JPS6158982B2 - - Google Patents
Info
- Publication number
- JPS6158982B2 JPS6158982B2 JP52018465A JP1846577A JPS6158982B2 JP S6158982 B2 JPS6158982 B2 JP S6158982B2 JP 52018465 A JP52018465 A JP 52018465A JP 1846577 A JP1846577 A JP 1846577A JP S6158982 B2 JPS6158982 B2 JP S6158982B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- bit line
- opposite conductivity
- storage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 11
- 238000005036 potential barrier Methods 0.000 claims description 9
- 239000011159 matrix material Substances 0.000 claims description 7
- 238000009825 accumulation Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 230000006698 induction Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1846577A JPS53103330A (en) | 1977-02-21 | 1977-02-21 | Semiconductor memory |
| GB6699/78A GB1602361A (en) | 1977-02-21 | 1978-02-20 | Semiconductor memory devices |
| GB36296/80A GB1602362A (en) | 1977-02-21 | 1978-02-20 | Semiconductor memory devices |
| DE2807181A DE2807181C2 (de) | 1977-02-21 | 1978-02-20 | Halbleiterspeichervorrichtung |
| NL7801879A NL191683C (nl) | 1977-02-21 | 1978-02-20 | Halfgeleidergeheugenschakeling. |
| FR7804914A FR2381373B1 (fr) | 1977-02-21 | 1978-02-21 | Memoire semi-conductrice rapide, a grande densite |
| US06/174,724 US4434433A (en) | 1977-02-21 | 1980-08-04 | Enhancement mode JFET dynamic memory |
| US07/087,974 US4994999A (en) | 1977-02-21 | 1987-08-17 | High-speed and high-density semiconductor memory |
| US07/839,704 US5883406A (en) | 1977-02-21 | 1992-02-24 | High-speed and high-density semiconductor memory |
| NL9500518A NL9500518A (nl) | 1977-02-21 | 1995-03-16 | Halfgeleidergeheugenschakeling. |
| US08/465,014 US5808328A (en) | 1977-02-21 | 1995-06-05 | High-speed and high-density semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1846577A JPS53103330A (en) | 1977-02-21 | 1977-02-21 | Semiconductor memory |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58140128A Division JPS5946062A (ja) | 1983-07-30 | 1983-07-30 | 半導体メモリ |
| JP58140129A Division JPS59130474A (ja) | 1983-07-30 | 1983-07-30 | 不揮発性メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53103330A JPS53103330A (en) | 1978-09-08 |
| JPS6158982B2 true JPS6158982B2 (enrdf_load_stackoverflow) | 1986-12-13 |
Family
ID=11972375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1846577A Granted JPS53103330A (en) | 1977-02-21 | 1977-02-21 | Semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53103330A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57172773A (en) * | 1980-12-22 | 1982-10-23 | Texas Instruments Inc | Non-volatile high integrated jfetram cell |
-
1977
- 1977-02-21 JP JP1846577A patent/JPS53103330A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53103330A (en) | 1978-09-08 |
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