JPS6076179A - Thermoelectric converter - Google Patents

Thermoelectric converter

Info

Publication number
JPS6076179A
JPS6076179A JP58183725A JP18372583A JPS6076179A JP S6076179 A JPS6076179 A JP S6076179A JP 58183725 A JP58183725 A JP 58183725A JP 18372583 A JP18372583 A JP 18372583A JP S6076179 A JPS6076179 A JP S6076179A
Authority
JP
Japan
Prior art keywords
heat
metal plate
insulating film
metallic plate
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58183725A
Other languages
Japanese (ja)
Inventor
Toshiaki Tanaka
利明 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SAAMOBONITSUKU KK
Thermovonics Co Ltd
Original Assignee
SAAMOBONITSUKU KK
Thermovonics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SAAMOBONITSUKU KK, Thermovonics Co Ltd filed Critical SAAMOBONITSUKU KK
Priority to JP58183725A priority Critical patent/JPS6076179A/en
Publication of JPS6076179A publication Critical patent/JPS6076179A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

PURPOSE:To enable effective heat absorption and radiation while obtaining electric insulation as well as to facilitate installation by arranging a multiplicity of semiconductor elements for thermoelectric conversion between a pair of heat absorbing and heat radiating plates, each of the elements being adhered at one end to each of the electrode foils facing to each other. CONSTITUTION:When a DC power supply is connected, a metallic plate 1 is cooled and a metallic plate 2 is heated. On the other hand, when the power supply is connected reversely, the metallic plate 1 is heated while the metallic plate 2 is cooled. Further, when a load instead of the power supply 31 is connected between terminals 27 and 28 so as to heat or cool the metallic plate 1 and to cool or heat the metallic plate 2, a predetermined power can be supplied to the load. Accordingly, in the operation of this thermoelectric converter as mentioned above, the metallic plate 1 and 2 holding semiconductor elements 25 and 26 can function more efficiently as heat absorbing or heat radiating plates than conventional holding plates of ceramic or the like, whereby heating/cooling and electricity generation can be performed efficiently.

Description

【発明の詳細な説明】 本発明は多数の熱電変換用の半導体素子を有した熱雷変
換装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thermal lightning conversion device having a large number of semiconductor elements for thermoelectric conversion.

熱雷変換用のN型半導体素子とP型半導体装置とを電気
的に直列に接続してなる熱雷変換素子を更に電気的に直
列に接続して所望の吸熱・発熱作用又は電力を得るよう
にした熱雷変換装置においては、これら多数の熱電変換
素子をしっかりと保持して固定する保持部材、1−なわ
ち保持板を必要とする。このような保持板としては、従
来では例えばアルミナの焼結体からなるセラミック板が
用いられている。ところでこの保持板では、それ自体に
よって熱雷変換素子と他の取付部材との間の電気的絶縁
を行い得るが、その熱伝導率が0.2ないし0.3W/
cm・℃程度の低い値であるため、所定の機械的強度が
得られるようにすると吸熱、放熱を効果的に行うことが
困難であり、加えて比較的もろい故に、熱歪により割れ
が生じたりするため、急冷、急加熱されるようなものに
は使用し難く、それ程満足し得るものではない。
A thermal lightning conversion element formed by electrically connecting an N-type semiconductor element for thermal lightning conversion and a P-type semiconductor device in series is further electrically connected in series to obtain a desired heat absorption/heat generation effect or electric power. The thermoelectric conversion device requires a holding member 1, that is, a holding plate, to firmly hold and fix the large number of thermoelectric conversion elements. As such a holding plate, a ceramic plate made of a sintered body of alumina, for example, has conventionally been used. By the way, this holding plate itself can provide electrical insulation between the thermal lightning conversion element and other mounting members, but its thermal conductivity is 0.2 to 0.3 W/
Since the value is as low as cm/°C, it is difficult to effectively absorb and dissipate heat to obtain a specified mechanical strength.In addition, since it is relatively brittle, cracks may occur due to thermal strain. Therefore, it is difficult to use it for things that are rapidly cooled or heated, and it is not very satisfactory.

