JPS6190189A - Semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Application of the Invention The present invention relates to solid-state display devices, image sensors, etc., which solidify display parts of microcomputers, word processors, televisions, etc. by providing a display element, preferably a liquid crystal display panel. Alternatively, the present invention relates to a semiconductor device having nonlinear characteristics that is applied to a liquid crystal printer.

``Prior Art'' For solid-state display panels, a system in which each picture element is controlled independently is effective for large-area displays. As a panel using such an active element, a non-linear element having an NIN junction structure is known, in which amorphous silicon is connected to all pixels in a 1:1 ratio. However, even if this NIN junction is used, since this semiconductor is photosensitive, shielding metals have been placed on the top and bottom surfaces of the device to prevent light from entering the device.

"Problems to be Solved by the Invention" However, when such a photosensitive nonlinear element is used, the shielding layer is made of metal. For this reason, since this metal can be placed between the electrodes that make up the adjacent picture element, the electrical resistance in that area is reduced by light, and minute leaks occur when one side is "ON".
If the other is rOFF J, this will occur based on the potential difference. As a result, the picture elements that should originally maintain the rOFFJ state become thin < rONJ, which is the most disliked phenomenon in so-called liquid crystal display devices, ``crosstalk.''
A phenomenon has occurred.

For this reason, the present invention is characterized in that the non-single crystal semiconductor interposed between elements including active elements is made non-photosensitive.

"Means for Solving the Problem" In order to solve the problem, the present invention aims to reduce the amount of hydrogen or halogen element added in a non-single crystal semiconductor to 1 atomic % or less than the conventionally known 10 to 20 atoms χ. 5i-SixC+-x in which the hydrogen or halogen element in the I-type semiconductor is sufficiently reduced or removed.
(0<X<1)-5i structure or Si-3ixC1-
x(0<X4) −5ixC+−x(0<X<1) −
The main feature is that it has a Si structure or a modified structure thereof.

The nonlinear element used in the present invention has ohmic contact with a pair of electrodes, but is composed of a composite diode that has reverse rectification characteristics.A typical example thereof is an N-type semiconductor-I type ( (hereinafter referred to as "intrinsic" or "substantially intrinsic") semiconductor - NIN provided by stacking N-type semiconductors
In addition to semiconductors that have an NIN structure in which an Nl junction and an IN junction are electrically connected in opposite directions and are integrated as a semiconductor, there are also variations thereof such as NN-N and NP-N.
, PIP, PP-P or PNN tank structure.

The threshold voltage of such a composite diode makes the diode characteristics opposite to each other, and its build-in (rise) voltage (threshold) is determined by the conduction at or near the N-type semiconductor and I-type semiconductor or NI interface of the Nl junction. It can be determined by the concentration of trace impurities such as phosphorus, which determines the type, and impurities and additives, such as carbon, which determine the energy band width. Therefore, by controlling the manufacturing process, it is possible to control the value of the threshold voltage of a desired element, the difficulty of current flow below the threshold value, and the ease of current flow above the threshold value.

Furthermore, the present invention can be completed by simply matching the composite diode with one mask in which the X wiring or Y wiring constituting the matrix has approximately the same shape.
One electrode (first electrode) of the liquid crystal display provided on one substrate side
Only two masks are required to form the composite diode and the X or Y wiring connected to the electrodes). Representative examples of this structure are shown in FIGS. 2 and 4.

For this reason, the AC bias of a solid-state display element, such as a liquid crystal, can be controlled by controlling the level of the other electrode (fourth electrode) and lead of the liquid crystal, and gradation control is also possible. have

"Operation" Furthermore, by dividing the other electrode of the liquid crystal into three parts and passing red (referred to as R), green (referred to as G), and blue (referred to as B) filters corresponding to each electrode or each active element, , voltage can be applied independently to that level as the Y axis. Therefore, it has the feature of being able to perform gradations for R, G, and B.

The present invention will be explained below according to examples.

"Example 1" FIG. 1 shows a circuit diagram using the solid state display device of the present invention.

(daga third electrode). The compound diode is the address line (4) of the X wiring that provides the clock signal,
(5) by a second electrode (22).

On the other hand, the fourth electrode (24) of the liquid crystal (3) is connected to the data lines (6) and (7) of the Y wiring. The Y wiring corresponds to one \-th electrode (23) and is connected to a fourth electrode (24) divided into three. This fourth electrode has R (red), G (green), and B (blue) filters, providing full color.

This X wiring is connected to the same insulating substrate, typically a glass substrate (fourth
(20) in Figures (B), (C), and (D)
) on the other fourth electrode (first electrode) of the liquid crystal (3).
(6-1), (6-2) in Figure 4(C)
, (6-3), i.e., (6) or (24)) is another opposing translucent insulating substrate, typically a glass substrate (Fig.
It is provided on the (20') side in C).

