JPS6159661B2 - - Google Patents
Info
- Publication number
- JPS6159661B2 JPS6159661B2 JP54056297A JP5629779A JPS6159661B2 JP S6159661 B2 JPS6159661 B2 JP S6159661B2 JP 54056297 A JP54056297 A JP 54056297A JP 5629779 A JP5629779 A JP 5629779A JP S6159661 B2 JPS6159661 B2 JP S6159661B2
- Authority
- JP
- Japan
- Prior art keywords
- heat dissipating
- insulating member
- electrode
- dissipating electrode
- electrode body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Rectifiers (AREA)
- Synchronous Machinery (AREA)
Description
【発明の詳細な説明】
この発明は半導体整流装置にかかり、特に強化
された構造の半導体整流装置に関する。
一例の車輌等に用いられる発電機に好適する整
流回路として半導体整流素子（以降ダイオードと
略称する）を用いた三相ブリツジによる全波整流
が知られている。その回路図を第１図に示す。図
においては、１は三相交流発電機、２は整流回路
部でダイオード２ａ，２ｂ，…２ｆによつてブリ
ツジが構成され、出力は＋側端子２ｐと一側端子
２ｍに得る如くなる。そして発明者等が発明達成
の段階において形成した半導体整流装置（以降整
流装置と略称する）の構造は第２図に全般の斜視
図、第３図ないし第５図に部分の構造を説明する
ための図、第６図に取着を説明するための図によ
り示される。図において、３ａ，３ｂは放熱電極
体でたとえばアルミニウムの如き良導電熱材でな
り、外側はフインに、内側は鑞接性の良い金属層
４が被着され、これに一例のボタン型ダイオード
２ａ，２ｂ…が各々の１方の電極で鑞接されて整
流回路の出力端子２ｐ，２ｍとなる。また、各ダ
イオードの前記と反対側の電極は対応するリード
５ａ，５ｂ…５ｆの夫々の一端な鑞接される。そ
して前記リードの他端は放熱電極体の側方へ突出
し、こゝに発電機のAC入力配線が接続される端
子に形成される。なお、前記ダイオードはこれら
が配設される放熱電極体３ａ，３ｂごとに極性を
異にし、第３図に第２図の二点鎖線Ａ−Ａに沿う
断面にて示される如く、たとえばリード５ａ，５
ｅは端子部にて発電機から導出される一つの配線
６と接続される。また、７は第４図に斜視図示さ
れる電気絶縁部材で、一例のエポキシ樹脂でモー
ルド形成されたもので、側方から挿入しリードの
端子部を角孔７ａ，７ｂ，７ｃから突出せしめ
る。次に前記電気絶縁部材７と二つの放熱電極体
３ａ，３ｂとの結合はその要部が第５図に示され
る如く、電気絶縁部材７の端部にねじまたはかし
めピン等による締結手段８ａ，８ｂを施して一体
となし結合を達成する。
前記一例の整流装置は発明者等がこの発明達成
に至る段階で案出したものであるが、第５図に示
される放熱電極体３ａ，３ｂに設けられたこの装
置の取着孔にボルト９ａ，９ｂによつて取着され
るが、第６図に示す如く、双方の放熱電極体の取
着部１０ａ，１０ｂ間に段差（ｈ）が存するとき
（かかる場合は現実に極めて多い）、この取着によ
り生じる歪はクツシヨンを介せずダイオードに集
中し、特にボタン型のダイオードにおいてはダイ
オードにクツシヨンを有しないのでダイオードに
破損をみる恐れがあるなどの不具合が懸念され
た。また、製品について、これが使用される場合
外部から印加される振動、例えば発電機の作動に
よる振動がリードへ直接印加されてダメージにな
るという問題もあつた。
この発明は上記従来の問題点を鑑み、半導体整
流装置の改良された構造を提供するものである。
この発明にかかる半導体整流装置は、電気絶縁
部材を挟んで締結された放熱電極体の各々の電気
絶縁部材との対向面に、複数半導体整流素子が
各々の一方の電極で取着され他方の電極がリード
で導出されるとともに各放熱電極体毎に上記互い
の締結方向に対し垂直方向の取着孔を有してこの
取着孔にボルトを挿通させて放熱部材に取着され
る半導体整流装置において、放熱電極体の一方が
他方の放熱電極体に対向する面に複数の半導体整
流素子が直線上に各々の一方の電極で配設され他
方の電極がクツシヨンを有するリードピンで前記
放熱電極体の締結方向へ突出して導出され、前記
電気絶縁部材に放熱電極体の締結方向に垂直で中
間部が固着された複数のリードが各一端を前記リ
ードピンの突出端に接続してなるものであり、ま
た素子組立体の構成が極性の異なる対になり、電
気絶縁部材を介して夫々の放熱電極体が締結され
たことを特徴とする。
次に、この発明を一実施例につき図面を参照し
て詳細に説明する。第７図は整流装置の斜視図、
第８図は素子組立体の構成を組立工程から説明す
るための斜視図、第９図は組立体の上面図、第１
０図は整流装置の側面断面図、第１１図は整流装
置の側面図、第１２図は整流装置と発電機との回
路図、第１３図はダイオードの断面図を夫々示
す。第７図ないし第１１図において、１３ａ，１
３ｂは放熱電極体で一例としてはアルミニウムの
如き良導電熱材でなり、外側はフインに、内側の
ダイオード配設面に銅の被覆層１４を有し、これ
に第１３図に示される半導体整流素子のピン型ダ
イオード１２ａ，１２ｂ…が各々の一方の電極で
鑞接されて整流回路部２′における＋，−の出力端
子２p′，２m′となる。また、第１１図、第１３
図に示されるピン型ダイオード２２ａ，２２ｂ…
は第２の直流出力を得るために併設された第２の
整流回路部２″，＋出力端子２p″を備える。次
に、この発明の特徴となる＋，−側の素子組立体
１２ｐ，１２ｍのうち、＋側の素子組立体１２ｐ
の組立について第８図，第９図によつて説明す
る。まず、第８図に示すところのアルミニウムで
なる放熱電極体１３ａは外側（図の下面）がフイ
ンに形成され、内側のダイオード配設面には鑞接
性の良い金属層１４が被着される。前記金属層の
被着は一例として微粉銅を塗着したのち加熱して
一部を銅・アルミニウム合金層となし、次に銅め
つき、ニツケルめつきなど（前記のいずれか、ま
たは両方）を施して５〜６μ厚に形成して好適す
る。次にはんだシートを介してダイオード１２
ａ，１２ｂ，１２ｃを載置したのち、リード１５
ａ，１５ｂ，１５ｃを並列したこの夫々の中間部
をエポキシ樹脂の如き電気絶縁部材１７ｐにてモ
ールドし一体になる成形体２７ｐを装着する。リ
ードの各端はそこに設けられた開孔に対応するダ
イオードのピンを挿通しはんだ接合され、リード
の他側端は発電機から導出される配線（図示省
略）を接続する。また、第９図に示される凹部１
７ａ，１７ｂ，１７ｃが夫々ダイオード１２′
ａ，１２′ｂ，１２′ｃを配設するため設けられ
る。
次に、他側の放熱電極体１３ｂを上記と同様に