本発明は前記諸点に鑑みなされたものであり、その目的
と覆るところは、吸熱、放熱を効果的に行い得ると共に
同時に他の部材との電気的絶縁を達成し得、熱源、放熱
源への取り付t−1を容易に行い得、加えて機械的な強
度をも十分に得られ熱歪による割れ等が生じない熱雷変
換装置を提供することにある。
The present invention has been made in view of the above points, and its purpose is to effectively absorb and radiate heat, and at the same time, to achieve electrical insulation from other members, and to provide insulation to heat sources and heat radiation sources. It is an object of the present invention to provide a thermal lightning conversion device that can be easily installed (t-1), has sufficient mechanical strength, and does not crack due to thermal strain.

本発明ににれば前記目的は、高熱伝導率を有すると共に
所望の機械的強度を有する金属板と、この金属板の一方
の面を電気的に絶縁すべく、この金属板の一方の面に接
着されており、比較的高熱伝導率を有する絶縁膜ど、互
いに分離されてこの絶縁膜に接着された多数の電極箔と
から夫々がなる一対の吸熱・放熱板の間に、多数の熱雷
変換用の半導体素子の夫々が、互いに対面する前記電極
箔の夫々に一端面で接着されて配置されてなる熱雷変換
装置により達成される。
According to the present invention, the object is to provide a metal plate having high thermal conductivity and a desired mechanical strength, and to electrically insulate one side of the metal plate. An insulating film is bonded to the insulating film and has a relatively high thermal conductivity, and a large number of electrode foils are separated from each other and bonded to this insulating film. This is achieved by a thermal lightning conversion device in which each of the semiconductor elements is arranged with one end surface adhered to each of the electrode foils facing each other.

本発明による熱電変換装置では、金属板が実質的に保持
板として機能Jる故に、熱抵抗を小さくし1q、吸熱、
放熱効果を満足し得る程度に得ることかできる。その上
金属板であるため、比較的延性に優れ、よって熱歪等に
よって割れが生じる等の事故をなりシ17、加えて絶縁
膜の可撓性と相俟って種々の形状に変形し得る結果、平
板状、角柱状、円筒状、球状等の種々の形状の熱雷変換
装置を提供し得る。
In the thermoelectric conversion device according to the present invention, since the metal plate substantially functions as a holding plate, the thermal resistance can be reduced by 1q, heat absorption,
A satisfactory heat dissipation effect can be obtained. Furthermore, since it is a metal plate, it has relatively good ductility, which prevents accidents such as cracking due to thermal strain, etc. 17 In addition, combined with the flexibility of the insulating film, it can be deformed into various shapes. As a result, it is possible to provide thermal lightning conversion devices in various shapes such as flat, prismatic, cylindrical, and spherical.

本発明の金属板としては、鉄、好ましくは、アルミニウ
ム、銅又はこれらの合金等を用いることができ、軽量化
を翳する場合にはアルミニウム又はこれの合金が好まし
い。また金属板の厚みは、熱時定数、機械的強度の観点
から種々の値を採用し得、好ましい具体例ではこの1g
さは、0.51IIl〜2ml0であり、吸熱、放熱特
性を向上さμるべく、絶縁膜が形成される面と反対の面
に多数の吸熱フィン、放熱フィンを一体的又は別体で設
番ノでもよく、このようにフィンを設けると金属板の機
械的強度が増し、薄い金属板でも具体化し得ると同時に
実質的な熱時定数を小iくしm、好ましい特性を得るこ
とかできる。
As the metal plate of the present invention, iron, preferably aluminum, copper, or an alloy thereof can be used, and when weight reduction is desired, aluminum or an alloy thereof is preferable. Further, the thickness of the metal plate can be set to various values from the viewpoint of thermal time constant and mechanical strength, and in a preferred example, the thickness is 1 g.
The size is 0.51IIl to 2ml0, and in order to improve heat absorption and heat radiation characteristics, a large number of heat absorption fins and heat radiation fins are installed integrally or separately on the surface opposite to the surface on which the insulating film is formed. Providing the fins in this manner increases the mechanical strength of the metal plate, allows implementation of a thin metal plate, and at the same time reduces the substantial thermal time constant, thereby achieving desirable characteristics.