Such picture elements are arranged in a matrix, and in the drawing, 2
2 x 3 (R, G, B). This is a scaled and amplified display device, for example (640 pixels x 3 (
R, G, B)X 200) also have the same technical idea.

Examples of nonlinear elements using such composite diodes and their characteristics are shown in FIGS. 2 and 3.

This FIG. 2 will be abbreviated below.

FIG. 2(A) shows a longitudinal cross-sectional view of an actual device structure.

In FIG. 2 (8), non-alkali glass (20) was used as the light-transmitting insulating substrate. On this upper surface, a conductive film of ITO or tin oxide was formed to a thickness of 0.1 to 0.5 μm by sputtering or electron beam evaporation. Thereafter, this conductive film was patterned using a first mask (2) to remove unnecessary portions and form electrodes.

After this, NI is applied to the entire surface by plasma vapor phase reaction method.
A composite diode made of a non-single crystal semiconductor in which hydrogen or halogen elements having an N structure are reduced or removed was formed. That is, the N-type semiconductor (12) and the silane are 13.5
By performing high frequency glow discharge of 6M1 (z, 30
A non-single crystal semiconductor having an amorphous structure is formed on a surface to be formed on a substrate maintained at 0 to 400°C. Its electrical conductivity is between 10-5 and 10-3 (0 cm) and 5
The thickness ranged from 0 to 500 people. Furthermore, 10-b~1
Vacuuming was carried out sufficiently to 0-' Lorr.

Furthermore, silane (SimHzs-z e.g. 5i with m=1
Ht) to methylsilane (SiHn(CHs) n-i n
=1 to 3) were mixed. That is, for n = 2, )l
zsi (CH3) z/5iHa =1/10~1/
A very thin block layer (barrier layer) was prepared by setting 200 to 1 to prevent the backflow of this phosphorous impurity to IJlg. Furthermore, only the silane is subjected to a plasma reaction, and a non-single crystal semiconductor (13) containing little or very little hydrogen or halogen elements is deposited on the N-type semiconductor to a thickness of 500 to 1μ, for example, 0.2μ. Alternatively, it was formed by laminating it on a barrier layer. Furthermore, 10-6 to 10-'torr
I vacuumed it up enough.

Again, a similar barrier layer or N-type semiconductor (14) is laminated as an amorphous structure to a thickness of 50 to 500 nm.
An IN junction or an N(1)I(I)N junction ((I) is a barrier layer, but will be omitted below for simplicity).

After this, SnO□ or I as a CTF is applied to this upper surface.
TO to a thickness of 500 to 1500 mm, and chromium or aluminum (500 to 150 mm thick) for leads and electrodes.
500 people) were laminated by electron beam evaporation or sputtering. Further, an electrode (22), a composite diode (2
), and other parts were removed by photo-etching using a second photomask (2) to form a second electrode.

That is, in FIG. 2 (^), a first electrode (21) made of a transparent conductive film (17) on a glass substrate (20),
N(12) I(13) N(14) NIN junction type composite diode (2) made of semiconductor stacked body, CT
F (15), chrome or aluminum (16)
The second electrode (22) is made of: This NI
The symbol for the N structure is shown in FIG. 2(B).

As a result, a nonlinear characteristic (31) as shown in FIG. 3 is obtained.

(32') can be provided corresponding to FIG.

Furthermore, when carbon is added to the interface between the N layer and the first layer or in the vicinity thereof, the threshold value at +Va becomes higher than the 1 to 2 V of a simple PIN type diode characteristic, for example, IO
It can be made more than V. In addition, the carbon in this one layer is 5ixC+
Since -x and silicon are sufficiently bonded, it is possible to prevent silicon from being mixed into the N layer at the IN interface (32) and to have symmetry with respect to the origin in the V-■ characteristic.

Furthermore, this material was irradiated with 5700Lx white light.

However, this characteristic shifted only very slightly (31") and (32°), respectively. The photogenicity was slight or negligible, that is, it could be made substantially non-photosensitive, and furthermore, when forming the substrate, Increasing the concentration of hydrogen further eliminates hydrogen, resulting in non-photosensitive junction diode characteristics.

"Example 2" This example is shown in FIG. 4, which shows a plan view (A) and a longitudinal sectional view (B) of the area (1) surrounded by the broken line in FIG.

(C) and (D) are shown.

Furthermore, Fig. 4 (B), (C), and (D) are (A
), respectively AA', BB', C-
A longitudinal cross-sectional view at C' is shown. In addition, FIG. 4(C) also shows the liquid crystal (3) and the upper electrodes (6), (7), while the others (A), (B), (D) have nonlinear elements. Only the side is shown for simplicity.

The manufacturing method of this element is the same as in Example 1.

That is, the first electrode (21) and the third electrode (23) are formed using the first mask (2). Furthermore, N (1
2) Configure I (13) N (14) according to Example 1. Furthermore, upper electrodes (15) and (16) are formed. Next, lead (4) using the second photomask ■.
(5) Chromium or aluminum was plasma etched using the second electrode 1 (22) using CCI. Further, SnO□ (15) and semiconductor (2) were removed by etching.

