JPS617757B2 - - Google Patents

Info

Publication number
JPS617757B2
JPS617757B2 JP54113216A JP11321679A JPS617757B2 JP S617757 B2 JPS617757 B2 JP S617757B2 JP 54113216 A JP54113216 A JP 54113216A JP 11321679 A JP11321679 A JP 11321679A JP S617757 B2 JPS617757 B2 JP S617757B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54113216A
Other languages
Japanese (ja)
Other versions
JPS5637683A (en
Inventor
Yoshihito Amamya
Takayuki Sugata
Yoshihiko Mizushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11321679A priority Critical patent/JPS5637683A/ja
Priority to GB8006652A priority patent/GB2050694B/en
Priority to NLAANVRAGE8001226,A priority patent/NL188434C/xx
Priority to DE19803008034 priority patent/DE3008034A1/de
Priority to CA000347000A priority patent/CA1150417A/en
Priority to FR8004965A priority patent/FR2456389B1/fr
Publication of JPS5637683A publication Critical patent/JPS5637683A/ja
Priority to US06/512,942 priority patent/US4587547A/en
Publication of JPS617757B2 publication Critical patent/JPS617757B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP11321679A 1979-05-07 1979-09-04 Semiconductor rectifying device Granted JPS5637683A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP11321679A JPS5637683A (en) 1979-09-04 1979-09-04 Semiconductor rectifying device
GB8006652A GB2050694B (en) 1979-05-07 1980-02-27 Electrode structure for a semiconductor device
NLAANVRAGE8001226,A NL188434C (nl) 1979-05-07 1980-02-29 Elektrodestructuur.
DE19803008034 DE3008034A1 (de) 1979-05-07 1980-03-03 Elektrodenvorrichtung fuer eine halbleitervorrichtung
CA000347000A CA1150417A (en) 1979-05-07 1980-03-05 Electrode structure for a semiconductor device
FR8004965A FR2456389B1 (fr) 1979-05-07 1980-03-05 Structure d'electrodes pour dispositifs semi-conducteurs
US06/512,942 US4587547A (en) 1979-05-07 1983-07-12 Electrode structure for a semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11321679A JPS5637683A (en) 1979-09-04 1979-09-04 Semiconductor rectifying device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP14140185A Division JPS6139575A (ja) 1985-06-27 1985-06-27 半導体整流装置

Publications (2)

Publication Number Publication Date
JPS5637683A JPS5637683A (en) 1981-04-11
JPS617757B2 true JPS617757B2 (enrdf_load_stackoverflow) 1986-03-08

Family

ID=14606506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11321679A Granted JPS5637683A (en) 1979-05-07 1979-09-04 Semiconductor rectifying device

Country Status (1)

Country Link
JP (1) JPS5637683A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190704U (enrdf_load_stackoverflow) * 1987-05-27 1988-12-08
US9054066B2 (en) 2012-08-30 2015-06-09 Kabushiki Kaisha Toshiba Semiconductor device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4641174A (en) * 1983-08-08 1987-02-03 General Electric Company Pinch rectifier
DE3633161A1 (de) * 1986-09-30 1988-04-07 Licentia Gmbh Halbleiterbauelement mit einer anodenseitigen p-zone und einer anliegenden schwach dotierten n-basiszone
JPH0642541B2 (ja) * 1988-04-22 1994-06-01 サンケン電気株式会社 ショットキバリア半導体装置
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JP3321070B2 (ja) 1998-02-16 2002-09-03 旭光学工業株式会社 内視鏡の処置具挿入補助具とそれに用いられる処置具
JP4810776B2 (ja) * 2001-08-03 2011-11-09 富士電機株式会社 半導体装置
JP2006295062A (ja) * 2005-04-14 2006-10-26 Rohm Co Ltd 半導体装置
US7696598B2 (en) * 2005-12-27 2010-04-13 Qspeed Semiconductor Inc. Ultrafast recovery diode
US8634218B2 (en) 2009-10-06 2014-01-21 Power Integrations, Inc. Monolithic AC/DC converter for generating DC supply voltage
US8310845B2 (en) 2010-02-10 2012-11-13 Power Integrations, Inc. Power supply circuit with a control terminal for different functional modes of operation
CN108701722B (zh) 2016-02-29 2021-06-11 三菱电机株式会社 半导体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63190704U (enrdf_load_stackoverflow) * 1987-05-27 1988-12-08
US9054066B2 (en) 2012-08-30 2015-06-09 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
JPS5637683A (en) 1981-04-11

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