組立てたのち、第１０図に示される如く、ボルト
２０ｐ，２０ｍにて両放熱電極体１３ａ，１３ｂ
を電気絶縁部材１７ｐ，１７ｍを介して締結す
る。また、前記両ボルトが＋側の放熱電極体１３
ａにおける開孔部を挿通する部分には電気絶縁リ
ング２１ｐ，２１ｍを被覆して短絡を防止する。
さらに、第１２図に示す一実施例の回路図はダイ
オードを三相整流回路分より多く設け、整流回路
の容量増大を企画した一例である。次に、第１３
図に示すピンタイプダイオード２２の断面図によ
つて明らかな如く、一方の電極を導出するカツプ
状部材２２ａに素子ペレツト２２ｂがその一方の
電極で固着（２２ｃは鑞層）され、また、素子ペ
レツトに接続する側にウイスカ部２２d′を有する
リードピン２２ｄ（クツシヨンリード）が前記ウ
イスカ先端にて接続され、前記カツプ状部材の上
縁からピンの中間までを一例のシリコンゴム２２
ｅにて被覆してなるものである。上記構造により
露出した部分のピンに応力が荷重されても素子ペ
レツトないし素子ペレツトとの接続部はウイスカ
と軟質のシリコンゴムとによるクツシヨンよつて
防護される。したがつてボタン型ダイオードに比
し製造が簡単で量産に適するとともに電極間に印
加される機械的応力に耐性が大であるなど数々の
利点を有するため、この発明にかかる整流装置に
用いても組立工程におけるダイオードのダメージ
を低減しうる。
この発明によれば、複数リードがその中間部を
電気縁部材にて一体に固着されるとともに電極絶
縁部材を放熱電極に締結する構造のため、発電機
によるリードへの振動がダイオードに印加される
ことが皆無である。さらに、整流装置の配設にあ
たり配設部の段差等によりダイオードが歪などの
ダメージを生ずることがないなどにより、また、
改良されたピン型ダイオードを用いることにより
強固なる構造の整流装置が得られる顕著な利点が
ある。 DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor rectifier, and more particularly to a semiconductor rectifier having a reinforced structure. Full-wave rectification using a three-phase bridge using semiconductor rectifier elements (hereinafter referred to as diodes) is known as a rectifier circuit suitable for generators used in vehicles and the like. The circuit diagram is shown in FIG. In the figure, 1 is a three-phase alternating current generator, 2 is a rectifier circuit, and a bridge is constructed by diodes 2a, 2b, . The structure of the semiconductor rectifying device (hereinafter referred to as rectifying device) that the inventors formed at the stage of achieving the invention is shown in FIG. 2 as an overall perspective view, and in FIGS. 3 to 5 for explaining the structure of parts. This figure is shown in FIG. 6 for explaining the attachment. In the figure, reference numerals 3a and 3b denote heat dissipating electrode bodies made of a highly conductive thermal material such as aluminum.The outer side is coated with fins, and the inner side is coated with a metal layer 4 with good solderability. , 2b, . . . are soldered to each other at one electrode to become output terminals 2p, 2m of the rectifier circuit. Further, the opposite electrode of each diode is soldered to one end of each of the corresponding leads 5a, 5b...5f. The other end of the lead protrudes to the side of the heat dissipation electrode body, and is formed as a terminal to which the AC input wiring of the generator is connected. Note that the polarity of the diodes differs depending on the heat dissipation electrode bodies 3a and 3b on which they are disposed, and as shown in FIG. ,5
e is connected to one wiring 6 led out from the generator at a terminal portion. Further, reference numeral 7 denotes an electrical insulating member shown in a perspective view in FIG. 4, which is molded with an example of epoxy resin, and is inserted from the side so that the terminal portions of the leads protrude from the square holes 7a, 7b, and 7c. Next, the electrical insulating member 7 and the two heat dissipating electrode bodies 3a, 3b are connected to each other by means of fastening means 8a, such as screws or caulking pins, at the ends of the electrical insulating member 7, as shown