JPS6147668A - 耐交番負荷性のスイツチング動作可能な半導体素子 - Google Patents

耐交番負荷性のスイツチング動作可能な半導体素子

Info

Publication number
JPS6147668A
JPS6147668A JP60124430A JP12443085A JPS6147668A JP S6147668 A JPS6147668 A JP S6147668A JP 60124430 A JP60124430 A JP 60124430A JP 12443085 A JP12443085 A JP 12443085A JP S6147668 A JPS6147668 A JP S6147668A
Authority
JP
Japan
Prior art keywords
semiconductor
contact
semiconductor device
insulator
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60124430A
Other languages
English (en)
Japanese (ja)
Inventor
ヴインフリート　シエルツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMIKURON G fur GURAIHIRIHITAA
Semikuron G fur Guraihirihitaabau & Erekutonitsuku Mbh
Original Assignee
SEMIKURON G fur GURAIHIRIHITAA
Semikuron G fur Guraihirihitaabau & Erekutonitsuku Mbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMIKURON G fur GURAIHIRIHITAA, Semikuron G fur Guraihirihitaabau & Erekutonitsuku Mbh filed Critical SEMIKURON G fur GURAIHIRIHITAA
Publication of JPS6147668A publication Critical patent/JPS6147668A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/13—Containers comprising a conductive base serving as an interconnection
    • H10W76/138—Containers comprising a conductive base serving as an interconnection having another interconnection being formed by a cover plate parallel to the conductive base, e.g. sandwich type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP60124430A 1984-06-09 1985-06-10 耐交番負荷性のスイツチング動作可能な半導体素子 Pending JPS6147668A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19843421672 DE3421672A1 (de) 1984-06-09 1984-06-09 Wechsellastbestaendiges, schaltbares halbleiterbauelement
DE3421672.3 1984-06-09

Publications (1)

Publication Number Publication Date
JPS6147668A true JPS6147668A (ja) 1986-03-08

Family

ID=6238106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60124430A Pending JPS6147668A (ja) 1984-06-09 1985-06-10 耐交番負荷性のスイツチング動作可能な半導体素子

Country Status (4)

Country Link
US (1) US4734755A (https=)
EP (1) EP0169356B1 (https=)
JP (1) JPS6147668A (https=)
DE (1) DE3421672A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017563B4 (de) * 2010-04-27 2015-10-22 Mitsubishi Electric Corp. Druckkontakthalbleitervorrichtung

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3736671C1 (en) * 1987-10-29 1989-06-08 Semikron Elektronik Gmbh Method for producing semiconductor components
DE4132947C2 (de) * 1991-10-04 1998-11-26 Export Contor Ausenhandelsgese Elektronische Schaltungsanordnung
DE19638090C2 (de) * 1996-09-18 2001-11-29 Infineon Technologies Ag Stromanschluß für Leistungshalbleiterbauelement
DE19651632C2 (de) * 1996-12-12 2000-12-14 Semikron Elektronik Gmbh Leistungshalbleitermodul
SE512906C2 (sv) * 1998-10-02 2000-06-05 Ericsson Telefon Ab L M Förfarande vid lödning av ett halvledarchip samt RF-power transistor för genomförande därav
KR100499722B1 (ko) * 2000-02-29 2005-07-07 오므론 가부시키가이샤 칩형 반도체 소자
DE10065495C2 (de) * 2000-12-28 2002-11-14 Semikron Elektronik Gmbh Leistungshalbleitermodul
DE10122837B4 (de) * 2001-05-11 2006-06-22 Ixys Semiconductor Gmbh Leistungshalbleiter-Modul
US6803667B2 (en) * 2001-08-09 2004-10-12 Denso Corporation Semiconductor device having a protective film
JP2004304604A (ja) * 2003-03-31 2004-10-28 Mitsumi Electric Co Ltd 小型カメラモジュールのソケットへの取付け構造
US20060038302A1 (en) * 2004-08-19 2006-02-23 Kejun Zeng Thermal fatigue resistant tin-lead-silver solder
CN103390642B (zh) * 2013-08-01 2016-06-22 株洲南车时代电气股份有限公司 一种igbt器件及整晶圆igbt芯片的封装方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121557B1 (https=) * 1970-12-30 1976-07-03
JPS51135465A (en) * 1975-05-20 1976-11-24 Mitsubishi Electric Corp Semi-conductor unit
JPS5750439A (en) * 1980-09-12 1982-03-24 Hitachi Ltd Semiconductor device

