JPS6163041A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6163041A
JPS6163041A JP12934585A JP12934585A JPS6163041A JP S6163041 A JPS6163041 A JP S6163041A JP 12934585 A JP12934585 A JP 12934585A JP 12934585 A JP12934585 A JP 12934585A JP S6163041 A JPS6163041 A JP S6163041A
Authority
JP
Japan
Prior art keywords
regions
type
semiconductor
wiring
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12934585A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6137782B2 (enrdf_load_stackoverflow
Inventor
Masanori Kikuchi
菊地 正典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP12934585A priority Critical patent/JPS6163041A/ja
Publication of JPS6163041A publication Critical patent/JPS6163041A/ja
Publication of JPS6137782B2 publication Critical patent/JPS6137782B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP12934585A 1985-06-14 1985-06-14 半導体装置の製造方法 Granted JPS6163041A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12934585A JPS6163041A (ja) 1985-06-14 1985-06-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12934585A JPS6163041A (ja) 1985-06-14 1985-06-14 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP367481A Division JPS56158455A (en) 1981-01-12 1981-01-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6163041A true JPS6163041A (ja) 1986-04-01
JPS6137782B2 JPS6137782B2 (enrdf_load_stackoverflow) 1986-08-26

Family

ID=15007311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12934585A Granted JPS6163041A (ja) 1985-06-14 1985-06-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6163041A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6137782B2 (enrdf_load_stackoverflow) 1986-08-26

Similar Documents

Publication Publication Date Title
US5218218A (en) Semiconductor device and manufacturing method thereof
EP0193116B1 (en) Method of manufacturing a semiconductor device having a trench
US4425379A (en) Polycrystalline silicon Schottky diode array
US4825281A (en) Bipolar transistor with sidewall bare contact structure
US4216491A (en) Semiconductor integrated circuit isolated through dielectric material
JPS598065B2 (ja) Mos集積回路の製造方法
JPS6163041A (ja) 半導体装置の製造方法
JPS5848438A (ja) 半導体集積回路装置
JPS6113383B2 (enrdf_load_stackoverflow)
JPS61135136A (ja) 半導体装置の製造方法
JPH02192724A (ja) 半導体装置およびその製造方法
JPH0548108A (ja) 半導体装置およびその製造方法
JPS623583B2 (enrdf_load_stackoverflow)
JPS623593B2 (enrdf_load_stackoverflow)
JPS6118350B2 (enrdf_load_stackoverflow)
JPS62113466A (ja) 半導体記憶装置の製造方法
JPS5931860B2 (ja) 半導体装置
JPH0258367A (ja) 半導体装置
JPH0414497B2 (enrdf_load_stackoverflow)
JPH0427694B2 (enrdf_load_stackoverflow)
JPS5933984B2 (ja) 絶縁ゲイト型電界効果半導体装置の作製方法
JPS6163061A (ja) 半導体装置
JPH0262061A (ja) トレンチ絶縁式半導体装置
JPS6018151B2 (ja) 絶縁ゲ−ト型電界効果トランジスタの製造方法
JPS604258A (ja) 半導体装置の構造