JPS6188511A - Manufacture of magnetic thin film - Google Patents

Abstract

PURPOSE:To form a magnetic thin film on a substrate under the optimum condition by arranging a target within plasma arc magnetic field, ionizing neutral particles sputtered from the target and applying the leadout electric field thereto. CONSTITUTION:A magnetic material alloy (Ni-Fe) 10 is housed in a chamber 11 to cause the glow discharge to generate between an anode 13 and a filament 14 and a target 10 is arranged within plasma arc 12. A magnet 15 is placed in the external circumference, the plasma arc 12 is closed, the acceleration electrodes 18a...18d providing small holes 17a...17d which have the intervals gradually becoming large and are communicating with a hole 16 are arranged near said very small hole 16 of chamber in order to form a leadout electric field. A magnet 19 forms the deflection field and a magnetic resistance thin film 21 is formed to a substrate 20 fixed to a holder 22. According to this structure, even in case magnetic anisotropy is different due to material, shape and thickness of thin film, a magnetic thin film can be obtained under the optimum condition by adjusting the leadout electric field and deflection magnetic field.

Description

DETAILED DESCRIPTION OF THE INVENTION Industrial Application The present invention is a method of forming a magnetic material necessary for manufacturing electronic devices, etc., and is particularly a method of forming a magnetic material using a sputtering method.

BACKGROUND OF THE INVENTION For example, in order to fabricate an MR thin film that performs magnetic reproduction by applying the magnetoresistance effect, the nuparitaring method has conventionally been used to cause spattering in a forced magnetic field. That is, as shown in FIG. 3, in a vacuum atmosphere into which sputtering gases such as A and R are introduced, a high frequency is applied to the target 1, which is a cathode, through a mariching circuit 2, and the target 1 is placed facing the target 1. A substrate 4 is fixed to the anode 3, and a magnetic field 67 is applied by a diagonal magnet 7) 5.5 placed near the substrate 4 to cause spackling. This C
While applying the magnetic field 6, the substrate 42: Kogo・XR
By forming 19 of the thin 1 kan 7, it is possible to set the magnetic axis using the anti-magnetic anisotropy. ,IR・! 7. i
Good 7 saturation t1+ r: The biflux density Bm is large and the coercive force H
? This is because it is small in size and provides a good magnetic arrow resistance effect.

In addition, as a method of gluing other than the above, the shape b' due to this is separated by +11, and as shown in Figure 4. There was also a method of diagonally attaching the substrate 9 to a stationary W-shaped source 8 while passing the substrate 9 thereon. This method is disclosed in Japanese Patent Application Laid-open No. 59-6072.
As introduced in Publication No. 5, there is a track record that tens of a eLjDj (α) can be observed as an anisotropic magnetic field.Although its formation factor has not been fully elucidated, the deposition incident)J', It is thought that this is because when the crystal grains are small, the self-shading effect causes the crystal grains to elongate in the vertical direction on the incident plane, and as the incident angle increases, they grow along the incident direction.

Problems to be Solved by the Invention The above-mentioned conventional technology has the following problems. First, regarding the strong control ``suba and evening in the magnetic field (d,
Since the magnetic field 6 is equally applied to the substrate 7, the easy axis of magnetization can be set well, but on the other hand, the anisotropic magnetic field becomes small. Next, the method of oblique evaporation is disclosed in Japanese Patent Application Laid-Open No. 59-60725.
Although it has the above-mentioned features described in the publication, it was difficult to control the anisotropic magnetic field and the easy axis direction of magnetization.

This invention was proposed for the purpose of solving these problems.

As a result of studying and considering the above-mentioned problems of the prior art, the present invention provides the following innovations to the technology for increasing the G2 formation by sputtering to [1]. That is,
This invention applies plasma arc magnetism, places a target nod in the plasma arc, and ionizes the primary particles sputter-linked from the target.
Furthermore, the method involves applying an extraction electric field to adhere the thin film to the substrate.

Therefore, according to the present invention, it is possible to confine a plasma arc by applying a magnetic field, and since a target is provided in the plasma arc, ions can be ejected efficiently by sputter link. Then, the ions can be pulled out while accelerating the ions using a high electric field, and the adhesion angle can be controlled by a magnetic field directed toward Ia. Therefore, the present invention provides a magnetic thin film in an optimal state by adjusting the extraction electric field and the 'rliif direction magnetic field even if the magnetoelectric anisotropy is different depending on the thin film material 2, shape, thickness, etc. It is possible to produce.

