JPS6158895A - 単結晶の育成装置 - Google Patents

単結晶の育成装置

Info

Publication number
JPS6158895A
JPS6158895A JP18243684A JP18243684A JPS6158895A JP S6158895 A JPS6158895 A JP S6158895A JP 18243684 A JP18243684 A JP 18243684A JP 18243684 A JP18243684 A JP 18243684A JP S6158895 A JPS6158895 A JP S6158895A
Authority
JP
Japan
Prior art keywords
crucible
single crystal
raw material
partition plate
material melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18243684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0223520B2 (enrdf_load_stackoverflow
Inventor
Minoru Nishizawa
西沢　実
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GAKEI DENKI SEISAKUSHO KK
Original Assignee
GAKEI DENKI SEISAKUSHO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GAKEI DENKI SEISAKUSHO KK filed Critical GAKEI DENKI SEISAKUSHO KK
Priority to JP18243684A priority Critical patent/JPS6158895A/ja
Priority to EP84111305A priority patent/EP0173764B1/en
Priority to DE8484111305T priority patent/DE3480721D1/de
Priority to US06/675,409 priority patent/US4874458A/en
Publication of JPS6158895A publication Critical patent/JPS6158895A/ja
Priority to US07/102,373 priority patent/US4832922A/en
Publication of JPH0223520B2 publication Critical patent/JPH0223520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP18243684A 1984-08-31 1984-08-31 単結晶の育成装置 Granted JPS6158895A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP18243684A JPS6158895A (ja) 1984-08-31 1984-08-31 単結晶の育成装置
EP84111305A EP0173764B1 (en) 1984-08-31 1984-09-21 Single crystal growing method and apparatus
DE8484111305T DE3480721D1 (de) 1984-08-31 1984-09-21 Verfahren und vorrichtung zur herstellung von einkristallen.
US06/675,409 US4874458A (en) 1984-08-31 1984-11-27 Single crystal growing method having improved melt control
US07/102,373 US4832922A (en) 1984-08-31 1987-09-29 Single crystal growing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18243684A JPS6158895A (ja) 1984-08-31 1984-08-31 単結晶の育成装置

Publications (2)

Publication Number Publication Date
JPS6158895A true JPS6158895A (ja) 1986-03-26
JPH0223520B2 JPH0223520B2 (enrdf_load_stackoverflow) 1990-05-24

Family

ID=16118233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18243684A Granted JPS6158895A (ja) 1984-08-31 1984-08-31 単結晶の育成装置

Country Status (1)

Country Link
JP (1) JPS6158895A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63270391A (ja) * 1987-04-27 1988-11-08 Sumitomo Electric Ind Ltd Ｌｅｃ法による単結晶引き上げ方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182435A (ja) * 1983-03-31 1984-10-17 Mita Ind Co Ltd 複写機の原稿押圧装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59182435A (ja) * 1983-03-31 1984-10-17 Mita Ind Co Ltd 複写機の原稿押圧装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63270391A (ja) * 1987-04-27 1988-11-08 Sumitomo Electric Ind Ltd Ｌｅｃ法による単結晶引き上げ方法

Also Published As

Publication number Publication date
JPH0223520B2 (enrdf_load_stackoverflow) 1990-05-24

Similar Documents

Publication Publication Date Title
KR102374317B1 (ko) 산화갈륨 결정의 제조 장치 및 산화갈륨 결정의 제조 방법
JP5005651B2 (ja) 炭素ドーピング、抵抗率制御、温度勾配制御を伴う、剛性サポートを備える半導体結晶を成長させるための方法および装置
US4874458A (en) Single crystal growing method having improved melt control
US4650540A (en) Methods and apparatus for producing coherent or monolithic elements
US5047113A (en) Method for directional solidification of single crystals
JPS6158895A (ja) 単結晶の育成装置
US4784715A (en) Methods and apparatus for producing coherent or monolithic elements
JP2020105069A (ja) 酸化ガリウム結晶の製造装置および酸化ガリウム結晶の製造方法
CN1062317C (zh) 垂直温梯法生长铝酸锂和镓酸锂晶体
JPH0570276A (ja) 単結晶の製造装置
JPH0223519B2 (enrdf_load_stackoverflow)
JPS60122791A (ja) 液体封止結晶引上方法
KR101956754B1 (ko) GaAs 단결정 성장 장치
JP4316183B2 (ja) 単結晶の育成方法
JPH03103386A (ja) 半導体単結晶製造装置
JPH0782088A (ja) 単結晶の育成方法
JPH08290991A (ja) 化合物半導体単結晶の成長方法
JPH061692A (ja) 化合物半導体単結晶の製造装置
JPH10101499A (ja) 結晶成長方法及びその装置
JPH05339094A (ja) 酸化物単結晶の製造装置
JPS5957992A (ja) 化合物半導体単結晶の製造方法
JPH01145395A (ja) 化合物半導体単結晶の製造方法
JPH01264989A (ja) 単結晶の育成装置
JPH0416599A (ja) ＺｎＳｅ単結晶の成長方法
JPS62223088A (ja) 化合物単結晶の育成方法