JPS6158969B2 - - Google Patents
Info
- Publication number
- JPS6158969B2 JPS6158969B2 JP13086681A JP13086681A JPS6158969B2 JP S6158969 B2 JPS6158969 B2 JP S6158969B2 JP 13086681 A JP13086681 A JP 13086681A JP 13086681 A JP13086681 A JP 13086681A JP S6158969 B2 JPS6158969 B2 JP S6158969B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- molecular beam
- phosphorus
- beam source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13086681A JPS5833823A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13086681A JPS5833823A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5833823A JPS5833823A (ja) | 1983-02-28 |
| JPS6158969B2 true JPS6158969B2 (cg-RX-API-DMAC7.html) | 1986-12-13 |
Family
ID=15044525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13086681A Granted JPS5833823A (ja) | 1981-08-22 | 1981-08-22 | 分子線エピタキシヤル成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5833823A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016046444A (ja) * | 2014-08-25 | 2016-04-04 | シャープ株式会社 | 成膜・分析複合装置、成膜・分析複合装置の制御方法、および真空チャンバ |
-
1981
- 1981-08-22 JP JP13086681A patent/JPS5833823A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5833823A (ja) | 1983-02-28 |
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