Thus, by using the second mask (2) that performs one overlapping process, the leads (4) in the X direction are formed into approximately the same shape.
(5) A second electrode (22), a semiconductor (2), and a composite diode could be formed. In addition, since this composite diode is non-photosensitive, it does not require an extra masking process using chromium or the like for light shielding.

Furthermore, as is clear from FIG. 4(B), the first electrode (21) of one element and the first electrode (20μ) of the adjacent element were included. Therefore, this crosstalk between the electrodes could be prevented whether the display element was irradiated with light in a transmissive or reflective manner.

Furthermore, the other fourth electrode (24) of the opposing liquid crystal.

Leads (6) were formed as wiring in the Y direction using another first mask (2).

After this, for each of the wiring in the Y direction, a red filter is applied to the electrodes (6-1) and (7-1) by a known electrodeposition method, and a red filter is applied to the electrodes (6-2) and (7-2). A green filter was formed for (6-3) and (7-3), and a blue filter was formed for (6-3) and (7-3). Then polyimide such as PIQ
was coated to form a protective film, and the PIQ was subjected to an orientation treatment.

For this full coloring, a dyeing method may be used instead of the electrodeposition method. This method first forms R, G, and B filters on a glass substrate, then creates a pansivation film.
In this film (6-1), (6-2), (6-3)
, (7-1) ... were divided into three to form electrodes.

In this way, three electrodes could be provided corresponding to one lower electrode.

From the above, it is only necessary to use three types of masks to form one active picture element on this surface, and particularly in that case, it has the advantage that only two overlapping masks (one time) are required.

Furthermore, add another opposing insulating substrate (20″) to approximately 6 to 10
After evacuating the gap by a width of μ, a known liquid crystal (10) was sealed.

As a display panel, the peripheral circuit (8) shown in FIG.
) and (9) were arranged on a printed circuit board, and the leads of this printed circuit board were connected to the leads of the display element in correspondence with each other.

In this way, it has become possible to pattern an active element type panel using only three masks.

"Effects" As described above, the present invention provides a non-photosensitive, symmetrical composite diode with V-1 characteristics by reducing or removing the amount of hydrogen or halogen in one layer. It is something that Furthermore, since this non-single-crystal semiconductor is provided across adjacent elements, by making this semiconductor non-photosensitive, crosstalk between adjacent elements can be eliminated. It was extremely effective together with the display device.

In addition, N1. By doping a larger amount of carbon at or near the IN junction interface than inside to form a barrier layer, an insulating film or a wide Eg layer is applied, flattening the current at a voltage below the threshold value, and It is possible to perform process control for characteristics that make the current steeper at a voltage higher than that.

Furthermore, since the diode and electrode lead are integrated, patterning can be performed with an extremely small number of masks (three) (overlapping once), and manufacturing yield can be improved. , is an AC drive system, and has the feature that it is easy to control gradations, especially since the threshold value of the diode can be controlled by the process conditions during stacking of semiconductor layers using a vapor phase reaction method.

In the present invention, carbon was added within one layer. However, instead of carbon, oxygen or nitrogen may be used.

However, since these materials easily become insulators, the amount of addition thereof must be controlled more delicately, and they are more difficult to manufacture than carbon.

In the present invention, the composite diode is heated at 200 to 250°C.
After patterning this diode on the substrate, it is thermally annealed at 300 to 450°C to release hydrogen or halogen elements,
It may be non-photosensitive.

[Brief explanation of the drawing]

FIG. 1 shows a circuit diagram of a liquid crystal display panel of the present invention. FIG. 2 is a vertical cross-sectional view (A) of the composite diode of the present invention. (B) is shown. FIG. 3 shows the operating principle of the nonlinear element of the composite diode of the present invention. FIG. 4 shows a plan view and a longitudinal sectional view of the display panel of the present invention.

Claims (1)

[Claims] 1. A nonlinear element comprising a pair of semiconductors having reverse rectification characteristics and exhibiting ohmic contact with a first electrode and a second electrode, wherein the semiconductor has a first non-linear element having one conductivity type. a single crystal semiconductor, a second non-single crystal semiconductor having intrinsic or substantially intrinsic non-photosensitivity or substantially non-photosensitivity on the semiconductor, and the first non-single crystal semiconductor on the semiconductor; A semiconductor device comprising a third semiconductor having the same conductivity type. 2. A semiconductor device according to claim 1, wherein the second semiconductor has an amorphous structure containing silicon as a main component. 3. In claim 1, the first semiconductor is made of a semiconductor mainly composed of silicon having an amorphous structure and having non-photosensitivity doped with phosphorus or boron,
A semiconductor device characterized in that the semiconductor device has a thickness of 500 Å or less. 4. A semiconductor device according to claim 1, characterized in that a barrier layer is provided at or near the interface between the first and second semiconductors, or at or near the interface between the second and third semiconductors. .