JPS6159533B2 - - Google Patents

Info

Publication number
JPS6159533B2
JPS6159533B2 JP10637678A JP10637678A JPS6159533B2 JP S6159533 B2 JPS6159533 B2 JP S6159533B2 JP 10637678 A JP10637678 A JP 10637678A JP 10637678 A JP10637678 A JP 10637678A JP S6159533 B2 JPS6159533 B2 JP S6159533B2
Authority
JP
Japan
Prior art keywords
conductive layer
transistor
emitter
electrode
negative feedback
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10637678A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5533073A (en
Inventor
Michio Irie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10637678A priority Critical patent/JPS5533073A/ja
Publication of JPS5533073A publication Critical patent/JPS5533073A/ja
Publication of JPS6159533B2 publication Critical patent/JPS6159533B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched

Landscapes

  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)
JP10637678A 1978-08-30 1978-08-30 High frequency transistor Granted JPS5533073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10637678A JPS5533073A (en) 1978-08-30 1978-08-30 High frequency transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10637678A JPS5533073A (en) 1978-08-30 1978-08-30 High frequency transistor

Publications (2)

Publication Number Publication Date
JPS5533073A JPS5533073A (en) 1980-03-08
JPS6159533B2 true JPS6159533B2 (enrdf_load_html_response) 1986-12-17

Family

ID=14431987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10637678A Granted JPS5533073A (en) 1978-08-30 1978-08-30 High frequency transistor

Country Status (1)

Country Link
JP (1) JPS5533073A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS646520Y2 (enrdf_load_html_response) * 1981-01-31 1989-02-20
JPS59165439A (ja) * 1983-03-09 1984-09-18 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JPS5533073A (en) 1980-03-08

Similar Documents

Publication Publication Date Title
US3864727A (en) Semiconductor device
JPH0514069A (ja) 高出力電界効果トランジスタ増幅器
JPS6159533B2 (enrdf_load_html_response)
JPS5892277A (ja) 電界効果トランジスタの製造方法
JPS6362339A (ja) 半導体装置
JPS588584B2 (ja) 高周波トランジスタ
JPS60181055U (ja) 半導体インピーダンス構造
US20030201113A1 (en) Lead-less semiconductor device with improved electrode pattern structure
JPH0249733Y2 (enrdf_load_html_response)
JPS6035247Y2 (ja) 半導体装置
JPS5840339B2 (ja) 高周波トランジスタ
JPS6146722U (ja) 3端子コンデンサ
JPS5929377Y2 (ja) 高周波高出力トランジスタ装置
JPS6133623Y2 (enrdf_load_html_response)
JPS605055B2 (ja) 半導体装置
JPH066600Y2 (ja) 高周波回路装置
JP2701644B2 (ja) 半導体装置
JPH0363315B2 (enrdf_load_html_response)
JPH0446501U (enrdf_load_html_response)
JPS6114671B2 (enrdf_load_html_response)
JPH02140969A (ja) 半導体集積回路装置
JPS61172376A (ja) 半導体装置
JPS6049693U (ja) 厚膜回路基板
JPS5861652A (ja) 半導体装置
JPS61244065A (ja) エミツタ接地型半導体装置