JPS6145896B2 - - Google Patents
Info
- Publication number
- JPS6145896B2 JPS6145896B2 JP55024849A JP2484980A JPS6145896B2 JP S6145896 B2 JPS6145896 B2 JP S6145896B2 JP 55024849 A JP55024849 A JP 55024849A JP 2484980 A JP2484980 A JP 2484980A JP S6145896 B2 JPS6145896 B2 JP S6145896B2
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- gate
- circuit
- terminal
- control signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010304 firing Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Thyristor Switches And Gates (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2484980A JPS56121363A (en) | 1980-02-28 | 1980-02-28 | Gate circuit for thyristor |
DE8181300812T DE3164361D1 (en) | 1980-02-28 | 1981-02-26 | A gate circuit for a thyristor and a thyristor having such a gate circuit |
EP81300812A EP0035379B1 (en) | 1980-02-28 | 1981-02-26 | A gate circuit for a thyristor and a thyristor having such a gate circuit |
US06/238,605 US4417156A (en) | 1980-02-28 | 1981-02-26 | Gate circuit for thyristors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2484980A JPS56121363A (en) | 1980-02-28 | 1980-02-28 | Gate circuit for thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56121363A JPS56121363A (en) | 1981-09-24 |
JPS6145896B2 true JPS6145896B2 (US06312121-20011106-C00033.png) | 1986-10-11 |
Family
ID=12149656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2484980A Granted JPS56121363A (en) | 1980-02-28 | 1980-02-28 | Gate circuit for thyristor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4417156A (US06312121-20011106-C00033.png) |
EP (1) | EP0035379B1 (US06312121-20011106-C00033.png) |
JP (1) | JPS56121363A (US06312121-20011106-C00033.png) |
DE (1) | DE3164361D1 (US06312121-20011106-C00033.png) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60137126A (ja) * | 1983-12-26 | 1985-07-20 | Sanyo Denki Kk | ゲ−トタ−ンオフ・サイリスタのパルストランス方式オンゲ−ト制御装置 |
US4507569A (en) * | 1983-12-30 | 1985-03-26 | Conservolite, Inc. | Electrical control system and driver |
DE3405769A1 (de) * | 1984-02-17 | 1985-08-22 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum ansteuern des stromleitenden zustandes eines abschaltbaren thyristors |
FR2563393B1 (fr) * | 1984-04-20 | 1990-08-10 | Jeumont Schneider | Ensemble de commutation a semi-conducteur monodirectionnel en courant et bidirectionnel en tension a blocage commande et a amorcage spontane et graduateur capacitif |
EP0256426A1 (de) * | 1986-08-18 | 1988-02-24 | Siemens Aktiengesellschaft | Vorrichtung zur Aufrechterhaltung des sperrenden Schaltzustandes eines abschaltbaren Thyristors |
US4876468A (en) * | 1986-10-16 | 1989-10-24 | Square D Company | Thyristor driver turn-off circuit |
JPH01192218A (ja) * | 1988-01-28 | 1989-08-02 | Hitachi Ltd | パルス発生回路 |
EP0431215A1 (de) * | 1989-12-08 | 1991-06-12 | Siemens Aktiengesellschaft | Verfahren zum Schutz eines abschaltbaren Thyristors vor unzulässiger Überspannung und Schaltungsanordnung zur Durchführung des Verfahrens |
US5583423A (en) * | 1993-11-22 | 1996-12-10 | Bangerter; Fred F. | Energy saving power control method |
WO1997049165A1 (en) * | 1996-06-19 | 1997-12-24 | York International Corporation | Gate drive circuit for an scr |
US5850160A (en) * | 1997-06-18 | 1998-12-15 | York International Corporation | Gate drive circuit for an SCR |
US5754036A (en) * | 1996-07-25 | 1998-05-19 | Lti International, Inc. | Energy saving power control system and method |
US6172489B1 (en) | 1999-12-28 | 2001-01-09 | Ultrawatt.Com Inc. | Voltage control system and method |
FR2939575A1 (fr) * | 2008-12-09 | 2010-06-11 | Areva T & D Sa | Circuit de commande de thyristor a detection de tension de bras de thyristors. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5625829A (en) * | 1979-08-10 | 1981-03-12 | Toshiba Corp | Gate unit for semiconductor circuit breaker |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD51927A (US06312121-20011106-C00033.png) * | ||||
DE1763751C3 (de) * | 1968-08-01 | 1975-08-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Impulsgenerator für eine mit einer Wechselspannung synchrone Impulsfolge mit einstellbarem Phasenwinkel |
DE2062814B2 (de) * | 1970-12-21 | 1975-08-28 | Wsesojusny Elektrotechnitscheskij Institut Imeni W.I. Lenina, Moskau | Verfahren und Einrichtung zur Impulssteuerung von Hochspannungsvertilen |
US3781572A (en) * | 1972-01-27 | 1973-12-25 | Westinghouse Electric Corp | Ac power control apparatus with demand responsive driver circuit |
US3793537A (en) * | 1972-09-25 | 1974-02-19 | Westinghouse Electric Corp | Firing circuitry for semiconductive controlled rectifiers |
JPS5586373A (en) * | 1978-12-22 | 1980-06-30 | Toshiba Corp | Gate control system for thyristor converter |
JPS55141982A (en) * | 1979-04-24 | 1980-11-06 | Toshiba Corp | Gate circuit for thyristor converter |
-
1980
- 1980-02-28 JP JP2484980A patent/JPS56121363A/ja active Granted
-
1981
- 1981-02-26 EP EP81300812A patent/EP0035379B1/en not_active Expired
- 1981-02-26 DE DE8181300812T patent/DE3164361D1/de not_active Expired
- 1981-02-26 US US06/238,605 patent/US4417156A/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5625829A (en) * | 1979-08-10 | 1981-03-12 | Toshiba Corp | Gate unit for semiconductor circuit breaker |
Also Published As
Publication number | Publication date |
---|---|
DE3164361D1 (en) | 1984-08-02 |
EP0035379B1 (en) | 1984-06-27 |
EP0035379A1 (en) | 1981-09-09 |
US4417156A (en) | 1983-11-22 |
JPS56121363A (en) | 1981-09-24 |
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