本発明の熱電変換装置にtjGノる絶縁膜どしては、好
ましくは耐熱性に優れたポリイミド樹脂、特に好ましく
はデュポン社製のケブトン(商品名)がよい。この絶縁
膜すなわちフィルムは熱伝尋性の観点からできるだけ薄
く形成するのがよいが、一つの具体例では約20μm程
度の値とされる。前記クブトンの熱伝導率は0.24 
xlOW/cm・℃程度であり、厚みが20μm程度の
場合にはこの程度の熱伝導率でも十分に初JIJの目的
を達成し得る。
The insulating film used in the thermoelectric conversion device of the present invention is preferably made of polyimide resin having excellent heat resistance, particularly preferably Kebuton (trade name) manufactured by DuPont. This insulating film, ie, film, is preferably formed as thin as possible from the viewpoint of thermal conductivity, and in one specific example, the thickness is about 20 μm. The thermal conductivity of the Kubuton is 0.24
The thermal conductivity is approximately xlOW/cm·°C, and when the thickness is approximately 20 μm, the purpose of the initial JIJ can be sufficiently achieved even with this level of thermal conductivity.

尚、耐熱性を有している他の樹脂をも使用し得、必要に
応じて高熱伝導性のフィラー材を樹脂に混入して耐熱性
に加えて高熱伝導性を得るにうにしt’ G J、く、
フィラー材としては例えばアルミナ等を用いることがで
きる。このような絶縁膜を金属板に接着する場合、耐熱
性のエポ4ニジ樹脂からなる接着剤を用いて行うとよい
。この接着剤には、絶縁膜と同様に、熱伝導を良くする
ためにアルミナ等のフィラー祠を混入してもよく、これ
により1xlOW/cm・℃程度の熱伝導率を得ること
ができる。一つの好ましい具体例では接着剤層の厚みは
40μm程度である。
Note that other resins having heat resistance may also be used, and if necessary, a filler material with high thermal conductivity may be mixed into the resin to obtain high thermal conductivity in addition to heat resistance. J, Ku,
For example, alumina or the like can be used as the filler material. When adhering such an insulating film to a metal plate, it is preferable to use an adhesive made of heat-resistant Epo-4 resin. Similar to the insulating film, filler such as alumina may be mixed into this adhesive to improve heat conduction, and thereby a thermal conductivity of about 1xlOW/cm.degree. C. can be obtained. In one preferred embodiment, the thickness of the adhesive layer is approximately 40 μm.

本発明の電極箔としては、銅、ニッケル、スズ等を好ま
しく用いることができ、これらの金属からなる箔すなわ
ちフィルムが絶縁膜に接着剤により接着されて電極箔が
形成されている。好ましい−具体例ではこの電極箔は厚
み100μ…の銅箔から形成されている。電極箔と絶縁
膜との接着は前述の接着剤を同様に適用−4るとよく、
この接着剤の層の厚みも、一つの具体例では40μm程
度である。
Copper, nickel, tin, etc. can be preferably used as the electrode foil of the present invention, and the electrode foil is formed by adhering a foil or film made of these metals to an insulating film with an adhesive. In a preferred embodiment, this electrode foil is formed from a copper foil having a thickness of 100 .mu.m. For adhesion between the electrode foil and the insulating film, it is best to apply the adhesive described above in the same way.
The thickness of this adhesive layer is also about 40 μm in one specific example.

互いに分離された電極箔を(9るためには、いわゆるプ
リント基板のパターン製造技術を適用し得る。すなわち
、絶縁膜の一方の面全体を覆って例えば銅箔を接着し、
その後エツヂング処理をこの銅箔に施して不必要な銅箔
を除去し、互いに分離された電極箔を形成する。
In order to separate the electrode foils from each other, a so-called printed circuit board pattern manufacturing technique can be applied. That is, for example, a copper foil is bonded to cover the entire surface of one side of the insulating film.
Thereafter, the copper foil is etched to remove unnecessary copper foil and form electrode foils separated from each other.

本発明にお番)る半導体素子は、結晶又は焼結半導体か
らなり、直列接続の場合には、P型半導体素子とN型半
導体素子とが交互に配列されて電極箔にそれぞれ一端面
で電気的に接続される。電極箔と半導体素子どの電気的
な接続には、ハンダが用いられる。
The semiconductor element according to the present invention is made of a crystal or sintered semiconductor, and in the case of series connection, P-type semiconductor elements and N-type semiconductor elements are arranged alternately and electrically connected to the electrode foil at one end surface. connected. Solder is used for electrical connection between electrode foil and semiconductor elements.