in FIG. 8b to achieve integral and integral bonding. The rectifying device of the above example was devised by the inventors at the stage of achieving the present invention, but bolts 9a were inserted into the mounting holes of this device provided in the heat dissipating electrode bodies 3a and 3b shown in FIG. , 9b, but as shown in FIG. 6, when there is a step (h) between the attachment parts 10a and 10b of both heat dissipation electrode bodies (such cases are extremely common in reality), this Distortion caused by attachment is concentrated on the diode without going through the cushion, and there was concern that button-type diodes in particular could cause problems such as damage to the diode because the diode does not have a cushion. Furthermore, when the product is used, vibrations applied from the outside, such as vibrations caused by the operation of a generator, are directly applied to the reeds, causing damage. In view of the above-mentioned conventional problems, the present invention provides an improved structure of a semiconductor rectifier. In the semiconductor rectifying device according to the present invention, a plurality of semiconductor rectifying elements are each attached with one electrode on the surface facing the electrically insulating member of each of the heat dissipating electrode bodies fastened with the electrically insulating member in between, and the other electrode is attached to the surface facing the electrically insulating member. is led out by a lead, and each heat dissipation electrode body has a mounting hole in a direction perpendicular to the above-mentioned mutual fastening direction, and is attached to a heat dissipation member by inserting a bolt into the mounting hole. A plurality of semiconductor rectifying elements are arranged in a straight line on the surface of one of the heat dissipating electrode bodies facing the other heat dissipating electrode body, and the other electrode is a lead pin having a cushion. A plurality of leads projecting in the fastening direction and having middle portions fixed to the electrically insulating member perpendicular to the fastening direction of the heat dissipating electrode body, each one end of which is connected to the protruding end of the lead pin, and It is characterized in that the element assembly is configured as a pair with different polarities, and the respective heat dissipating electrode bodies are fastened together via an electrically insulating member. Next, one embodiment of the present invention will be described in detail with reference to the drawings. Figure 7 is a perspective view of the rectifier;
FIG. 8 is a perspective view for explaining the configuration of the element assembly from the assembly process; FIG. 9 is a top view of the assembly;
FIG. 0 is a side sectional view of the rectifier, FIG. 11 is a side view of the rectifier, FIG. 12 is a circuit diagram of the rectifier and generator, and FIG. 13 is a sectional view of the diode. In Figures 7 to 11, 13a, 1
