JPS6144403A - Thick film resistance element - Google Patents

Thick film resistance element

Info

Publication number
JPS6144403A
JPS6144403A JP59167319A JP16731984A JPS6144403A JP S6144403 A JPS6144403 A JP S6144403A JP 59167319 A JP59167319 A JP 59167319A JP 16731984 A JP16731984 A JP 16731984A JP S6144403 A JPS6144403 A JP S6144403A
Authority
JP
Japan
Prior art keywords
resistive
film
trimming
thick film
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59167319A
Other languages
Japanese (ja)
Inventor
船原 利一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP59167319A priority Critical patent/JPS6144403A/en
Publication of JPS6144403A publication Critical patent/JPS6144403A/en
Pending legal-status Critical Current

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  • Non-Adjustable Resistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (技術分野) 本発明は厚膜抵抗素子に関し、より詳しくは、ハイブリ
ッド集積回路(IC)等を形成する絶縁基板上に形成さ
れる厚膜抵抗素子に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a thick film resistive element, and more particularly to a thick film resistive element formed on an insulating substrate forming a hybrid integrated circuit (IC) or the like.

(従来技術) 従来、この種の厚膜抵抗素子としては、第1図に示すよ
うに、アルミナ等の材料からなる絶縁基[(18!Q示
せず。)の上に形成された導体電極1.2間にまたがる
ように、一つの抵抗M4.3を印刷して焼き付け、この
抵抗膜3を点線で示すようにレーザもしくはサンドブラ
ストで削り、導体電極l。
(Prior Art) Conventionally, as shown in FIG. 1, this type of thick film resistance element has a conductor electrode 1 formed on an insulating base [(18!Q not shown) made of a material such as alumina. .2, one resistor M4.3 is printed and baked, and this resistive film 3 is shaved with a laser or sandblast as shown by the dotted line to form a conductive electrode L.

2間の抵抗値が所望の値となるように上記抵抗膜3をト
リミングするようにしたものが一般に知られている。上
記トリミングは、予め計算により定まる値に従って上記
抵抗膜3を所望の抵抗値の近くまで初期トリミングし、
次いで、上記絶縁基板上に形成された回路の電気特性が
規定の特性となるまで抵抗膜3をファンクショントリミ
ングすることにより行われる。
It is generally known that the resistive film 3 is trimmed so that the resistance value between the resistive film 3 and the resistive film 3 becomes a desired value. In the trimming, the resistive film 3 is initially trimmed to a value close to a desired resistance value according to a value determined in advance by calculation,
Next, the resistive film 3 is functionally trimmed until the electrical characteristics of the circuit formed on the insulating substrate become specified characteristics.

とこみで、上記の如き厚膜抵抗素子では、一定の面積抵
抗を有する1つの抵抗膜3を削ってトリミングしている
ため、ファンクショントリミングのトリミング感度が初
期トリミングのトリミング感度に等しく、ファンクンコ
ントリミングにより、導体電極lと2との間の抵抗値を
規定の値となるように氾#:S膜3を蟹密:;トリミン
“す16′譬田枡であった。
By the way, in the above-mentioned thick film resistive element, since one resistive film 3 having a fixed area resistance is trimmed by cutting, the trimming sensitivity of the function trimming is equal to the trimming sensitivity of the initial trimming, and the function trimming is performed. By trimming, the S film 3 was trimmed so that the resistance value between the conductor electrodes 1 and 2 became a specified value.

このため、第2図に示すように、上記導体電極1.2間
に中@tlr1極4を形成しておき、この中継電極4と
導体電極1との間に第1抵抗膜3aを形成し、また、上
記中u、1を極4と導体電極2との間には第1抵抗膜3
aの面積抵抗R2よりも低い面積抵抗R2を存する第2
抵抗膜3bを形成し、点線で示すように、第1抵抗膜3
aを初期トリミングした後、第2抵抗膜3bをファンク
ンコントリミングするようにして、トリミング精度を上
げるようにしたものも一般に知られている。
Therefore, as shown in FIG. 2, a middle @tlr1 pole 4 is formed between the conductor electrodes 1 and 2, and a first resistive film 3a is formed between the relay electrode 4 and the conductor electrode 1. In addition, between the pole 4 and the conductor electrode 2, a first resistive film 3 is provided between the pole 4 and the conductor electrode 2.
a, which has a sheet resistance R2 lower than the sheet resistance R2 of a.
A resistive film 3b is formed, and as shown by the dotted line, the first resistive film 3
It is also generally known that after the initial trimming of a, the second resistive film 3b is funkun-contrimmed to improve trimming accuracy.