以下本発明を、図面に示す好ましい具体例を用いてより
詳細に説明する。
The present invention will be explained in more detail below using preferred specific examples shown in the drawings.

図において、アルミ製の一対の金属板1及び2の夫々対
向する一方の面3及び4には、比較的熱伝導率の高いポ
リイミド樹脂のフィルムからなる絶縁l!!5及び6が
接着されている。金属板1と絶縁膜5との間の接着剤層
7の厚み8は約40μmであり、金属板2と絶縁膜6と
の間の接着剤層9の厚み10も同程度である。層7及び
9を形成する接着剤としてはアルミナが混入された。耐
熱エポキシ樹脂が適用されている。尚、金属板1及び2
の厚み11及び12は本具体例では夫々1mll1であ
り、絶縁膜5及び6の厚み13及び14は約20μmで
ある。絶縁膜5及び6の夫々の一方の面15及び16に
は、互いに分離された多数の電極箔11及び18が接着
されており、銅製の電極箔17及び18の厚み19及び
20は夫々的100μmである。電極箔17及び18と
絶縁膜5及び6との夫々の間には、接着剤層7及び9ど
同様の接着剤層21及び22が介在している。絶縁膜5
及び6により電極箔11及び18は夫々金属板1及び2
から電気的に絶縁されている。このように金属板1、絶
縁膜5及び電極箔11からなる一方の吸熱・放熱板23
と金属板2、絶縁膜6及び電極箔18からなる他方の吸
熱・放熱板24との間には、熱電変換用のP型半シ9体
素子25どN型半導体素子26とが交互に配置されてJ
3す、半導体素子25及び26は人々一端面で互いに体
面する電極11及び18にハンダ付けにより接着されて
おり、端子21及び28間で交Hに配置された半導体素
子25及び26は電気的に直列に接続されている。
In the figure, on one side 3 and 4 of a pair of metal plates 1 and 2 made of aluminum, which face each other, are insulated with a polyimide resin film having relatively high thermal conductivity. ! 5 and 6 are glued together. The thickness 8 of the adhesive layer 7 between the metal plate 1 and the insulating film 5 is about 40 μm, and the thickness 10 of the adhesive layer 9 between the metal plate 2 and the insulating film 6 is also about the same. Alumina was incorporated as adhesive forming layers 7 and 9. Heat-resistant epoxy resin is applied. In addition, metal plates 1 and 2
In this specific example, the thicknesses 11 and 12 of the insulating films 5 and 6 are each 1 ml1, and the thicknesses 13 and 14 of the insulating films 5 and 6 are about 20 μm. A large number of electrode foils 11 and 18 separated from each other are adhered to one side 15 and 16 of each of the insulating films 5 and 6, and the thicknesses 19 and 20 of the copper electrode foils 17 and 18 are respectively 100 μm. It is. Adhesive layers 21 and 22 similar to adhesive layers 7 and 9 are interposed between electrode foils 17 and 18 and insulating films 5 and 6, respectively. Insulating film 5
and 6, electrode foils 11 and 18 are metal plates 1 and 2, respectively.
electrically isolated from In this way, one heat absorbing/heat dissipating plate 23 consisting of the metal plate 1, the insulating film 5 and the electrode foil 11
and the other heat absorbing/heat dissipating plate 24 made up of the metal plate 2, the insulating film 6, and the electrode foil 18, P-type half-semiconductor elements 25 and N-type semiconductor elements 26 for thermoelectric conversion are arranged alternately. Been J
3. The semiconductor elements 25 and 26 are soldered to the electrodes 11 and 18 facing each other at one end, and the semiconductor elements 25 and 26 arranged in alternation between the terminals 21 and 28 are electrically connected. connected in series.

以上のように構成された熱雷変換装置3oにおいて、直
流電源31を図示のように接続すると、金属板1側が冷
却され、金属板2側が発熱される一方、電源31を逆に
接続すると金属板1側が発熱され、金属板2側が冷却さ
れる。また電源31の代わりに端子21及び28問に負
荷を接続し、金属板1側を加熱又は冷iJJ L、金属
板2側を冷却又は加熱すると、負荷に所定の電力を供給
することができる。
In the thermal lightning converter 3o configured as described above, when the DC power source 31 is connected as shown, the metal plate 1 side is cooled and the metal plate 2 side is heated, whereas when the power source 31 is connected in the opposite direction, the metal plate The first side generates heat, and the metal plate 2 side cools. Further, by connecting a load to the terminals 21 and 28 instead of the power source 31, heating or cooling the metal plate 1 side, and cooling or heating the metal plate 2 side, a predetermined power can be supplied to the load.