Reference numeral 3b denotes a heat-dissipating electrode body made of a highly conductive heat material such as aluminum, which has a fin on the outside and a copper coating layer 14 on the inside surface where the diode is disposed, and a semiconductor rectifier shown in FIG. The pin-type diodes 12a, 12b, . . . of the elements are soldered to one electrode of each to become + and - output terminals 2p' and 2m' in the rectifier circuit section 2' . Also, Figures 11 and 13
Pin type diodes 22a, 22b... shown in the figure
is equipped with a second rectifier circuit section 2'' and a +output terminal 2p'' which are provided in order to obtain a second DC output. Next, among the + and - side element assemblies 12p and 12m, which are the features of this invention, the + side element assembly 12p
The assembly will be explained with reference to FIGS. 8 and 9. First, the heat dissipating electrode body 13a made of aluminum as shown in FIG. 8 is formed into a fin on the outside (bottom surface in the figure), and a metal layer 14 with good solderability is deposited on the inside surface where the diode is disposed. . An example of the application of the metal layer is to apply fine copper powder, heat it to form a copper/aluminum alloy layer, and then apply copper plating, nickel plating, etc. (one or both of the above). It is preferable to apply the film to a thickness of 5 to 6 μm. Next, connect the diode 12 via the solder sheet.
After placing a, 12b, and 12c, lead 15
A, 15b, and 15c are arranged in parallel, and the intermediate portions of each are molded with an electrically insulating member 17p such as epoxy resin, and a molded body 27p is attached thereto. Each end of the lead is soldered by inserting a corresponding diode pin into an opening provided therein, and the other end of the lead is connected to a wiring (not shown) led out from the generator. In addition, the recess 1 shown in FIG.
7a, 17b, 17c are diodes 12', respectively.
a, 12'b, and 12'c. Next, after assembling the heat dissipation electrode body 13b on the other side in the same manner as described above, both heat dissipation electrode bodies 13a, 13b are assembled with bolts 20p, 20m as shown in FIG.
are fastened via electrically insulating members 17p and 17m. Further, both the bolts are on the + side of the heat dissipation electrode body 13
The portions inserted through the openings a are covered with electrically insulating rings 21p and 21m to prevent short circuits.
Further, the circuit diagram of the embodiment shown in FIG. 12 is an example in which more diodes are provided than in the three-phase rectifier circuit to increase the capacity of the rectifier circuit. Next, the 13th
As is clear from the cross-sectional view of the pin type diode 22 shown in the figure, an element pellet 22b is fixed by one electrode (22c is a solder layer) to a cup-shaped member 22a from which one electrode is led out, and the element pellet A lead pin 22d (cushion lead) having a whisker portion 22d' on the side to be connected to is connected at the tip of the whisker, and a silicone rubber 22, which is an example, is connected from the upper edge of the cup-shaped member to the middle of the pin.
