JPS6145858B2 - - Google Patents
Info
- Publication number
- JPS6145858B2 JPS6145858B2 JP52078672A JP7867277A JPS6145858B2 JP S6145858 B2 JPS6145858 B2 JP S6145858B2 JP 52078672 A JP52078672 A JP 52078672A JP 7867277 A JP7867277 A JP 7867277A JP S6145858 B2 JPS6145858 B2 JP S6145858B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- electron beam
- alignment
- alignment mark
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010894 electron beam technology Methods 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7867277A JPS5412676A (en) | 1977-06-30 | 1977-06-30 | Position matching method for electron beam exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7867277A JPS5412676A (en) | 1977-06-30 | 1977-06-30 | Position matching method for electron beam exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5412676A JPS5412676A (en) | 1979-01-30 |
| JPS6145858B2 true JPS6145858B2 (zh) | 1986-10-09 |
Family
ID=13668347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7867277A Granted JPS5412676A (en) | 1977-06-30 | 1977-06-30 | Position matching method for electron beam exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5412676A (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633830A (en) * | 1979-08-29 | 1981-04-04 | Fujitsu Ltd | Detecting method for mark positioning by electron beam |
| JPS5946026A (ja) * | 1982-09-09 | 1984-03-15 | Toshiba Corp | 試料位置測定方法 |
| JPS59107511A (ja) * | 1982-12-13 | 1984-06-21 | Hitachi Ltd | パタ−ン形成方法 |
| JPH079874B2 (ja) * | 1985-03-15 | 1995-02-01 | 株式会社東芝 | 電子ビ−ム描画方法 |
| JPH0789531B2 (ja) * | 1985-12-24 | 1995-09-27 | 三菱電機株式会社 | 微細パターン形成方法 |
| JP3970546B2 (ja) | 2001-04-13 | 2007-09-05 | 沖電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113572A (en) * | 1975-03-31 | 1976-10-06 | Hitachi Ltd | Centering method for electronic ray picture and the unit using the sai d method |
-
1977
- 1977-06-30 JP JP7867277A patent/JPS5412676A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113572A (en) * | 1975-03-31 | 1976-10-06 | Hitachi Ltd | Centering method for electronic ray picture and the unit using the sai d method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5412676A (en) | 1979-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4454706B2 (ja) | 電子ビーム露光方法及び装置、ならびにデバイス製造方法 | |
| JP5346759B2 (ja) | 基板位置決め方法 | |
| US4503334A (en) | Method of using an electron beam | |
| KR20210028091A (ko) | 반도체 웨이퍼 검사를 위한 방법 및 그 시스템 | |
| US4322626A (en) | Method of electron beam exposure | |
| JPS6145858B2 (zh) | ||
| KR930010723B1 (ko) | 반도체 장치의 일치표지 검출방법 및 장치 | |
| JP2001085300A (ja) | マーク検出方法、電子線装置及び半導体デバイス製造方法 | |
| US4737646A (en) | Method of using an electron beam | |
| JPH06163381A (ja) | 電子線露光装置 | |
| JPH06204308A (ja) | 半導体ウエハの特殊パターン位置認識方法 | |
| JP3405671B2 (ja) | 電子ビーム描画装置及びマーク位置の検出方法 | |
| JP2000049070A (ja) | 電子ビーム露光装置、ならびにデバイス製造方法 | |
| JP2964978B2 (ja) | 半導体製造方法と半導体製造システムおよびそれらにより製造された半導体デバイス | |
| CN216648298U (zh) | 一种光刻对准标记和包括其的半导体结构 | |
| JPH0630332B2 (ja) | 位置決め装置、及び該装置を用いた基板の位置決め方法 | |
| JPH11340131A (ja) | 半導体集積回路の製造方法 | |
| JPS6320376B2 (zh) | ||
| JP2004071954A (ja) | ホールの検査方法 | |
| JP3168072B2 (ja) | 電子ビームスポット形状測定用チップ及びこれを使用した電子ビームスポット形状測定方法 | |
| JP2001085299A (ja) | 電子線装置の較正方法、電子線装置及び半導体デバイス製造方法 | |
| JPS5814533A (ja) | 電子ビ−ム露光方法 | |
| JPH0325010B2 (zh) | ||
| JP2006165140A (ja) | 電子ビーム描画方法および装置 | |
| JPS6369226A (ja) | 粒子線描画方法 |