electrodes 31 which are connected thereto, and they are covered with a gate insulating film 32. Then a protection insulating film 33 is arranged on an Si film 34 and a drain electrode 38 and a source electrode 39 are formed across an Si film 35 with low resistance to form a TFT 40. When a picture element electrode 37 is formed, the scanning electrode lines 36 and Si films are utilized for the back exposure to form picture element electrodes inside measures. Thus, TFTs are formed in matrix nearby the intersections of the scanning lines 36 and signal electrode lines 34. The pattern of an insulating film 41 is formed and covered with an orienting film 42. A light shield film 45, an ITO electrode 46, and an orienting film 47 are provided on an opposite substrate 44 at positions facing the TFTs, the substrates are adhered together across spacers, and liquid crystal is injected to complete the element. In this configuration, the electrodes 37 can be put extremely close to the signal electrode lines and the aperture rate is improved.
COPYRIGHT: (C)1991,JPO&Japio
JP28750989A 1989-11-06 1989-11-06 Manufacture of active matrix type liquid crystal display element Pending JPH03148636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28750989A JPH03148636A (en) 1989-11-06 1989-11-06 Manufacture of active matrix type liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28750989A JPH03148636A (en) 1989-11-06 1989-11-06 Manufacture of active matrix type liquid crystal display element

Publications (1)

Publication Number Publication Date
JPH03148636A true JPH03148636A (en) 1991-06-25

Family

ID=17718262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28750989A Pending JPH03148636A (en) 1989-11-06 1989-11-06 Manufacture of active matrix type liquid crystal display element

Country Status (1)

Country Link
JP (1) JPH03148636A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519297A (en) * 1991-07-15 1993-01-29 Nec Corp Liquid crystal panel, liquid crystal display device and production thereof
US6297867B1 (en) 1997-11-12 2001-10-02 Nec Corporation Wide view angle LCD operable in IPS mode which uses a pixel electrode as a shield to prevent disturbances in the electric field of a display pixel portion of the LCD
US6300992B1 (en) 1997-07-15 2001-10-09 Nec Corporation Liquid crystal display device having characteristic of viewing angle which is right-and-left symmetrical and up-and-down symmetrical
US6384888B2 (en) 1997-07-12 2002-05-07 Lg Electronics Inc. In-plane switching mode liquid crystal display device
US6400435B2 (en) 1998-08-26 2002-06-04 Lg. Philips Lcd Co., Ltd. In-plane switching mode liquid crystal display device capable of shielding against interferences
US6449026B1 (en) 1999-06-25 2002-09-10 Hyundai Display Technology Inc. Fringe field switching liquid crystal display and method for manufacturing the same
US6504581B1 (en) 1998-12-18 2003-01-07 Advanced Display Inc. Liquid crystal display apparatus and manufacturing method thereof
US6552764B2 (en) 1998-07-28 2003-04-22 Sharp Kabushiki Kaisha Reflective LCD whose color filter pattern extends outside display region and whose seal overlaps color filter
WO2003054622A1 (en) * 2001-12-12 2003-07-03 Iljin Diamond Co., Ltd Thin film transistor substrate for liquid crystal display (lcd) and method of manufacturing the same
WO2004036303A1 (en) * 2002-10-14 2004-04-29 Samsung Electronics Co., Ltd. A thin film translator array panel and a method for manufacturing the panel
WO2004044646A1 (en) * 2002-11-14 2004-05-27 Samsung Electronics Co., Ltd. Thin film transistor array panel and method manufacturing thereof
US6850292B1 (en) 1998-12-28 2005-02-01 Seiko Epson Corporation Electric-optic device, method of fabricating the same, and electronic apparatus
US6900871B1 (en) 2000-02-24 2005-05-31 Lg. Philips Lcd Co. Ltd. Thin film transistor substrate of liquid crystal display and method of manufacture
US7417696B2 (en) 2000-05-19 2008-08-26 Lg Display Co., Ltd. Liquid crystal display device and fabricating method thereof