It is coated with e. Due to the above structure, even if stress is applied to the exposed portion of the pin, the element pellet or the connection portion with the element pellet is protected by the cushion made of whiskers and soft silicone rubber. Therefore, it has many advantages over button-type diodes, such as being easier to manufacture and suitable for mass production, and being highly resistant to mechanical stress applied between electrodes, so it can also be used in the rectifier according to the present invention. Damage to the diode during the assembly process can be reduced. According to this invention, since the plurality of leads have a structure in which the middle portions of the leads are fixed together by the electric edge member and the electrode insulating member is fastened to the heat dissipation electrode, vibrations to the leads by the generator are applied to the diode. There are no such things. Furthermore, when installing the rectifier, the diodes will not suffer damage such as distortion due to differences in the installation part, etc., and
The use of improved pin type diodes has the distinct advantage of providing a more robust construction of the rectifier.
第１図は整流装置の回路図、第２図ないし第６
図は従来の整流装置に関し、第２図は全体の斜視
図、第３図は第２図のAA′線に沿う断面図、第４
図は電気絶縁部材の斜視図、第５図は構造を説明
するための正面図、第６図は取着を説明するため
の側面図、第７図ないし第１３図は本発明にかか
る一実施例の整流装置に関し、第７図は全体の斜
視図、第８図は素子組立体の組立を説明するため
の斜視図、第９図は素子組立体の上面図、第１０
図は全体の断面図、第１１図は全板体の上面図、
第１２図は回路図、第１３図はピンタイプダイオ
ードの断面図である。なお、図中同一符号は同一
または相当部分を夫々示すものとする。
１……交流発電機、２′，２″……整流装置
（部）、１２ａ，１２ｂ…１２a′，１２ｂ，…′…
…ダイオード、１３ａ，１３ｂ……放熱電極体、
１４……鑞接できる金属層、１５ａ，１５ｂ，１
５ｃ，……リード、１７ｐ，１７ｍ……電気絶縁
部材（エポキシ樹脂）、２０ｐ，２０ｍ……締結
用ボルト、２２……ピンタイプダイオード。
Figure 1 is the circuit diagram of the rectifier, Figures 2 to 6
The figures relate to a conventional rectifier, in which Fig. 2 is an overall perspective view, Fig. 3 is a sectional view taken along line AA' in Fig. 2, and Fig. 4 is a sectional view taken along line AA' in Fig. 2.
5 is a front view for explaining the structure, FIG. 6 is a side view for explaining attachment, and FIGS. 7 to 13 are one embodiment of the present invention. Regarding the example rectifying device, FIG. 7 is an overall perspective view, FIG. 8 is a perspective view for explaining the assembly of the element assembly, FIG. 9 is a top view of the element assembly, and FIG.
The figure is a cross-sectional view of the entire plate, and Figure 11 is a top view of the entire plate.
FIG. 12 is a circuit diagram, and FIG. 13 is a cross-sectional view of the pin type diode. Note that the same reference numerals in the figures indicate the same or corresponding parts, respectively. 1... AC generator, 2' , 2'' ... Rectifier (part), 12a, 12b... 12a', 12b,...'...
...Diode, 13a, 13b... Heat dissipation electrode body,
14...Metal layer that can be soldered, 15a, 15b, 1
5c,... Lead, 17p, 17m... Electrical insulating member (epoxy resin), 20p, 20m... Fastening bolt, 22 ... Pin type diode.
Claims (1)
熱電極体の各々の電気絶縁部材との対向面に、複
数半導体整流素子が各々の一方の電極で取着され
他方の電極がリードで導出されるとともに各放熱
電極体毎に上記互いの締結方向に対し垂直方向の
取着孔を有してこの取着孔にボルトを挿通させて
放熱部材に取着される半導体整流装置において、
放熱電極体の一方が他方の放熱電極体に対向する
面に複数の半導体整流素子が直線上に各々の一方
の電極で配設され他方の電極がクツシヨンを有す
るリードピンで前記放熱電極体の締結方向へ突出
して導出され、前記電気絶縁部材に放熱電極体の
締結方向に垂直で中間部が固着された複数のリー
ドが各一端を前記リードピンの突出端に接続して
なる半導体整流装置。 ２ 素子組立体の構成が極性の異なる対になり、
電気絶縁部材を介して夫々の放熱電極体が締結さ
れたことを特徴とする特許請求の範囲第１項記載
の半導体整流装置。[Scope of Claims] 1. A plurality of semiconductor rectifying elements are each attached to one electrode of a heat dissipating electrode assembly fastened with a flat electrical insulating member interposed therebetween, on the surface facing each electrical insulating member. A semiconductor rectifier in which electrodes are led out by leads, and each heat dissipating electrode body has a mounting hole in a direction perpendicular to the above-mentioned mutual fastening direction, and is attached to a heat dissipating member by inserting a bolt into the mounting hole. In the device,
A plurality of semiconductor rectifying elements are arranged in a straight line on a surface where one of the heat dissipating electrode bodies faces the other heat dissipating electrode body, and the other electrode is a lead pin having a cushion in the fastening direction of the heat dissipating electrode body. A semiconductor rectifier device comprising a plurality of leads projecting out from the electrically insulating member and having middle portions fixed to the electrically insulating member in a direction perpendicular to the fastening direction of the heat dissipating electrode body, each having one end connected to the protruding end of the lead pin. 2 The configuration of the element assembly is a pair with different polarities,
2. The semiconductor rectifier device according to claim 1, wherein the respective heat dissipating electrode bodies are fastened together via an electrically insulating member.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5629779A JPS55148452A (en) | 1979-05-10 | 1979-05-10 | Semiconductor rectifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5629779A JPS55148452A (en) | 1979-05-10 | 1979-05-10 | Semiconductor rectifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55148452A JPS55148452A (en) | 1980-11-19 |
| JPS6159661B2 true JPS6159661B2 (en) | 1986-12-17 |
Family
ID=13023173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5629779A Granted JPS55148452A (en) | 1979-05-10 | 1979-05-10 | Semiconductor rectifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55148452A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4841182A (en) * | 1986-08-28 | 1989-06-20 | Mitsuba Electric Mfg., Co., Ltd. | Rectifier in alternating generators for automotive vehicles |
| KR100361695B1 (en) * | 2000-04-03 | 2002-11-22 | 주식회사 케이이씨 | A Rectifier diode manufacture method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159973A (en) * | 1974-06-17 | 1975-12-24 | ||
| JPS5177173A (en) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | Handotaisochino tanshikozo |
| JPS5366520A (en) * | 1977-11-25 | 1978-06-14 | Hitachi Ltd | All wave rectifying device |
-
1979
- 1979-05-10 JP JP5629779A patent/JPS55148452A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159973A (en) * | 1974-06-17 | 1975-12-24 | ||
| JPS5177173A (en) * | 1974-12-27 | 1976-07-03 | Tokyo Shibaura Electric Co | Handotaisochino tanshikozo |
| JPS5366520A (en) * | 1977-11-25 | 1978-06-14 | Hitachi Ltd | All wave rectifying device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55148452A (en) | 1980-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3959676A (en) | Alternator rectifier bridge and method of assembly | |
| US4340902A (en) | Semiconductor device | |
| US4047197A (en) | Housing and lead structure for a series connected semiconductor rectifier arrangement | |
| US3199004A (en) | Connections in semiconductor devices | |
| US5991184A (en) | Vehicular extended thermal cycle minimal part robust rectifier assembly | |
| US3979659A (en) | Automotive alternator rectifier bridges | |
| US4604643A (en) | Semiconductor rectifier device | |
| GB2034520A (en) | Semiconductor assembly | |
| US3348105A (en) | Plastic package full wave rectifier | |
| US3789275A (en) | Alternator rectifier assemblies with resinous molded member containing circuit pattern molded therein | |
| US4057825A (en) | Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered | |
| US6054798A (en) | Piezoelectric transformer with an improved armor case | |
| JPS6159661B2 (en) | ||
| JPS622587A (en) | Hybryd integrated circuit for high power | |
| US3476985A (en) | Semiconductor rectifier unit | |
| US5021926A (en) | Construction of bridge rectifiers | |
| JPS627145A (en) | Power semiconductor device | |
| US11626361B2 (en) | Power semiconductor module | |
| JP4329187B2 (en) | Semiconductor element | |
| JPS5812447Y2 (en) | semiconductor equipment | |
| JPS6076179A (en) | Thermoelectric converter | |
| JPH07226454A (en) | Semiconductor device | |
| JPS59201457A (en) | Semiconductor device | |
| JPS63250164A (en) | High power hybrid integrated circuit substrate and its integrated circuit | |
| JP2017050478A (en) | Resistor |