従つ°C1このような熱電変換装置30の動作において
、半導体素子25及び20を保持する金属板1及び2が
セラミックス等の保持板と比較して効率のよい吸熱板又
は放熱板として機能し得るため、加熱冷却及び発電を効
果的に行い得る。
Accordingly, in the operation of such a thermoelectric conversion device 30, the metal plates 1 and 2 holding the semiconductor elements 25 and 20 can function as more efficient heat absorbing plates or heat sinks than holding plates made of ceramics or the like. Therefore, heating, cooling and power generation can be performed effectively.

次にこのような熱雷変換装置30の製造方法について説
明すると、まず、第3図に示すような金属板40の一方
の面に絶縁膜5又は6となる絶縁膜ずなわも絶縁フィル
ム41が接着され、この絶縁膜41の一方の面全体に銅
箔42が接着された板43を2枚準備し、次に銅箔42
に対してエツチング処理を施して不要部の銅箔42を除
去して吸熱・放熱板23又は24となる第4図に示すよ
うな板44を2枚得る。
Next, a method of manufacturing such a thermal lightning converter 30 will be explained. First, an insulating film 41, which will become the insulating film 5 or 6, is formed on one surface of a metal plate 40 as shown in FIG. Prepare two plates 43 with copper foil 42 bonded to the entire surface of one side of the insulating film 41, and then
An etching process is applied to remove unnecessary portions of the copper foil 42 to obtain two plates 44 as shown in FIG. 4, which serve as the heat absorbing/radiating plate 23 or 24.

尚、板44が得られた段階で重積17又は18となる銅
箔の表面に対してニラカルメッキを施すと、以後のハン
ダ付は工程を困難なしに行い得好ましい。
Incidentally, it is preferable to apply Niracal plating to the surface of the copper foil forming the stack 17 or 18 at the stage when the plate 44 is obtained, since the subsequent soldering process can be carried out without difficulty.

次に2枚の板44の銅箔の表面にスクリーンプリントに
よりハンダをプリントし、このハンダプリントされた一
方の板44の表面に、第5図に示すようにP型及びN型
半導体素子25及び26を載置し、その上に残る他方の
板44を載置し、両板44を互い向って押圧しながらハ
ンダの溶解温度まで加熱して半導体素子25&び26を
夫々銅箔に接着し、その後、冷n」すると熱電変換装置
30を得ることができる。
Next, solder is printed on the copper foil surfaces of the two plates 44 by screen printing, and the P-type and N-type semiconductor elements 25 and 26, and the remaining plate 44 is placed thereon, and while pressing both plates 44 toward each other, the semiconductor elements 25 and 26 are bonded to the copper foil by heating to the melting temperature of the solder. Thereafter, the thermoelectric conversion device 30 can be obtained by cooling.

前記の如く、本発明によれば、保持部材として金属板を
用いているため、吸熱、放熱を効率よく行いlE’Jる
上に、吸熱源、放熱源に簡単に取り付()られ得、加え
て、セラミックに比較して変形が容易であるため、種々
の形状の装置を得られ得る。
As described above, according to the present invention, since a metal plate is used as the holding member, it can efficiently absorb and dissipate heat, and can be easily attached to a heat absorption source and a heat dissipation source. In addition, it is easier to deform than ceramics, so devices of various shapes can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による好ましい一員体例の斜視図、第2
図は第1図に示す具体例の一部拡大説明図、第3図から
第5図は第1図に示す具体例の装置の製造方法の説明図
である。 1.2・・・金属板 5.6・・・絶縁膜17、18・
・・電極箔 25.26・・・半導体装置第2図 第3図 3 第4図
FIG. 1 is a perspective view of a preferred example of one piece according to the present invention;
The figure is a partially enlarged explanatory diagram of the specific example shown in FIG. 1, and FIGS. 3 to 5 are explanatory diagrams of a method of manufacturing the specific example device shown in FIG. 1.2... Metal plate 5.6... Insulating film 17, 18.
...Electrode foil 25.26...Semiconductor device Fig. 2 Fig. 3 Fig. 4

