JPS616196A - 液相エピタキシヤル成長方法 - Google Patents

液相エピタキシヤル成長方法

Info

Publication number
JPS616196A
JPS616196A JP59127937A JP12793784A JPS616196A JP S616196 A JPS616196 A JP S616196A JP 59127937 A JP59127937 A JP 59127937A JP 12793784 A JP12793784 A JP 12793784A JP S616196 A JPS616196 A JP S616196A
Authority
JP
Japan
Prior art keywords
growth
melt
solution
epitaxial growth
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59127937A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0557236B2 (enExample
Inventor
Shigeru Nagao
長尾　茂
Susumu Furuike
進 古池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59127937A priority Critical patent/JPS616196A/ja
Publication of JPS616196A publication Critical patent/JPS616196A/ja
Publication of JPH0557236B2 publication Critical patent/JPH0557236B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP59127937A 1984-06-21 1984-06-21 液相エピタキシヤル成長方法 Granted JPS616196A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59127937A JPS616196A (ja) 1984-06-21 1984-06-21 液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59127937A JPS616196A (ja) 1984-06-21 1984-06-21 液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS616196A true JPS616196A (ja) 1986-01-11
JPH0557236B2 JPH0557236B2 (enExample) 1993-08-23

Family

ID=14972320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59127937A Granted JPS616196A (ja) 1984-06-21 1984-06-21 液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS616196A (enExample)

Also Published As

Publication number Publication date
JPH0557236B2 (enExample) 1993-08-23

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