Family Cites Families (26)

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Publication number Priority date Publication date Assignee Title
BE512559A (https=) * 1951-06-08 1900-01-01
US2863105A (en) * 1955-11-10 1958-12-02 Hoffman Electronics Corp Rectifying device
NL291270A (https=) * 1961-08-12
NL286498A (https=) * 1961-12-30 1900-01-01
US3265805A (en) * 1964-02-03 1966-08-09 Power Components Inc Semiconductor power device
DE1614603B2 (de) * 1967-09-16 1975-09-25 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Halbleiterbauelement
CH494471A (de) * 1967-11-09 1970-07-31 Ckd Praha Halbleiterbauelement
US3599057A (en) * 1969-02-03 1971-08-10 Gen Electric Semiconductor device with a resilient lead construction
DE2014289A1 (de) * 1970-03-25 1971-10-14 Semikron Gleichrichterbau Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung
US3800192A (en) * 1970-08-11 1974-03-26 O Schaerli Semiconductor circuit element with pressure contact means
US3823350A (en) * 1973-09-05 1974-07-09 Atomic Energy Commission Protective carrier for semiconductor chips
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
DE2704914C2 (de) * 1977-02-05 1982-03-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Anordnung zum Kontaktieren eingehäuster Leistungs-Halbleiterbauelemente
DE2719400C2 (de) * 1977-04-30 1982-09-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Scheibenförmige Halbleiterzelle
GB1556397A (en) * 1978-05-06 1979-11-21 Aei Semiconductors Ltd High power semiconductor devices
DE2840400C2 (de) * 1978-09-16 1982-04-08 Brown, Boveri & Cie Ag, 6800 Mannheim Steuerbares Leistungs-Halbleiterbauelement
JPS5559744A (en) * 1978-10-27 1980-05-06 Mitsubishi Electric Corp Pressure welding type semiconductor device
SE429802B (sv) * 1979-02-21 1983-09-26 Asea Ab Halvledaranordning innefattande en tetande ringformad kropp av en sulfonpolymer eller av polyfenylensulfid
JPS55121654A (en) * 1979-03-13 1980-09-18 Toshiba Corp Compression bonded semiconductor device
JPS6028139B2 (ja) * 1979-04-06 1985-07-03 三菱電機株式会社 半導体装置
JPS5635443A (en) * 1979-08-31 1981-04-08 Toshiba Corp Semiconductor device
JPS56126952A (en) * 1980-03-12 1981-10-05 Hitachi Ltd Composite type semiconductor device
JPS57100737A (en) * 1980-12-16 1982-06-23 Toshiba Corp Semiconductor device
DE3308720A1 (de) * 1983-03-11 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement mit scheibenfoermigem gehaeuse
DE3308661A1 (de) * 1983-03-11 1984-09-20 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterelement
JPS60760A (ja) * 1983-06-16 1985-01-05 Hitachi Ltd レジンモ−ルド型半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121557B1 (https=) * 1970-12-30 1976-07-03
JPS51135465A (en) * 1975-05-20 1976-11-24 Mitsubishi Electric Corp Semi-conductor unit
JPS5750439A (en) * 1980-09-12 1982-03-24 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011017563B4 (de) * 2010-04-27 2015-10-22 Mitsubishi Electric Corp. Druckkontakthalbleitervorrichtung

Also Published As

Publication number Publication date
DE3421672A1 (de) 1985-12-12
DE3421672C2 (https=) 1988-01-28
US4734755A (en) 1988-03-29
EP0169356B1 (de) 1988-11-02
EP0169356A1 (de) 1986-01-29

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