JPS6167968A - ＧａＡｓ太陽電池素子 - Google Patents

ＧａＡｓ太陽電池素子

Info

Publication number
JPS6167968A
JPS6167968A JP59190041A JP19004184A JPS6167968A JP S6167968 A JPS6167968 A JP S6167968A JP 59190041 A JP59190041 A JP 59190041A JP 19004184 A JP19004184 A JP 19004184A JP S6167968 A JPS6167968 A JP S6167968A
Authority
JP
Japan
Prior art keywords
solar cell
cell element
gaas
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59190041A
Other languages
English (en)
Japanese (ja)
Other versions
JPH051627B2 (enrdf_load_stackoverflow
Inventor
Hisanobu Matsutani
松谷　寿信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59190041A priority Critical patent/JPS6167968A/ja
Publication of JPS6167968A publication Critical patent/JPS6167968A/ja
Publication of JPH051627B2 publication Critical patent/JPH051627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/144—Photovoltaic cells having only PN homojunction potential barriers comprising only Group III-V materials, e.g. GaAs,AlGaAs, or InP photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/50—Integrated devices comprising at least one photovoltaic cell and other types of semiconductor or solid-state components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1276—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising growth substrates not made of Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59190041A 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子 Granted JPS6167968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59190041A JPS6167968A (ja) 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59190041A JPS6167968A (ja) 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子

Publications (2)

Publication Number Publication Date
JPS6167968A true JPS6167968A (ja) 1986-04-08
JPH051627B2 JPH051627B2 (enrdf_load_stackoverflow) 1993-01-08

Family

ID=16251371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59190041A Granted JPS6167968A (ja) 1984-09-11 1984-09-11 ＧａＡｓ太陽電池素子

Country Status (1)

Country Link
JP (1) JPS6167968A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414974A (en) * 1987-07-08 1989-01-19 Mitsubishi Electric Corp Inverse conductive solar battery cell
US4915744A (en) * 1989-02-03 1990-04-10 Applied Solar Energy Corporation High efficiency solar cell
US4997491A (en) * 1988-11-16 1991-03-05 Mitsubishi Denki Kabushiki Kaisha Solar cell and a production method therefor
US5009720A (en) * 1988-11-16 1991-04-23 Mitsubishi Denki Kabushiki Kaisha Solar cell
JPH04307771A (ja) * 1991-04-04 1992-10-29 Hitachi Ltd 太陽電池及びそれを用いた太陽電池モジュール
WO2000021138A1 (de) * 1998-10-05 2000-04-13 Astrium Gmbh Solarzelle mit bypassdiode
WO2001006565A1 (en) * 1999-07-14 2001-01-25 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
JP2005183957A (ja) * 2003-12-15 2005-07-07 Photowatt Internatl Sa 積層内に電子装置を有する太陽電池モジュール
JP2007073898A (ja) * 2005-09-09 2007-03-22 Sharp Corp バイパス機能付き太陽電池およびその製造方法
JP2009158697A (ja) * 2007-12-26 2009-07-16 Sharp Corp 太陽電池セル用バイパスダイオードおよびその製造方法
EP2388825A3 (en) * 2010-05-17 2013-03-06 The Boeing Company Solar cell structure including a silicon carrier containing a by-pass diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122393A (en) * 1977-03-30 1978-10-25 Siemens Ag Thin film solar battery
JPS5613778A (en) * 1979-07-16 1981-02-10 Shunpei Yamazaki Photoelectric converter and its preparation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122393A (en) * 1977-03-30 1978-10-25 Siemens Ag Thin film solar battery
JPS5613778A (en) * 1979-07-16 1981-02-10 Shunpei Yamazaki Photoelectric converter and its preparation

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414974A (en) * 1987-07-08 1989-01-19 Mitsubishi Electric Corp Inverse conductive solar battery cell
US4997491A (en) * 1988-11-16 1991-03-05 Mitsubishi Denki Kabushiki Kaisha Solar cell and a production method therefor
US5009720A (en) * 1988-11-16 1991-04-23 Mitsubishi Denki Kabushiki Kaisha Solar cell
US4915744A (en) * 1989-02-03 1990-04-10 Applied Solar Energy Corporation High efficiency solar cell
JPH04307771A (ja) * 1991-04-04 1992-10-29 Hitachi Ltd 太陽電池及びそれを用いた太陽電池モジュール
WO2000021138A1 (de) * 1998-10-05 2000-04-13 Astrium Gmbh Solarzelle mit bypassdiode
WO2001006565A1 (en) * 1999-07-14 2001-01-25 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
US6635507B1 (en) 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
JP2005183957A (ja) * 2003-12-15 2005-07-07 Photowatt Internatl Sa 積層内に電子装置を有する太陽電池モジュール
JP2007073898A (ja) * 2005-09-09 2007-03-22 Sharp Corp バイパス機能付き太陽電池およびその製造方法
JP2009158697A (ja) * 2007-12-26 2009-07-16 Sharp Corp 太陽電池セル用バイパスダイオードおよびその製造方法
EP2388825A3 (en) * 2010-05-17 2013-03-06 The Boeing Company Solar cell structure including a silicon carrier containing a by-pass diode
US8878048B2 (en) 2010-05-17 2014-11-04 The Boeing Company Solar cell structure including a silicon carrier containing a by-pass diode

Also Published As

Publication number Publication date
JPH051627B2 (enrdf_load_stackoverflow) 1993-01-08

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees