JPS6184018A - X線露光装置 - Google Patents

X線露光装置

Info

Publication number
JPS6184018A
JPS6184018A JP59204160A JP20416084A JPS6184018A JP S6184018 A JPS6184018 A JP S6184018A JP 59204160 A JP59204160 A JP 59204160A JP 20416084 A JP20416084 A JP 20416084A JP S6184018 A JPS6184018 A JP S6184018A
Authority
JP
Japan
Prior art keywords
mask
wafer
ray exposure
pattern
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59204160A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564452B2 (show.php
Inventor
Yoshihiro Yoneyama
米山 義弘
Yukio Kenbo
行雄 見坊
Akira Inagaki
晃 稲垣
Minoru Ikeda
稔 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59204160A priority Critical patent/JPS6184018A/ja
Publication of JPS6184018A publication Critical patent/JPS6184018A/ja
Publication of JPH0564452B2 publication Critical patent/JPH0564452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P95/00

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59204160A 1984-10-01 1984-10-01 X線露光装置 Granted JPS6184018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59204160A JPS6184018A (ja) 1984-10-01 1984-10-01 X線露光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59204160A JPS6184018A (ja) 1984-10-01 1984-10-01 X線露光装置

Publications (2)

Publication Number Publication Date
JPS6184018A true JPS6184018A (ja) 1986-04-28
JPH0564452B2 JPH0564452B2 (show.php) 1993-09-14

Family

ID=16485826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59204160A Granted JPS6184018A (ja) 1984-10-01 1984-10-01 X線露光装置

Country Status (1)

Country Link
JP (1) JPS6184018A (show.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443932A (en) * 1988-09-30 1995-08-22 Canon Kabushiki Kaisha Exposure method
JP2011102834A (ja) * 2009-11-10 2011-05-26 Toppan Printing Co Ltd 基板露光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219735A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd ステップアンドリピート方式のプロキシミティ露光装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58219735A (ja) * 1982-06-16 1983-12-21 Hitachi Ltd ステップアンドリピート方式のプロキシミティ露光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443932A (en) * 1988-09-30 1995-08-22 Canon Kabushiki Kaisha Exposure method
EP0361934B1 (en) * 1988-09-30 1998-11-25 Canon Kabushiki Kaisha Exposure method
JP2011102834A (ja) * 2009-11-10 2011-05-26 Toppan Printing Co Ltd 基板露光装置

Also Published As

Publication number Publication date
JPH0564452B2 (show.php) 1993-09-14

Similar Documents

Publication Publication Date Title
US10438918B2 (en) Bonding apparatus and bonding system
US3993509A (en) Semiconductor device manufacture
US5608773A (en) Mask holding device, and an exposure apparatus and a device manufacturing method using the device
US11735465B2 (en) Substrate processing apparatus and substrate processing method
JPH0541133U (ja) 静電カセツトアセンブリ
KR950014607B1 (ko) 반사마스크 및 이를 사용한 하전빔노광장치
US5485495A (en) X-ray mask, and exposure apparatus and device production using the mask
EP0806789A3 (en) Image forming apparatus
US6433346B1 (en) Electrostatic reticle chucks, charged-particle-beam microlithography apparatus and methods, and semiconductor-device manufacturing methods comprising same
JPH05506543A (ja) リソグラフィー装置にマスクを装着するためのマスクトレーおよび方法
JPS6184018A (ja) X線露光装置
US20230014665A1 (en) Substrate processing apparatus and substrate processing method
JP5048283B2 (ja) 偏向器アレイ、描画装置およびデバイス製造方法
JP2002305138A (ja) 露光装置および露光方法
AU3294295A (en) Manufacture methods of electron-emitting device, electron source, and image-forming apparatus
GB2368716A (en) Manufacturing system for a wafer combining an optical exposure apparatus and an electron beam exposure apparatus
JPS6132998A (ja) X線転写装置
JP2000100917A (ja) 静電チャック装置
JP3143896B2 (ja) 荷電粒子線露光装置
JPH06132388A (ja) ウエハ保持機構
JP3461287B2 (ja) パターン露光方法およびパターン露光装置
JPS59163745A (ja) イオン打込み装置
JPS59195826A (ja) レジスト塗布装置
JP2601309B2 (ja) ウエハ周辺露光装置
JPS61183926A (ja) 荷電ビ−ム照射装置