第2図の厚膜抵抗素子では、第2抵抗膜3bのトリミン
グ感度は、第1抵抗膜3aに比較して、Rt/ R+に
減少し、ファンクンコントリミングにより、導体電極1
.2との間の抵抗値は、第1図の厚膜抵抗素子に比べて
、精密に調整することができるが、導体電極lと2との
間に中u1!極4を必要とし、第2図の厚膜抵抗素子を
使用したハイブリッド集積回路では、中継電極4により
、コストが高くなるとともに、形状も大形になるという
不具合があった。
In the thick film resistive element shown in FIG. 2, the trimming sensitivity of the second resistive film 3b is reduced to Rt/R+ compared to the first resistive film 3a, and due to funkun contour trimming, the trimming sensitivity of the second resistive film 3b is reduced to Rt/R+.
.. 2 can be adjusted more precisely than the thick film resistive element shown in FIG. A hybrid integrated circuit that requires the pole 4 and uses the thick film resistive element shown in FIG. 2 has the disadvantage that the relay electrode 4 increases the cost and increases the size.

(発明の目的) 本発明は、従来の厚膜抵抗素子における上記事情に鑑み
てなされたものであって、その目的は、絶縁基板上に形
成された第1抵抗膜および第2抵抗膜に重なり部分を設
けることにより、この重なり部分で第1抵抗膜と第2抵
抗膜とを相互に接続し、中継電極をなくして厚膜抵抗素
子のコストを低くし、形状の小形化を図るとともに、面
積抵抗の低い第1抵抗膜と第2低抗膜との重なり部分を
利用してトリミング精度を向上させることである。
(Object of the Invention) The present invention has been made in view of the above-mentioned circumstances regarding conventional thick film resistive elements, and the purpose is to By providing a section, the first resistive film and the second resistive film are connected to each other at this overlapping part, eliminating the relay electrode, reducing the cost of the thick film resistive element, reducing the size, and reducing the area. The purpose of this invention is to improve trimming accuracy by utilizing the overlapping portion of a first resistive film with low resistance and a second low resistive film.

(発明の構成) このため、本発明は、絶縁基板上の2つの導体電極にま
たがって面積抵抗の異なる第1抵抗膜および第2抵抗膜
がその一部が相互に重なり合って形成されていることを
特徴としている。
(Structure of the Invention) For this reason, the present invention is characterized in that a first resistive film and a second resistive film having different sheet resistances are formed over two conductive electrodes on an insulating substrate, with parts thereof overlapping each other. It is characterized by

(実施例) 以下、添付図面を参照して本発明の詳細な説明する。(Example) Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

第3図において、11.12は図示しない絶縁基板にほ
ぼ平行に形成された導体電極、13は第1抵抗膜、14
は第2抵抗膜、15はこれら第1抵抗M13および第2
抵抗膜14との重なり部分である。
In FIG. 3, 11 and 12 are conductor electrodes formed substantially parallel to an insulating substrate (not shown), 13 is a first resistive film, and 14
15 is the second resistor film, and 15 is the first resistor M13 and the second resistor film.
This is the overlapped portion with the resistive film 14.

上記第1抵抗113および第2抵抗膜I4はいずれも上
記絶縁板に抵抗材料を印刷した後、焼き付けることによ
り形成され、上記導体電極11゜12にまたがり、しか
もその一部が上記型なり部分15にて相互に重なってい
る。
The first resistor 113 and the second resistor film I4 are both formed by printing a resistive material on the insulating plate and then baking it, and extend over the conductor electrodes 11 and 12, and a part of the resistor film I4 is formed by printing a resistive material on the insulating plate and then baking it. They overlap each other.

上記第2抵抗114の面積抵抗R1,は第1抵抗M41
3の面積抵抗R1jlよりも小さくなっている。
The area resistance R1 of the second resistor 114 is the first resistor M41.
It is smaller than the area resistance R1jl of No. 3.

上記のようにすれば、第4rgJに示すように、第1低
抗113と第2低抗WA14との重なり部分15の面積
抵抗RIBは、上記面積抵抗RI3およびR24のいず
れよりも小さくなる。
In the above manner, as shown in the fourth rgJ, the area resistance RIB of the overlapping portion 15 between the first resistance resistance 113 and the second resistance resistance WA14 becomes smaller than both of the area resistances RI3 and R24.

従って、トリミング時、第3図に示すように、導体電極
11と12との間にて、抵抗膜13を矢印A1の向きに
第1抵抗1i1+3を規定の長さだけ初期トリミングし
、その後、上記矢印A、とは逆の矢印A、の向きに第2
抵抗g!14を第2図の場合と同様にして、ファンクン
コントリミングする。
Therefore, at the time of trimming, as shown in FIG. 3, the first resistor 1i1+3 is initially trimmed to a specified length between the conductor electrodes 11 and 12 in the direction of arrow A1, and then the The second arrow is in the direction of arrow A, which is opposite to arrow A.
Resistance g! 14 is subjected to funkun contour trimming in the same manner as in FIG.

このファンクンコントリミングにより、導体電極11と
12との間の抵抗値が所定の抵抗値とならないときには
、第2抵抗[14を越えて上記型なり部分15をファン
クンぢントリミングすれば、この重なり部分15の面積
抵抗RI5は第1抵抗膜13の面積抵抗RI3および第
2抵抗1@14の面積抵抗R14よりも小さいため、上
記ファンクンコントリミングをより精密に行うことがで
きる。
If the resistance value between the conductor electrodes 11 and 12 does not reach a predetermined resistance value due to this funkun trimming, if the molded portion 15 is funkun trimmed beyond the second resistor [14], this can be fixed. Since the sheet resistance RI5 of the overlapping portion 15 is smaller than the sheet resistance RI3 of the first resistive film 13 and the sheet resistance R14 of the second resistor 1@14, the funk'n contour trimming described above can be performed more precisely.

また、第3図の厚膜抵抗素子では第2図の厚膜抵抗素子
のような中a電極4が不要となり、厚膜抵抗素子の形成
コストを引き下げることができ、寸法も小さくすること
ができる。
In addition, the thick film resistor element shown in FIG. 3 does not require the middle a electrode 4 like the thick film resistor element shown in FIG. .

本発明は、ハイブリッド集積回路の他に、抵抗ネットワ
ーク等の回路にら適用することができる。
The present invention can be applied to circuits such as resistor networks in addition to hybrid integrated circuits.

(発明の効果) 以上、詳述したことからも明らかなように、本発明は、
厚膜抵抗素子において、抵抗基板に形成した第1抵抗膜
と第2抵抗膜とに重なり部分を設けて3種類の面積抵抗
を宵する領域を形成するようにしたから、面積抵抗の異
なるトリミング領域が増加し、トリミング精度を向上さ
せることができ、また、トリミング領域を選択すること
により、2段階と3段階のトリミングを使い分けするこ
とができる。しかも、ml抵抗膜と第2抵抗膀との中継
電極が不要となり、厚膜抵抗素子のコストを引き下げる
ことができ、厚膜抵抗素子の寸法も小さくすることがで
きる利点がある。
(Effects of the Invention) As is clear from the detailed description above, the present invention has the following effects:
In the thick film resistor element, since the first resistive film and the second resistive film formed on the resistive substrate are provided with an overlapping portion to form regions with three types of sheet resistance, trimming regions with different sheet resistances are formed. This increases trimming accuracy, and by selecting the trimming area, it is possible to use two-stage and three-stage trimming. Furthermore, there is no need for a relay electrode between the ml resistive film and the second resistive bladder, and there is an advantage that the cost of the thick film resistive element can be reduced, and the dimensions of the thick film resistive element can also be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は夫々従来の厚膜抵抗素子の平面図
、第3図は本発明に係る厚膜抵抗素子の一実施例の平面
図、第4図は第3図の厚膜抵抗素子の抵抗膜の位置と抵
抗値の関係を示す説明図である。 11.12・・・導体電極、13・・・第1抵抗膜、1
4・・第2抵抗膜、15・・・重なり部分。 特許出願人  株式会社 村田製作所 代理人  弁理士  青 山  葆  ほか2名第1図
     WJ2図 →↑6Jυ℃ル鍵のイfL置
1 and 2 are respectively plan views of conventional thick film resistive elements, FIG. 3 is a plan view of an embodiment of the thick film resistive element according to the present invention, and FIG. 4 is the thick film resistor of FIG. 3. FIG. 3 is an explanatory diagram showing the relationship between the position of a resistive film of an element and its resistance value. 11.12... Conductor electrode, 13... First resistive film, 1
4...Second resistance film, 15...Overlapping portion. Patent Applicant Murata Manufacturing Co., Ltd. Agent Patent Attorney Aoyama Aoyama and 2 others Figure 1 WJ2 Figure → ↑6 Jυ℃ key ifL location

Claims (1)

【特許請求の範囲】[Claims] (1)絶縁基板上の2つの導体電極にまたがって面積抵
抗の異なる第1抵抗膜および第2抵抗膜がその一部が相
互に重なり合って形成されていることを特徴とする厚膜
抵抗素子。
(1) A thick film resistive element characterized in that a first resistive film and a second resistive film having different sheet resistances are formed over two conductor electrodes on an insulating substrate, with parts of the resistive films overlapping each other.
JP59167319A 1984-08-09 1984-08-09 Thick film resistance element Pending JPS6144403A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59167319A JPS6144403A (en) 1984-08-09 1984-08-09 Thick film resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59167319A JPS6144403A (en) 1984-08-09 1984-08-09 Thick film resistance element

Publications (1)

Publication Number Publication Date
JPS6144403A true JPS6144403A (en) 1986-03-04

Family

ID=15847541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59167319A Pending JPS6144403A (en) 1984-08-09 1984-08-09 Thick film resistance element

Country Status (1)

Country Link
JP (1) JPS6144403A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180054273A (en) * 2016-11-15 2018-05-24 삼성전기주식회사 Chip resistor and chip resistor assembly

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180054273A (en) * 2016-11-15 2018-05-24 삼성전기주식회사 Chip resistor and chip resistor assembly

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