JPS6185824A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6185824A JPS6185824A JP59208612A JP20861284A JPS6185824A JP S6185824 A JPS6185824 A JP S6185824A JP 59208612 A JP59208612 A JP 59208612A JP 20861284 A JP20861284 A JP 20861284A JP S6185824 A JPS6185824 A JP S6185824A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- ultraviolet rays
- pattern
- far ultraviolet
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 230000018109 developmental process Effects 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関しｌに大きな段差を
有する半導体基板に微細パターンを形成する半導体装置
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a semiconductor device in which a fine pattern is formed on a semiconductor substrate having a large step.
通常のホトエツチング技術では、マスク上のパターンを
フォトレジスト層に転写するとき３５’ＯＯ〜４５００
人の紫外光を照射しているが、この場合の転写パターン
の解像度は使用する波長によシ決るため、工μｍ以下の
ようにより微細パターンとなると紫外光では転写が不可
能となる。最近では、より微細パターンの転写を行う丸
めに、よシ波長の短い１６００〜２６００人の遠紫外光
を用いる検討がなされ実用化が進んでいる。With normal photoetching technology, when the pattern on the mask is transferred to the photoresist layer, the etching time is 35'OO~4500.
Although human ultraviolet light is irradiated, the resolution of the transferred pattern in this case depends on the wavelength used, so it is impossible to transfer finer patterns, such as micrometers or less, with ultraviolet light. Recently, studies have been conducted to use deep ultraviolet light with a shorter wavelength of 1,600 to 2,600 people for rounding to transfer finer patterns, and practical use is progressing.
上述した遠紫外光を用いてのパターンの転写は実用化が
進んだとは云え大きな段差を有する半導体基板上に遠紫
外ａｔ用いて１μｍ以下の微細パターンを形成しようと
すると、第３図に示すように、段差の下部の段差付近で
はフォトレジスト２が厚くなることと、段差の下部では
フォトマスク４とフォトレジスト２０間にすき間が出来
、第４図に示すように所要のパターンを正確に形成する
ことができない。なお両図においてｌは段差を有する半
導体基板である。Although the practical application of pattern transfer using deep ultraviolet light as described above has progressed, when attempting to form a fine pattern of 1 μm or less using deep ultraviolet light on a semiconductor substrate with large steps, the pattern shown in Fig. 3 As shown in FIG. 4, the photoresist 2 becomes thick near the step at the bottom of the step, and a gap is created between the photomask 4 and the photoresist 20 at the bottom of the step, making it possible to accurately form the required pattern as shown in FIG. Can not do it. Note that in both figures, l represents a semiconductor substrate having a step.
フォトレジストの膜厚を充分に厚くすれば、半導体基板
表面の段差をカバーし、フォトレジストの表面を平坦化
することは可能であるが、厚いフすトレジス）ｌ使用し
た場合は、露光量、現像時間を共に大幅に増さなければ
ならず、密着性を初めとするマスクの条件変動が大きく
影響し微細パターンの形成は困難となる。If the film thickness of the photoresist is made sufficiently thick, it is possible to cover the steps on the surface of the semiconductor substrate and flatten the surface of the photoresist, but if a thick film resist is used, the exposure amount, Both require a significant increase in development time, and variations in mask conditions, including adhesion, have a large effect, making it difficult to form fine patterns.
本発明は上記問題点を解決し、大きな段差を有する半導
体基板に対して遠紫外線露光を用い、１μｍ以下の微細
パターンを形成する半導体装置の製造方法を提供するこ
とを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a method for manufacturing a semiconductor device in which a fine pattern of 1 μm or less is formed using deep ultraviolet exposure on a semiconductor substrate having large steps.
本発明の半導体装置の製造方法は、半導体基板表面に遠
紫外線に感光するフォトレジス）１塗布する工程と、該
フォトレジスト上に遠紫外線に感光しないフォトレジス
トｔｍ布する工程と、前記２層フォトレジスト上に遠紫
外線に感光するフォトレジス）１塗布する工程とを含ん
で構成される３層フォトレジスト金使用し微細パターン
金形成することを特徴として構成される。The method for manufacturing a semiconductor device of the present invention includes a step of coating a photoresist (TM) sensitive to deep ultraviolet rays on the surface of a semiconductor substrate, a step of disposing a photoresist (tm) that is not sensitive to deep ultraviolet rays on the photoresist, and a step of coating the photoresist TM which is not sensitive to deep ultraviolet rays on the surface of a semiconductor substrate. The method is characterized by forming a fine pattern of gold using a three-layer photoresist consisting of a step of coating a photoresist sensitive to deep ultraviolet rays on a resist.
