JPS6154265B2 - - Google Patents

Info

Publication number
JPS6154265B2
JPS6154265B2 JP54137008A JP13700879A JPS6154265B2 JP S6154265 B2 JPS6154265 B2 JP S6154265B2 JP 54137008 A JP54137008 A JP 54137008A JP 13700879 A JP13700879 A JP 13700879A JP S6154265 B2 JPS6154265 B2 JP S6154265B2
Authority
JP
Japan
Prior art keywords
layer
insulating film
etching
gaas
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54137008A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5661169A (en
Inventor
Yasuhiro Ishii
Noryuki Shimano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13700879A priority Critical patent/JPS5661169A/ja
Publication of JPS5661169A publication Critical patent/JPS5661169A/ja
Publication of JPS6154265B2 publication Critical patent/JPS6154265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP13700879A 1979-10-25 1979-10-25 Preparation of compound semiconductor device Granted JPS5661169A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13700879A JPS5661169A (en) 1979-10-25 1979-10-25 Preparation of compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13700879A JPS5661169A (en) 1979-10-25 1979-10-25 Preparation of compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS5661169A JPS5661169A (en) 1981-05-26
JPS6154265B2 true JPS6154265B2 (enrdf_load_stackoverflow) 1986-11-21

Family

ID=15188645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13700879A Granted JPS5661169A (en) 1979-10-25 1979-10-25 Preparation of compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS5661169A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02154147A (ja) * 1988-12-06 1990-06-13 Hitachi Constr Mach Co Ltd 超音波探触子

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998559A (ja) * 1982-11-27 1984-06-06 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS6037784A (ja) * 1983-08-10 1985-02-27 Matsushita Electric Ind Co Ltd 電界効果型トランジスタ
JPS63276230A (ja) * 1987-05-08 1988-11-14 Mitsubishi Electric Corp 半導体装置の製造方法
JPH04260338A (ja) * 1991-02-14 1992-09-16 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02154147A (ja) * 1988-12-06 1990-06-13 Hitachi Constr Mach Co Ltd 超音波探触子

Also Published As

Publication number Publication date
JPS5661169A (en) 1981-05-26

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