JPS6158981B2 - - Google Patents
Info
- Publication number
- JPS6158981B2 JPS6158981B2 JP55051374A JP5137480A JPS6158981B2 JP S6158981 B2 JPS6158981 B2 JP S6158981B2 JP 55051374 A JP55051374 A JP 55051374A JP 5137480 A JP5137480 A JP 5137480A JP S6158981 B2 JPS6158981 B2 JP S6158981B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- film
- region
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5137480A JPS56147468A (en) | 1980-04-17 | 1980-04-17 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5137480A JPS56147468A (en) | 1980-04-17 | 1980-04-17 | Manufacture of semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56147468A JPS56147468A (en) | 1981-11-16 |
| JPS6158981B2 true JPS6158981B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1986-12-13 |
Family
ID=12885162
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5137480A Granted JPS56147468A (en) | 1980-04-17 | 1980-04-17 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56147468A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63196379U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-06-08 | 1988-12-16 |
-
1980
- 1980-04-17 JP JP5137480A patent/JPS56147468A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63196379U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1987-06-08 | 1988-12-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56147468A (en) | 1981-11-16 |