JPS5833823A - 分子線エピタキシヤル成長装置 - Google Patents

分子線エピタキシヤル成長装置

Info

Publication number
JPS5833823A
JPS5833823A JP13086681A JP13086681A JPS5833823A JP S5833823 A JPS5833823 A JP S5833823A JP 13086681 A JP13086681 A JP 13086681A JP 13086681 A JP13086681 A JP 13086681A JP S5833823 A JPS5833823 A JP S5833823A
Authority
JP
Japan
Prior art keywords
substrate
chamber
molecular beam
epitaxial growth
phosphorus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13086681A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158969B2 (cg-RX-API-DMAC7.html
Inventor
Hideo Sugiura
杉浦　英雄
Akinori Katsui
勝井　明憲
Zeio Kamimura
税男 上村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP13086681A priority Critical patent/JPS5833823A/ja
Publication of JPS5833823A publication Critical patent/JPS5833823A/ja
Publication of JPS6158969B2 publication Critical patent/JPS6158969B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP13086681A 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置 Granted JPS5833823A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13086681A JPS5833823A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13086681A JPS5833823A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Publications (2)

Publication Number Publication Date
JPS5833823A true JPS5833823A (ja) 1983-02-28
JPS6158969B2 JPS6158969B2 (cg-RX-API-DMAC7.html) 1986-12-13

Family

ID=15044525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13086681A Granted JPS5833823A (ja) 1981-08-22 1981-08-22 分子線エピタキシヤル成長装置

Country Status (1)

Country Link
JP (1) JPS5833823A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016046444A (ja) * 2014-08-25 2016-04-04 シャープ株式会社 成膜・分析複合装置、成膜・分析複合装置の制御方法、および真空チャンバ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016046444A (ja) * 2014-08-25 2016-04-04 シャープ株式会社 成膜・分析複合装置、成膜・分析複合装置の制御方法、および真空チャンバ

Also Published As

Publication number Publication date
JPS6158969B2 (cg-RX-API-DMAC7.html) 1986-12-13

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