JPS6158997B2 - - Google Patents

Info

Publication number
JPS6158997B2
JPS6158997B2 JP55098897A JP9889780A JPS6158997B2 JP S6158997 B2 JPS6158997 B2 JP S6158997B2 JP 55098897 A JP55098897 A JP 55098897A JP 9889780 A JP9889780 A JP 9889780A JP S6158997 B2 JPS6158997 B2 JP S6158997B2
Authority
JP
Japan
Prior art keywords
semiconductor light
light emitting
emitting device
rod
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55098897A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5723285A (en
Inventor
Jun Oosawa
Jun Ishii
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9889780A priority Critical patent/JPS5723285A/ja
Publication of JPS5723285A publication Critical patent/JPS5723285A/ja
Publication of JPS6158997B2 publication Critical patent/JPS6158997B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

Landscapes

  • Led Device Packages (AREA)
JP9889780A 1980-07-18 1980-07-18 Manufacture of semiconductor light-emitting element Granted JPS5723285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9889780A JPS5723285A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9889780A JPS5723285A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor light-emitting element

Publications (2)

Publication Number Publication Date
JPS5723285A JPS5723285A (en) 1982-02-06
JPS6158997B2 true JPS6158997B2 (enrdf_load_stackoverflow) 1986-12-13

Family

ID=14231915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9889780A Granted JPS5723285A (en) 1980-07-18 1980-07-18 Manufacture of semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS5723285A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5249719B2 (enrdf_load_stackoverflow) * 1972-04-28 1977-12-19

Also Published As

Publication number Publication date
JPS5723285A (en) 1982-02-06

Similar Documents

Publication Publication Date Title
JPH0888431A (ja) 半導体レーザ装置及びその製造方法
KR100325910B1 (ko) 다람쥐 케이지형 유도 전동기의 로터 및 그 제조방법
EP0649202B1 (en) Semiconductor laser and method of manufacturing the same
JP4127426B2 (ja) チップ型半導体のパッケージ構造および製造方法
JPS6158997B2 (enrdf_load_stackoverflow)
US6879027B2 (en) Semiconductor device having bumps
JP2007227931A (ja) 高出力アレイ型半導体レーザー装置の製造方法
JPWO2023153476A5 (enrdf_load_stackoverflow)
JPH10229223A (ja) 熱電素子
JPH1168174A (ja) 熱電半導体チップ及び熱電モジュールの製造方法
KR100273113B1 (ko) 반도체용리드프레임
JPS6367337B2 (enrdf_load_stackoverflow)
JP2822496B2 (ja) プリント配線板へのリードピンの半田付け方法
JP2926885B2 (ja) 半導体レーザ
JPH0623011Y2 (ja) マルチビーム半導体レーザ装置
JPS6055687A (ja) 半導体レ−ザ
JPH0234945A (ja) ロウ付け方法
JPS60196992A (ja) 半導体レ−ザ装置
JPH0695519B2 (ja) バンプ形成方法
JPH09237941A (ja) 半導体レーザ装置の製造方法
JPH07254631A (ja) 電子回路装置およびその製造方法
JPS6152981A (ja) ロウ付け方法
JPH1051077A (ja) 半導体素子用アイレットとその製造方法
JPH071812Y2 (ja) マルチビーム半導体レーザ装置
JPH08139243A (ja) 半導体装置の製造方法