JPS6147226B2 - - Google Patents
Info
- Publication number
- JPS6147226B2 JPS6147226B2 JP11394083A JP11394083A JPS6147226B2 JP S6147226 B2 JPS6147226 B2 JP S6147226B2 JP 11394083 A JP11394083 A JP 11394083A JP 11394083 A JP11394083 A JP 11394083A JP S6147226 B2 JPS6147226 B2 JP S6147226B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- silicon film
- frequency
- bias
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 26
- 239000001257 hydrogen Substances 0.000 claims description 22
- 229910052739 hydrogen Inorganic materials 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 20
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 30
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 monosilane ions Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11394083A JPS605881A (ja) | 1983-06-24 | 1983-06-24 | アモルフアスシリコン膜の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11394083A JPS605881A (ja) | 1983-06-24 | 1983-06-24 | アモルフアスシリコン膜の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605881A JPS605881A (ja) | 1985-01-12 |
| JPS6147226B2 true JPS6147226B2 (enExample) | 1986-10-17 |
Family
ID=14625008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11394083A Granted JPS605881A (ja) | 1983-06-24 | 1983-06-24 | アモルフアスシリコン膜の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605881A (enExample) |
-
1983
- 1983-06-24 JP JP11394083A patent/JPS605881A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS605881A (ja) | 1985-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4634601A (en) | Method for production of semiconductor by glow discharge decomposition of silane | |
| US4436761A (en) | Method for treatment of metal substrate for growth of hydrogen-containing semiconductor film | |
| JPS63197329A (ja) | プラズマ・チャンバー内で、無定形水素化シリコンを基板へ付着させる方法 | |
| JP3276346B2 (ja) | 放電電極、高周波プラズマ発生装置、給電方法および半導体製造方法 | |
| EP0727826B1 (en) | A method for forming a thin semiconductor film | |
| JPH05304103A (ja) | 低圧プラズマでサブストレートを処理する方法および装置 | |
| JPS6147226B2 (enExample) | ||
| EP0674335B1 (en) | Plasma processing method and plasma processing apparatus | |
| JPH0556648B2 (enExample) | ||
| JPS59227707A (ja) | アモルフアスシリコン膜の成長方法 | |
| Boulitrop et al. | A study of hydrogenated amorphous silicon deposited by hot‐wall glow discharge | |
| JPS63123900A (ja) | 結晶欠陥等の不活性化法 | |
| JP2011238747A (ja) | プラズマｃｖｄ成膜装置および高周波電圧の印加方法 | |
| EP0140130A2 (en) | Process and apparatus for preparing semiconductor layer | |
| Mejia et al. | The effects of deposition parameters on a-Si: H films fabricated by microwave glow discharge techniques | |
| Lu et al. | Control of microstructure in a‐SiC: H | |
| JPS5927214B2 (ja) | 気相成長装置 | |
| Lu et al. | A new method of depositing amorphous hydrogenated silicon carbide with low IR-detected microstructure | |
| JPH05308051A (ja) | 水素化アモルファスシリコン膜の製造方法及び装置 | |
| JPS6336521A (ja) | 非晶質薄膜の形成方法 | |
| JPH0719751B2 (ja) | 成膜方法 | |
| JP2009054844A (ja) | 真空処理装置、薄膜の製造方法、及び光電変換装置の製造方法 | |
| JPH01215982A (ja) | 膜形成装置 | |
| JPH1088358A (ja) | プラズマｃｖｄ法によるアモルファスシリコン系堆積膜の形成方法 | |
| Uchida | dc Glow Discharge |