JPS6160502B2 - - Google Patents
Info
- Publication number
- JPS6160502B2 JPS6160502B2 JP57178897A JP17889782A JPS6160502B2 JP S6160502 B2 JPS6160502 B2 JP S6160502B2 JP 57178897 A JP57178897 A JP 57178897A JP 17889782 A JP17889782 A JP 17889782A JP S6160502 B2 JPS6160502 B2 JP S6160502B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ions
- bubble
- temperature
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 32
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 5
- 239000010931 gold Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000005415 magnetization Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001552 radio frequency sputter deposition Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57178897A JPS5968888A (ja) | 1982-10-12 | 1982-10-12 | イオン注入バブルデバイスの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57178897A JPS5968888A (ja) | 1982-10-12 | 1982-10-12 | イオン注入バブルデバイスの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5968888A JPS5968888A (ja) | 1984-04-18 |
| JPS6160502B2 true JPS6160502B2 (US06826419-20041130-M00005.png) | 1986-12-20 |
Family
ID=16056597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57178897A Granted JPS5968888A (ja) | 1982-10-12 | 1982-10-12 | イオン注入バブルデバイスの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5968888A (US06826419-20041130-M00005.png) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01115307U (US06826419-20041130-M00005.png) * | 1988-01-29 | 1989-08-03 |
-
1982
- 1982-10-12 JP JP57178897A patent/JPS5968888A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01115307U (US06826419-20041130-M00005.png) * | 1988-01-29 | 1989-08-03 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5968888A (ja) | 1984-04-18 |
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