以下、本発明の実施例について、図面を参照して説明す
る。第１図は本発明の一実施例全説明するための３層フ
ォトレジストの断面図であり、第２図１ａｌ〜ｔａは本
発明の一実施例を説明するためのパターン形成工程を示
す断面図である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a three-layer photoresist for explaining an embodiment of the present invention, and FIG. 2 1al to ta are cross-sectional views showing a pattern forming process for explaining an embodiment of the present invention. It is.
第１図に示すとおり、段差を有する半導体基板１上にＰ
ＭＭＡ （ポリメチルメタアクリレート）の様な遠紫外
線に感光するフォトレジス）２ｔ−塗布する。この際、
フォトレジスト２の粘度及び塗布回転数を選択し、フォ
トレジスト２の表面が平坦化されるようＫする。次に上
層のフォトレジスト３を塗布する際にフォトレジストが
混合しない様に、ベークした後、遠紫外線に感光しない
フォトレジスト３を塗布する。このフォトレジスト３の
塗布膜厚は遠紫外を透過しないだけあればよい（例えば
シブレイ社製のＡＺ−１３５０では２０００λ以上でよ
い）。次に、ベークした後、遠紫外線に感光するフォト
レジスト１２１に塗布しベークする。As shown in FIG. 1, P is placed on a semiconductor substrate 1 having a step.
Apply a deep ultraviolet-sensitive photoresist such as MMA (polymethyl methacrylate) 2t. On this occasion,
The viscosity and coating rotation speed of the photoresist 2 are selected, and K is applied so that the surface of the photoresist 2 is flattened. Next, in order to prevent the photoresists from being mixed when applying the upper layer photoresist 3, after baking, a photoresist 3 that is not sensitive to deep ultraviolet rays is applied. The coating thickness of the photoresist 3 is sufficient as long as it does not transmit deep ultraviolet light (for example, AZ-1350 manufactured by Sibley Co., Ltd. may have a thickness of 2000λ or more). Next, after baking, the photoresist 121 sensitive to deep ultraviolet rays is coated and baked.
この最上層フォトレジスト１２の膜厚は工程上の必要に
より自由に選択できるが、微細パターンを形成する場合
は薄い方がよい。次に、フォトレジストマスク４を用い
て最上層フォトレジスト１２をパターン形成するに必要
な条件で露光する。The film thickness of the top layer photoresist 12 can be freely selected depending on process requirements, but when forming a fine pattern, the thinner the film, the better. Next, using the photoresist mask 4, the uppermost photoresist 12 is exposed to light under conditions necessary to form a pattern.
この際フォトレジスト２の表面が平坦化されているため
、フォトレジスト１２の表面も平坦になっており、フォ
トマスク４との間にすき間なく密着出来、かつ、フォト
レジスト１２の膜厚は均一で充分に薄いため、最適の条
件で露光、現像が出来、１μｍ以下のパターンも容易に
形成できる。At this time, since the surface of the photoresist 2 is flattened, the surface of the photoresist 12 is also flattened, so that it can be closely attached to the photomask 4 without any gaps, and the film thickness of the photoresist 12 is uniform. Because it is sufficiently thin, it can be exposed and developed under optimal conditions, and patterns of 1 μm or less can be easily formed.
次に、第２図１１１に示すように、フォトレジスト１２
の現像を行いパターンを形成する。Next, as shown in FIG. 2 111, the photoresist 12
is developed to form a pattern.
次に、第２図１１１に示すように、フォトレジスト１２
に形成されたパターン金マスクにして、通常の紫外線を
全面露光した後、フォトレジスト３を現像し、パターン
を形成する。Next, as shown in FIG. 2 111, the photoresist 12
After exposing the entire surface to normal ultraviolet rays using a patterned gold mask, the photoresist 3 is developed to form a pattern.
