JPS6177353A - 半導体整流装置 - Google Patents
半導体整流装置Info
- Publication number
- JPS6177353A JPS6177353A JP59198703A JP19870384A JPS6177353A JP S6177353 A JPS6177353 A JP S6177353A JP 59198703 A JP59198703 A JP 59198703A JP 19870384 A JP19870384 A JP 19870384A JP S6177353 A JPS6177353 A JP S6177353A
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- case
- resin
- conductive pattern
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W76/47—
Landscapes
- Rectifiers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198703A JPS6177353A (ja) | 1984-09-25 | 1984-09-25 | 半導体整流装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59198703A JPS6177353A (ja) | 1984-09-25 | 1984-09-25 | 半導体整流装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6177353A true JPS6177353A (ja) | 1986-04-19 |
| JPH0568860B2 JPH0568860B2 (index.php) | 1993-09-29 |
Family
ID=16395615
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59198703A Granted JPS6177353A (ja) | 1984-09-25 | 1984-09-25 | 半導体整流装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6177353A (index.php) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943842A (en) * | 1987-03-11 | 1990-07-24 | Kabushiki Kaisha Toshiba | Semiconductor device with fuse function |
| EP1587140A3 (de) * | 2004-03-12 | 2009-04-01 | Robert Bosch Gmbh | Elektronisches Bauteil mit einer Schaltung, die mit einer Gelschicht versehen ist und Verfahren zur Herstellung des Bauteils |
-
1984
- 1984-09-25 JP JP59198703A patent/JPS6177353A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4943842A (en) * | 1987-03-11 | 1990-07-24 | Kabushiki Kaisha Toshiba | Semiconductor device with fuse function |
| EP1587140A3 (de) * | 2004-03-12 | 2009-04-01 | Robert Bosch Gmbh | Elektronisches Bauteil mit einer Schaltung, die mit einer Gelschicht versehen ist und Verfahren zur Herstellung des Bauteils |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568860B2 (index.php) | 1993-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4670771A (en) | Rectifier module | |
| US4849803A (en) | Molded resin semiconductor device | |
| JP3429921B2 (ja) | 半導体装置 | |
| US20100127387A1 (en) | Power semiconductor module | |
| IT1280673B1 (it) | Modulo di dispositivi a semiconduttori di alta potenza con bassa resistenza termica e metodo di fabbricazione semplificato | |
| CN110914975B (zh) | 功率半导体模块 | |
| JP2009278712A (ja) | インバータ装置 | |
| JPS59130449A (ja) | 絶縁型半導体素子用リードフレーム | |
| US6137170A (en) | Mount for semiconductor device | |
| CN109273418A (zh) | 一种芯片封装结构及方法 | |
| KR20230025132A (ko) | 스티프너를 포함하는 반도체 패키지 | |
| US9293390B2 (en) | Heat radiation structure for semiconductor device | |
| JP2000340718A (ja) | 電力用半導体装置 | |
| JPS6177353A (ja) | 半導体整流装置 | |
| JPS58184743A (ja) | モ−ルド型半導体装置 | |
| JP2593867Y2 (ja) | 複合半導体装置 | |
| CN209282186U (zh) | 一种防水型贴片式二极管 | |
| JP4861200B2 (ja) | パワーモジュール | |
| CN221529923U (zh) | 一种功率半导体模块 | |
| KR102228938B1 (ko) | 커플드 반도체 패키지 | |
| US3409808A (en) | High voltage diode for low pressure applications | |
| JPS623984B2 (index.php) | ||
| JPS6020942Y2 (ja) | 半導体装置 | |
| JPS5917543B2 (ja) | 半導体整流装置 | |
| JPH0433138B2 (index.php) |