JPS6153870B2 - - Google Patents
Info
- Publication number
- JPS6153870B2 JPS6153870B2 JP5310678A JP5310678A JPS6153870B2 JP S6153870 B2 JPS6153870 B2 JP S6153870B2 JP 5310678 A JP5310678 A JP 5310678A JP 5310678 A JP5310678 A JP 5310678A JP S6153870 B2 JPS6153870 B2 JP S6153870B2
- Authority
- JP
- Japan
- Prior art keywords
- strain
- metal
- displacement transducer
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 106
- 239000002184 metal Substances 0.000 claims description 106
- 238000006073 displacement reaction Methods 0.000 claims description 52
- 229910000679 solder Inorganic materials 0.000 claims description 49
- 239000000654 additive Substances 0.000 claims description 40
- 230000000996 additive effect Effects 0.000 claims description 40
- 239000000956 alloy Substances 0.000 claims description 39
- 229910045601 alloy Inorganic materials 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 33
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 229910017401 Au—Ge Inorganic materials 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910002482 Cu–Ni Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910017709 Ni Co Inorganic materials 0.000 claims 1
- 229910003267 Ni-Co Inorganic materials 0.000 claims 1
- 229910003262 Ni‐Co Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 63
- 239000000853 adhesive Substances 0.000 description 23
- 230000001070 adhesive effect Effects 0.000 description 23
- 239000012790 adhesive layer Substances 0.000 description 21
- 230000000694 effects Effects 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910015367 Au—Sb Inorganic materials 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5310678A JPS54144891A (en) | 1978-05-02 | 1978-05-02 | Displacement converter of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5310678A JPS54144891A (en) | 1978-05-02 | 1978-05-02 | Displacement converter of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54144891A JPS54144891A (en) | 1979-11-12 |
JPS6153870B2 true JPS6153870B2 (el) | 1986-11-19 |
Family
ID=12933530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5310678A Granted JPS54144891A (en) | 1978-05-02 | 1978-05-02 | Displacement converter of semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54144891A (el) |
-
1978
- 1978-05-02 JP JP5310678A patent/JPS54144891A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS54144891A (en) | 1979-11-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4908685A (en) | Magnetoelectric transducer | |
JPS6128235B2 (el) | ||
US4319397A (en) | Method of producing semiconductor displacement transducer | |
US4042951A (en) | Gold-germanium alloy contacts for a semiconductor device | |
US4151502A (en) | Semiconductor transducer | |
EP0880801B1 (en) | DIE ATTACHED SiC AND DIE ATTACH PROCEDURE FOR SiC | |
US4513905A (en) | Integrated circuit metallization technique | |
US4309687A (en) | Resistance strain gauge | |
JP3601722B2 (ja) | ダイボンド用ハンダ材 | |
GB2138633A (en) | Bonding semiconductor chips to a lead frame | |
JPS6154272B2 (el) | ||
JPS6153870B2 (el) | ||
JPS5926608Y2 (ja) | 半導体変位変換器 | |
JPS6222469B2 (el) | ||
US4659378A (en) | Solderable adhesive layer | |
JPS5928070B2 (ja) | 半導体変位変換器 | |
JP3751392B2 (ja) | 半導体素子の電極構造およびその製造方法 | |
JPH06176903A (ja) | Cr系サーメット薄膜の電極構造 | |
JPS5810868B2 (ja) | 半導体歪変換器 | |
JPS5936425B2 (ja) | 中間層を有するリ−ドフレ−ム構造 | |
JPS582466B2 (ja) | 半導体変位変換器 | |
US3353073A (en) | Magnesium-aluminum alloy contacts for semiconductor devices | |
JPH0467346B2 (el) | ||
JP2000241274A (ja) | 半導体圧力センサの部品、半導体圧力センサおよびその製造方法 | |
JP2000162068A (ja) | 半導体圧力センサの構造 |