最後に、第２図１１１に示すように、フォトレジスト３
に形成されたパターンをマスクにして、遠紫外線を全面
露光した後、フォトレジスト２を現像し、パターンを形
成する。この際最上層フォトレジスト１２は現像除去さ
れるが、何ら支障はない。Finally, as shown in FIG. 2 111, the photoresist 3
Using the pattern formed in 1 as a mask, the entire surface is exposed to deep ultraviolet rays, and then the photoresist 2 is developed to form a pattern. At this time, the top layer photoresist 12 is removed by development, but there is no problem.
またフォトレジスト２の膜厚は非常に厚くなるにもかか
わらずマスクがフォトレジストに密着しているので露光
時のまわり込みがすくなく現像にあたっては露光部分以
外は他のフォトレジストに覆われていることなどから露
光、現像が充分に行なえることから、パターン形成は容
易である。In addition, even though the film thickness of photoresist 2 is very thick, the mask is in close contact with the photoresist, so there is little wrap-around during exposure, and during development, the exposed area is covered with other photoresist. Pattern formation is easy because exposure and development can be carried out sufficiently.
さらに、フォトレジスト２の現像の際に、現像を過度に
行い、フォトレジスト３のパターンより広がったパター
ンを形成することが出来るという利点を有する。Furthermore, when developing the photoresist 2, it has the advantage that it is possible to perform excessive development and form a pattern that is wider than the pattern of the photoresist 3.
〔発明の効果〕
以上説明したように、本発明によれば、大きな段差を有
する半導体基板表面に１μｍ以下の微細パターンを容易
に形成することができる。[Effects of the Invention] As described above, according to the present invention, a fine pattern of 1 μm or less can be easily formed on the surface of a semiconductor substrate having a large step.
第１図は本発明の一実施例全説明するための３層フォト
レジストの断面図、第２図１ａｌ〜＋Ｃ１は本発明の一
実施例を説明するためのパターン形成工程を示す断面図
、第３図は従来方法のフｒ）レジスト露光を説明するた
めの断面図、第４図は従来方法により形成されたパター
ンの一例の平面図である。
１・・・・・・段差を有する半導体基板、 ２．１２
・・・・・・遠紫外線に感光するフォトレジスト、３・
・・・・・遠紫外線に感光しないフォトレジスト、４・
・・・・・フォトマスク。
代理人 弁理士 内 原 晋、 ；、、−１，ｌ
ゞ・卒１０FIG. 1 is a sectional view of a three-layer photoresist for explaining an embodiment of the present invention, FIG. FIG. 3 is a sectional view for explaining resist exposure using the conventional method, and FIG. 4 is a plan view of an example of a pattern formed by the conventional method. 1... Semiconductor substrate having a step, 2.12
...Photoresist sensitive to far ultraviolet rays, 3.
...Photoresist that is not sensitive to deep ultraviolet rays, 4.
...Photomask. Agent: Susumu Uchihara, patent attorney ;,, -1,l
ゞ・Graduation 10
Claims (1)
を塗布する工程と、該フォトレジスト上に遠紫外線に感
光しないフォトレジストを塗布する工程と、前記２層フ
ォトレジスト上に遠紫外線に感光するフォトレジストを
塗布する工程とを含んで構成される３層フォトレジスト
を使用し微細パターンを形成することを特徴とする半導
体装置の製造方法。A step of applying a photoresist sensitive to far ultraviolet rays on the surface of the semiconductor substrate, a step of applying a photoresist not sensitive to far ultraviolet rays on the photoresist, and a step of applying a photoresist sensitive to far ultraviolet rays on the two-layer photoresist. 1. A method for manufacturing a semiconductor device, comprising forming a fine pattern using a three-layer photoresist including a step of coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59208612A JPS6185824A (en) | 1984-10-04 | 1984-10-04 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59208612A JPS6185824A (en) | 1984-10-04 | 1984-10-04 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6185824A true JPS6185824A (en) | 1986-05-01 |
Family
ID=16559096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59208612A Pending JPS6185824A (en) | 1984-10-04 | 1984-10-04 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6185824A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0433325A (en) * | 1990-05-28 | 1992-02-04 | Samsung Electron Co Ltd | Photo etching for forming fine pattern |
-
1984
- 1984-10-04 JP JP59208612A patent/JPS6185824A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0433325A (en) * | 1990-05-28 | 1992-02-04 | Samsung Electron Co Ltd | Photo etching for forming fine pattern |
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