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0519297A (en) * 1991-07-15 1993-01-29 Nec Corp Liquid crystal panel, liquid crystal display device and production thereof
US6741312B2 (en) 1997-07-12 2004-05-25 Lg Electronics Inc. In-plane switching mode liquid crystal display device
US6384888B2 (en) 1997-07-12 2002-05-07 Lg Electronics Inc. In-plane switching mode liquid crystal display device
US6300992B1 (en) 1997-07-15 2001-10-09 Nec Corporation Liquid crystal display device having characteristic of viewing angle which is right-and-left symmetrical and up-and-down symmetrical
US6680768B2 (en) 1997-07-15 2004-01-20 Nec Lcd Technologies, Ltd. Liquid crystal display device having characteristic of viewing angle which is right-and-left symmetrical and up-and-down symmetrical
US6297867B1 (en) 1997-11-12 2001-10-02 Nec Corporation Wide view angle LCD operable in IPS mode which uses a pixel electrode as a shield to prevent disturbances in the electric field of a display pixel portion of the LCD
US6552764B2 (en) 1998-07-28 2003-04-22 Sharp Kabushiki Kaisha Reflective LCD whose color filter pattern extends outside display region and whose seal overlaps color filter
US6400435B2 (en) 1998-08-26 2002-06-04 Lg. Philips Lcd Co., Ltd. In-plane switching mode liquid crystal display device capable of shielding against interferences
US6504581B1 (en) 1998-12-18 2003-01-07 Advanced Display Inc. Liquid crystal display apparatus and manufacturing method thereof
US6850292B1 (en) 1998-12-28 2005-02-01 Seiko Epson Corporation Electric-optic device, method of fabricating the same, and electronic apparatus
US6449026B1 (en) 1999-06-25 2002-09-10 Hyundai Display Technology Inc. Fringe field switching liquid crystal display and method for manufacturing the same
US6900871B1 (en) 2000-02-24 2005-05-31 Lg. Philips Lcd Co. Ltd. Thin film transistor substrate of liquid crystal display and method of manufacture
US7417696B2 (en) 2000-05-19 2008-08-26 Lg Display Co., Ltd. Liquid crystal display device and fabricating method thereof
US6940568B2 (en) 2001-12-12 2005-09-06 Lljin Diamond Co., Ltd. Thin film transistor substrate for liquid crystal display (LCD) and method of manufacturing the same
WO2003054622A1 (en) * 2001-12-12 2003-07-03 Iljin Diamond Co., Ltd Thin film transistor substrate for liquid crystal display (lcd) and method of manufacturing the same
US7605416B2 (en) 2002-10-14 2009-10-20 Samsung Electronics Co., Ltd. Thin film translator array panel and a method for manufacturing the panel
WO2004036303A1 (en) * 2002-10-14 2004-04-29 Samsung Electronics Co., Ltd. A thin film translator array panel and a method for manufacturing the panel
US7582903B2 (en) 2002-11-14 2009-09-01 Samsung Electronics Co., Ltd. Thin film transistor array panel
WO2004044646A1 (en) * 2002-11-14 2004-05-27 Samsung Electronics Co., Ltd. Thin film transistor array panel and method manufacturing thereof

Similar Documents

Publication Publication Date Title
KR100653758B1 (en) Semiconductor device and method of fabricating the same
JP4445077B2 (en) Active matrix type liquid crystal display device
US6031593A (en) Method of manufacturing spacing layer for liquid crystal display using light shielding layer as a mask
TW482918B (en) Liquid crystal device and projection-type display apparatus
KR970007457A (en) Liquid crystal display device and manufacturing method thereof
TW375702B (en) Liquid crystal display device and fabrication method thereof
US7274422B2 (en) Liquid crystal display panel
KR960029834A (en) Liquid crystal display device and manufacturing method thereof
KR101201304B1 (en) Liquid Crystal Display Device and method for fabricating the same
TW459155B (en) Liquid crystal display and its production
JPS6425133A (en) Thin film transistor array type liquid crystal display device
TW460727B (en) Method for forming substrate having light-shielding layer
JPH04295826A (en) Electrooptical device
JPH01156725A (en) Display device
CA2167396A1 (en) Silicon pixel electrode
JPH0372322A (en) Color liquid crystal display device and its manufacture
JPS5528649A (en) Display system for liquid crystal picture
JPH02260661A (en) Thin film transistor for active matrix liquid crystal display
JPS6355529A (en) Active matrix liquid crystal display device and its production
KR20050001707A (en) Thin film transistor array panel and liquid crystal display including the panel
TW512247B (en) Liquid crystal display device, matrix array substrate, and manufacture thereof
TW402734B (en) Method of thin film transistor array substrate manufacture
JPH03232274A (en) Thin film transistor, manufacture thereof, liquid crystal display panel, and liquid display device
JPH0380226A (en) Active matrix substrate for liquid crystal display element and production thereof
JPS60179723A (en) Liquid crystal projection device