Claims (1)

【特許請求の範囲】 (1) 高熱伝導率を有すると共に所望の機械的強度を
有づる金属板と、この金属板の一方の面を電気的に絶縁
ジべく、この金属板の一方の面に接着されており、比較
的高熱伝導率を右する絶縁膜と、互いに分離されてこの
絶縁膜に接着された多数の電極箔とから夫々がなる一対
の吸熱・放熱板の間に、多数の熱雷変換用の半導体素子
の夫々が、互いに対rK1iする前記電極箔の夫々に一
端面で接着されて配置されてなる熱電変換装置。 (2・) 金属板はアルミニウムからなる特許請求の範
囲第1項に記載の熱雷変換装置。 (3) 金属板は鉄からなる特許請求の範囲第1項に記
載の熱雷変換装置。 (4) 金属板は銅からなる特許請求の範囲第1項に記
載の熱電変換装置。 (5) 絶縁膜はポリイミド樹脂からなる特許請求の範
囲第1項から第4項のいずれかに記載の熱雷変換装置。 (6) 金属板と絶縁膜とは耐熱性1ポキシ樹脂からな
る接着剤により接着されている特許請求の範囲第1項か
ら第5項のいずれかに記載の熱雷変換装置。 (7) 絶縁膜ど電極箔とは耐熱性エポキシ樹脂からな
る接着剤により接着されている特許請求の範囲m I 
Jnから第6項のいずれかに記載の熱雷変換装置。
[Scope of Claims] (1) A metal plate having high thermal conductivity and desired mechanical strength, and one side of this metal plate to electrically insulate the other side of the metal plate. A large number of thermal lightning conversions occur between a pair of heat absorbing and heat dissipating plates, each consisting of an insulating film that is bonded and has a relatively high thermal conductivity, and a large number of electrode foils that are separated from each other and bonded to this insulating film. 1. A thermoelectric conversion device in which each of the semiconductor elements for use is bonded at one end surface to each of the electrode foils that are arranged in pairs rK1i to each other. (2.) The thermal lightning conversion device according to claim 1, wherein the metal plate is made of aluminum. (3) The thermal lightning conversion device according to claim 1, wherein the metal plate is made of iron. (4) The thermoelectric conversion device according to claim 1, wherein the metal plate is made of copper. (5) The thermal lightning conversion device according to any one of claims 1 to 4, wherein the insulating film is made of polyimide resin. (6) The thermal lightning conversion device according to any one of claims 1 to 5, wherein the metal plate and the insulating film are bonded together with an adhesive made of heat-resistant 1-poxy resin. (7) Claims m I that the insulating film and electrode foil are bonded by an adhesive made of heat-resistant epoxy resin.
6. The thermal lightning conversion device according to any one of items Jn to 6.
JP58183725A 1983-09-30 1983-09-30 Thermoelectric converter Pending JPS6076179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58183725A JPS6076179A (en) 1983-09-30 1983-09-30 Thermoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58183725A JPS6076179A (en) 1983-09-30 1983-09-30 Thermoelectric converter

Publications (1)

Publication Number Publication Date
JPS6076179A true JPS6076179A (en) 1985-04-30

Family

ID=16140868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58183725A Pending JPS6076179A (en) 1983-09-30 1983-09-30 Thermoelectric converter

Country Status (1)

Country Link
JP (1) JPS6076179A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62178555U (en) * 1986-04-30 1987-11-12
JPS62178554U (en) * 1986-04-30 1987-11-12
JPH01256180A (en) * 1988-04-05 1989-10-12 Mitsui Mining & Smelting Co Ltd Thermoelectric module and manufacture thereof
JPH0690030A (en) * 1992-09-08 1994-03-29 Agency Of Ind Science & Technol Thermo-element sheet

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62178555U (en) * 1986-04-30 1987-11-12
JPS62178554U (en) * 1986-04-30 1987-11-12
JPH01256180A (en) * 1988-04-05 1989-10-12 Mitsui Mining & Smelting Co Ltd Thermoelectric module and manufacture thereof
JPH0690030A (en) * 1992-09-08 1994-03-29 Agency Of Ind Science & Technol Thermo-element sheet

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