Embodiment FIG. 1 is a conceptual diagram of a film forming apparatus for explaining an embodiment of the present invention. First, reference numeral 10 denotes a target that becomes the MR thin film material for magnetoresistive seedling type thin film magnetism, and is, for example, an outer alloy of N180-N18O-Fe20, and is housed in a chamber 11.This chamber In order to generate the plasma arc 12, the anno-F 18 fibment 11 is provided with an opposing fiber 14 (~), and between the two there is a voltage of several kilograms capable of generating a claw discharge.
A low pressure of about V is applied. Therefore, the target l
O is fixed so as to be located within the plasma arc 12. The atmosphere is set to a summer sky level of about 10-2 to 10-4 TOrr. 15 is a mask located around the outer periphery of the chamber 11 and used to apply a silent field that keeps the plasma arc 12 closed. Near the through hole 16, small holes 17a and 17b are formed at gradually different intervals and become more obscene than the through hole 16.
, 17C are provided, respectively, and 18tl, 18b, and 18C are accelerating electric pulps that form an extraction electric field. Furthermore, 19 is a magnet for forming a deflection magnetic field. And 20 is MR
JI (a plate that is fixedly attached to the holder 22) to make a thin copy 21.

By using the above-mentioned apparatus, the target 10 is sputter-linked in this embodiment: during the process, the emitted Ni-Fe neutral particles are transferred to the plasma arc 12.
While being ionized inside, the accelerating electric kettles 18・Z, 18b
, 18? The magnetide 19 is deposited onto the substrate 20 while its deposition direction is controlled in the magnetic field space in which the magnetide 19 is placed. Therefore, in the method of manufacturing the MR thin layer 11 using this film forming apparatus, the accelerating electrodes 18a, 18b, 18c and magnets, the extraction by the It is possible to have both the effects of evaporation in a forced magnetic field and: In addition, the easy axis of magnetization can be set using the deflection magnetic field, similar to oblique evaporation, and the anisotropic 1i magnetic field, easy magnetization, and 1q11 direction crotch can be wedged and clearly set. Since it adheres, the anisotropic magnetic field can also be increased.

Incidentally, the present invention is not limited to the above-mentioned embodiments. For example, as shown in FIG.
Anode 22' to which is fixed, an electric wire 18' for forming a sulfur field and a magnet 7) 19' for forming a deflection magnetic field are connected between the anode 22' and the anode 22'.
This also includes the case where sputtering deposition is performed while providing a high-frequency discharge and forming plasma 12'.

Effects of the Invention According to the present invention, the advantages of both the conventional forced magnetic field deposition and oblique deposition, that is, the easy axis of magnetization, the direction setting of the anisotropy JS, and the magnitude of the anisotropic magnetic field can be made sufficient. Of course, by controlling the extraction electric field and the deflection magnetic field, it is possible to obtain the optimal magnetic thin film depending on the material, shape, thickness, etc. of the thin film, and to form multilayer magnetic films. It has the advantage of being able to form different thin films.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram of a film forming apparatus for explaining one embodiment of the present invention, FIG. 2 is a conceptual diagram of another embodiment, and FIG. 3 is a conceptual diagram for explaining conventional forced magnetic field sputtering deposition. FIG. 4 is a conceptual diagram illustrating conventional oblique evaporation. 10・・・・・・・・・・・・・・・・・・Target, 12.12'・・・・・・Plasma arc, 15・・・・・・・・・・・・・・・・・・・・・
・Magne, G, 18 a, 18 b, 18 C, 1
8'-- Acceleration (extraction) electrode, 19.19'...
......Magne...throat, 20...
・・・・・・・・・・・・ Board, 21・・・・・・
・・・・・・・・・・・・ Magnetic island membrane. Figure 2 Figure 3 Figure 4

Claims (2)

[Claims] (1) A magnetic field is applied to the plasma arc, a target is placed in the plasma arc, neutral particles sputtered from the target are ionized, and an extraction electric field is applied to deposit a thin film on the substrate. A method for producing magnetic thin films. (2) A method for manufacturing a magnetic thin film according to claim 1, characterized in that the target material is an MR element material made of a Ni-Fe alloy.