JPS618916A - ド−プ領域の形成方法 - Google Patents

ド−プ領域の形成方法

Info

Publication number
JPS618916A
JPS618916A JP6402285A JP6402285A JPS618916A JP S618916 A JPS618916 A JP S618916A JP 6402285 A JP6402285 A JP 6402285A JP 6402285 A JP6402285 A JP 6402285A JP S618916 A JPS618916 A JP S618916A
Authority
JP
Japan
Prior art keywords
substrate
layer
metal
dopant
dopants
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6402285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0311089B2 (enExample
Inventor
ゲイリー・ウエイン・ラブロフ
マーク・フランシス・ウイツトマー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS618916A publication Critical patent/JPS618916A/ja
Publication of JPH0311089B2 publication Critical patent/JPH0311089B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP6402285A 1984-06-21 1985-03-29 ド−プ領域の形成方法 Granted JPS618916A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62294984A 1984-06-21 1984-06-21
US622949 1984-06-21

Publications (2)

Publication Number Publication Date
JPS618916A true JPS618916A (ja) 1986-01-16
JPH0311089B2 JPH0311089B2 (enExample) 1991-02-15

Family

ID=24496165

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6402285A Granted JPS618916A (ja) 1984-06-21 1985-03-29 ド−プ領域の形成方法

Country Status (2)

Country Link
EP (1) EP0165547A3 (enExample)
JP (1) JPS618916A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422026A (en) * 1987-07-17 1989-01-25 Sony Corp Manufacture of semiconductor device
JPH01220824A (ja) * 1988-02-29 1989-09-04 Toshiba Corp 半導体装置の製造方法
JPH0235720A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置の製造方法
JP2005123626A (ja) * 2003-10-17 2005-05-12 Interuniv Micro Electronica Centrum Vzw 半導体の接続領域の接触抵抗を低減する方法
JP2012124483A (ja) * 2010-12-06 2012-06-28 Imec ｎ型ゲルマニウム上への低抵抗コンタクトの作製方法
JP2016026409A (ja) * 2009-04-21 2016-02-12 テトラサン インコーポレイテッド 高効率太陽電池構造体および製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0291932A (ja) * 1988-09-28 1990-03-30 Fujitsu Ltd 半導体装置の製造方法
US4925812A (en) * 1989-09-21 1990-05-15 International Rectifier Corporation Platinum diffusion process
US5453389A (en) * 1993-08-27 1995-09-26 National Semiconductor, Inc. Defect-free bipolar process
US5571744A (en) * 1993-08-27 1996-11-05 National Semiconductor Corporation Defect free CMOS process

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3869322A (en) * 1973-10-15 1975-03-04 Ibm Automatic P-N junction formation during growth of a heterojunction
EP0101737A4 (en) * 1982-02-26 1984-08-20 Western Electric Co DIFFUSION OF LOW REGIONS.
CA1198226A (en) * 1982-06-01 1985-12-17 Eliezer Kinsbron Method for manufacturing a semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6422026A (en) * 1987-07-17 1989-01-25 Sony Corp Manufacture of semiconductor device
JPH01220824A (ja) * 1988-02-29 1989-09-04 Toshiba Corp 半導体装置の製造方法
JPH0235720A (ja) * 1988-07-26 1990-02-06 Matsushita Electric Ind Co Ltd Ｍｏｓ型半導体装置の製造方法
JP2005123626A (ja) * 2003-10-17 2005-05-12 Interuniv Micro Electronica Centrum Vzw 半導体の接続領域の接触抵抗を低減する方法
JP2016026409A (ja) * 2009-04-21 2016-02-12 テトラサン インコーポレイテッド 高効率太陽電池構造体および製造方法
JP2012124483A (ja) * 2010-12-06 2012-06-28 Imec ｎ型ゲルマニウム上への低抵抗コンタクトの作製方法

Also Published As

Publication number Publication date
EP0165547A2 (en) 1985-12-27
EP0165547A3 (en) 1987-08-26
JPH0311089B2 (enExample) 1991-02-15

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