JPS6143847B2 - - Google Patents
Info
- Publication number
- JPS6143847B2 JPS6143847B2 JP11070377A JP11070377A JPS6143847B2 JP S6143847 B2 JPS6143847 B2 JP S6143847B2 JP 11070377 A JP11070377 A JP 11070377A JP 11070377 A JP11070377 A JP 11070377A JP S6143847 B2 JPS6143847 B2 JP S6143847B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- etching
- substrate
- polycrystalline silicon
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 27
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 37
- 239000007789 gas Substances 0.000 description 25
- 238000000992 sputter etching Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 3
- 235000019404 dichlorodifluoromethane Nutrition 0.000 description 3
- 150000003377 silicon compounds Chemical class 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11070377A JPS5444477A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11070377A JPS5444477A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5444477A JPS5444477A (en) | 1979-04-07 |
| JPS6143847B2 true JPS6143847B2 (zh) | 1986-09-30 |
Family
ID=14542306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11070377A Granted JPS5444477A (en) | 1977-09-14 | 1977-09-14 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5444477A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639848U (zh) * | 1986-07-02 | 1988-01-22 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4234362A (en) * | 1978-11-03 | 1980-11-18 | International Business Machines Corporation | Method for forming an insulator between layers of conductive material |
| JPS57112028A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| EP2692514B1 (de) | 2012-07-31 | 2019-06-26 | Wincor Nixdorf International GmbH | Kompaktierungsvorrichtung und Verfahren zum Kompaktieren von Gebinden |
-
1977
- 1977-09-14 JP JP11070377A patent/JPS5444477A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639848U (zh) * | 1986-07-02 | 1988-01-22 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5444477A (en) | 1979-04-07 |
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