JPS6143840B2 - - Google Patents

Info

Publication number

JPS6143840B2

JPS6143840B2 JP57105989A JP10598982A JPS6143840B2 JP S6143840 B2 JPS6143840 B2 JP S6143840B2 JP 57105989 A JP57105989 A JP 57105989A JP 10598982 A JP10598982 A JP 10598982A JP S6143840 B2 JPS6143840 B2 JP S6143840B2

Authority

JP

Japan

Prior art keywords

film

thin film

light

dielectric layer

dielectric

Prior art date

1982-06-18

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 239000010408 film Substances 0.000 claims description 22
• 239000010409 thin film Substances 0.000 claims description 19
• 229910021417 amorphous silicon Inorganic materials 0.000 description 18
• 238000010586 diagram Methods 0.000 description 8
• 239000000203 mixture Substances 0.000 description 7
• 230000005684 electric field Effects 0.000 description 6
• 230000007423 decrease Effects 0.000 description 4
• 239000000463 material Substances 0.000 description 4
• HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
• 229930195733 hydrocarbon Natural products 0.000 description 3
• 150000002430 hydrocarbons Chemical class 0.000 description 3
• 239000008188 pellet Substances 0.000 description 3
• 239000004215 Carbon black (E152) Substances 0.000 description 2
• 238000005566 electron beam evaporation Methods 0.000 description 2
• 239000011521 glass Substances 0.000 description 2
• 230000005283 ground state Effects 0.000 description 2
• 229910052739 hydrogen Inorganic materials 0.000 description 2
• 238000000034 method Methods 0.000 description 2
• 238000004544 sputter deposition Methods 0.000 description 2
• 239000000758 substrate Substances 0.000 description 2
• 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
• UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
• -1 Si 3 N 4 Inorganic materials 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• 229910006404 SnO 2 Inorganic materials 0.000 description 1
• 229910010413 TiO 2 Inorganic materials 0.000 description 1
• 239000013543 active substance Substances 0.000 description 1
• 230000015556 catabolic process Effects 0.000 description 1
• 238000005229 chemical vapour deposition Methods 0.000 description 1
• 239000000470 constituent Substances 0.000 description 1
• 238000000151 deposition Methods 0.000 description 1
• 230000008021 deposition Effects 0.000 description 1
• 239000007789 gas Substances 0.000 description 1
• 239000001257 hydrogen Substances 0.000 description 1
• 238000004020 luminiscence type Methods 0.000 description 1
• 238000004519 manufacturing process Methods 0.000 description 1
• 238000005546 reactive sputtering Methods 0.000 description 1
• 239000004065 semiconductor Substances 0.000 description 1