JPS6177388A - 半導体レ−ザの共振端面反射率測定装置 - Google Patents

半導体レ−ザの共振端面反射率測定装置

Info

Publication number
JPS6177388A
JPS6177388A JP59199007A JP19900784A JPS6177388A JP S6177388 A JPS6177388 A JP S6177388A JP 59199007 A JP59199007 A JP 59199007A JP 19900784 A JP19900784 A JP 19900784A JP S6177388 A JPS6177388 A JP S6177388A
Authority
JP
Japan
Prior art keywords
laser
semiconductor laser
light
output
reflected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59199007A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0370915B2 (enrdf_load_stackoverflow
Inventor
Osamu Yamamoto
修 山本
Haruhisa Takiguchi
治久 瀧口
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59199007A priority Critical patent/JPS6177388A/ja
Priority to US06/777,247 priority patent/US4660983A/en
Priority to DE19853533465 priority patent/DE3533465A1/de
Priority to GB8523301A priority patent/GB2166237B/en
Publication of JPS6177388A publication Critical patent/JPS6177388A/ja
Publication of JPH0370915B2 publication Critical patent/JPH0370915B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Semiconductor Lasers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59199007A 1984-09-21 1984-09-21 半導体レ−ザの共振端面反射率測定装置 Granted JPS6177388A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59199007A JPS6177388A (ja) 1984-09-21 1984-09-21 半導体レ−ザの共振端面反射率測定装置
US06/777,247 US4660983A (en) 1984-09-21 1985-09-18 Apparatus for measuring reflectivities of resonator facets of semiconductor laser
DE19853533465 DE3533465A1 (de) 1984-09-21 1985-09-19 Vorrichtung zur messung der reflexionsvermoegen von resonatorfacetten von halbleiterlasern
GB8523301A GB2166237B (en) 1984-09-21 1985-09-20 Apparatus for measuring reflectivities of resonator facets of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59199007A JPS6177388A (ja) 1984-09-21 1984-09-21 半導体レ−ザの共振端面反射率測定装置

Publications (2)

Publication Number Publication Date
JPS6177388A true JPS6177388A (ja) 1986-04-19
JPH0370915B2 JPH0370915B2 (enrdf_load_stackoverflow) 1991-11-11

Family

ID=16400552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59199007A Granted JPS6177388A (ja) 1984-09-21 1984-09-21 半導体レ−ザの共振端面反射率測定装置

Country Status (4)

Country Link
US (1) US4660983A (enrdf_load_stackoverflow)
JP (1) JPS6177388A (enrdf_load_stackoverflow)
DE (1) DE3533465A1 (enrdf_load_stackoverflow)
GB (1) GB2166237B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2663437B2 (ja) * 1987-05-27 1997-10-15 ソニー株式会社 半導体レーザ装置
DE3916924C1 (en) * 1989-05-24 1990-05-31 Ant Nachrichtentechnik Gmbh, 7150 Backnang, De Testing electro-optical qualities of semiconductor components - combining several edge-emitting components on wafer and detecting emitted light by opto-electric transducer
US5191204A (en) * 1991-10-28 1993-03-02 International Business Machines Corporation Multi-beam optical system and method with power detection of overlapping beams
US5481360A (en) * 1992-06-19 1996-01-02 Citizen Watch Co., Ltd. Optical device for measuring surface shape
US5247167A (en) * 1992-08-06 1993-09-21 International Business Machines Corporation Multiple beam power monitoring system and method with radiation detection and focusing means of overlapping beams
US5606802A (en) * 1995-02-22 1997-03-04 Kabushiki Kaisha Topcon Laser gradient setting device
US5839199A (en) * 1993-09-07 1998-11-24 Kabushiki Kaisha Topcon Laser gradient setting device
US6541288B1 (en) * 2001-09-07 2003-04-01 The United States Of America As Represented By The National Security Agency Method of determining semiconductor laser facet reflectivity after facet reflectance modification
TWI733579B (zh) * 2019-09-09 2021-07-11 全新光電科技股份有限公司 垂直共振腔表面放射雷射二極體（vcsel）的量測方法及磊晶片測試治具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4156571A (en) * 1977-09-07 1979-05-29 The Singer Company Laser mirror scatter and reflectivity measuring system

Also Published As

Publication number Publication date
GB8523301D0 (en) 1985-10-23
DE3533465A1 (de) 1986-03-27
US4660983A (en) 1987-04-28
JPH0370915B2 (enrdf_load_stackoverflow) 1991-11-11
GB2166237B (en) 1988-05-11
DE3533465C2 (enrdf_load_stackoverflow) 1990-04-12
GB2166237A (en) 1986-04-30

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees