JPS6142956A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPS6142956A JPS6142956A JP16444384A JP16444384A JPS6142956A JP S6142956 A JPS6142956 A JP S6142956A JP 16444384 A JP16444384 A JP 16444384A JP 16444384 A JP16444384 A JP 16444384A JP S6142956 A JPS6142956 A JP S6142956A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure sensor
- pressure
- periphery
- sensitivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002093 peripheral effect Effects 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 230000035945 sensitivity Effects 0.000 abstract description 17
- 238000005530 etching Methods 0.000 abstract description 4
- 238000006073 displacement reaction Methods 0.000 abstract description 2
- 230000001788 irregular Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000007115 recruitment Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は圧力センチ−に関し、特に感度ばらつきのない
圧力センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a pressure centimeter, and particularly to a pressure sensor with no variation in sensitivity.
（従来技術とその問題点）
従来、圧力センサの分野では圧力感度に関して製品間の
ばらつきを低減することが大きなりＩＡ題であった０当
該圧力感度のばらつきの原因として、（１）ダイアフラ
ムの膜厚の違い、（２）不純物濃度のばらつき等によφ
各感圧素子の感度の違い、（３）ダイアフラム上の感圧
素子の位置ずれ等の散因があげられる。近年、電気化学
工、チング等によりダイアフラムの膜厚制衝が可能とな
り、上記（１）の要因による圧力感度ばらつきの低減化
に利用されている。また、半導体製造装置の進歩により
上記（２）の不純物濃度のばらつきを少なくすることも
可能となった。(Prior art and its problems) Conventionally, in the field of pressure sensors, reducing the variation between products in pressure sensitivity has been a major problem.0 The causes of the variation in pressure sensitivity are: (1) diaphragm membrane; Due to differences in thickness, (2) variations in impurity concentration, etc.
These factors include differences in sensitivity of each pressure-sensitive element, and (3) misalignment of the pressure-sensitive element on the diaphragm. In recent years, it has become possible to control the film thickness of a diaphragm using electrochemical engineering, coating, etc., and this is used to reduce variations in pressure sensitivity caused by the factor (1) above. Furthermore, advances in semiconductor manufacturing equipment have made it possible to reduce the variation in impurity concentration described in (2) above.
一万、通常、感圧素子の位置決めは、顕微鏡を用いて、
技術者が予め刻まれた目印に従って目合せを行なってい
る。従がって、多少の位置ずれはこれを避けることがで
きない。以下、従来例を図をあげて説明し、同時にその
欠点について述べる。10,000 Usually, the positioning of the pressure-sensitive element is done using a microscope.
The technician is performing alignment according to the marks carved in advance. Therefore, some misalignment cannot be avoided. Hereinafter, a conventional example will be explained with reference to figures, and at the same time, its drawbacks will be discussed.
第９図は従来の圧力変換器の構成例であシ、又、第１０
図は従来のダイアフラムを上から見た図である。第９図
において、拡散型ひずみゲージ抵抗１の置かれる厚さ均
一のダイアフラム１３と台座１４により構成されるダイ
アフラム型圧力センサ３は、該圧力センサ３の線膨張係
数に極めて近い線膨張係数を有するガラス４（５すえば
コーニング社製７７４０パイレツクスガラス）に静電ボ
ンディングによって接着されている。Figure 9 shows an example of the configuration of a conventional pressure transducer;
The figure is a top view of a conventional diaphragm. In FIG. 9, a diaphragm-type pressure sensor 3 composed of a diaphragm 13 of uniform thickness and a pedestal 14 on which a diffusion-type strain gauge resistor 1 is placed has a linear expansion coefficient extremely close to that of the pressure sensor 3. It is bonded to glass 4 (5 is Corning 7740 Pyrex glass) by electrostatic bonding.
さらにカラス４はパッケージ６に金、スズあるいは金、
スズの共晶合金５によって接着されている。また、パッ
ケージ６は、キャップ９によって封止されている。以下
に前記圧力変換器の動作原理を記す。圧力の測定される
気体１０が導通管８を通して供給され、一方キャッグ９
につけられた導通管１２を通して参照となる気体１１が
供給される０１２は大気中に開放される場合本ある。圧
力センサ３のダイア７２ム１３には、上面と下面の気体
の圧力の差によりひずみが生じ、ダイアフラム１３上に
つくられ、ゲージ抵抗により構成されたホイートストン
ブリッジ回路において、当該ブリッジ回路の出力電圧変
化が検出される。当該ブリッジ回路の励起電圧及び出力
電圧は、金属細線２を介してリード７より入出力される
。Furthermore, crow 4 has gold, tin or gold in package 6.
It is bonded by a tin eutectic alloy 5. Furthermore, the package 6 is sealed with a cap 9. The operating principle of the pressure transducer will be described below. The gas 10 whose pressure is to be measured is supplied through the conduit 8, while the cag 9
Reference gas 11 is supplied through a conduit 12 attached to 012, which is sometimes opened to the atmosphere. Strain occurs in the diaphragm 13 of the pressure sensor 3 due to the difference in gas pressure between the upper and lower surfaces, and in the Wheatstone bridge circuit formed on the diaphragm 13 and composed of gauge resistors, the output voltage of the bridge circuit changes. is detected. The excitation voltage and output voltage of the bridge circuit are input and output from the lead 7 via the thin metal wire 2 .
第１０図のダイアフラム１３は通常シリコンの（Ｚｏｏ
）面を利用しておフ、当該ダイア７２ムの周辺＜１１０
＞方向に向けられている０かかる場合には、ゲージ抵抗
１は感度を大きくとる目的で、ダイアフラム１３の周辺
近くに位置決めされる○第１１図は、圧力が印加された
際にダイアフラム中心線上（第１０図Ａ−Ａ’）に生じ
た同方向−軸応力の分布を示したものである。図中、３
０はゲージ抵抗１の置かれる位置を示している０同図に
明らかなように、従来、ゲージ抵抗１の置かれる位置は
応力の急激に変化する所でもあった０従がって、従来の
構造を持つ圧力センサでは、先に述べたように、ゲージ
抵抗の位置決めの際に不可避的に生ずるわずかのずれに
対しても、感度の大きな変動が起とシ、結局、圧力セン
サの感度ばらつきを避けることができないという欠点が
あった０
（発明の目的）
本発明の目的は、上記従来技術の欠点を除去し、感度ば
らつきのない圧力センサを提供することにある。The diaphragm 13 in FIG. 10 is usually made of silicon (Zoo
) plane, use the area around the diamond 72m <110
In such a case, the gauge resistor 1 is positioned close to the periphery of the diaphragm 13 for the purpose of increasing sensitivity. It shows the distribution of the same direction-axial stress generated in FIG. 10 (A-A'). In the diagram, 3
0 indicates the position where the gauge resistor 1 is placed.0 As is clear from the same figure, conventionally the position where the gauge resistor 1 is placed is also a place where the stress changes rapidly.0Therefore, the conventional position In a pressure sensor with a structure, as mentioned earlier, even the slightest deviation that inevitably occurs during the positioning of the gauge resistor causes large fluctuations in sensitivity, which ultimately causes variations in the sensitivity of the pressure sensor. (Objective of the Invention) An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a pressure sensor with no variation in sensitivity.
（発明の構成）
本発明の圧力センサは、印加した圧力に応答する感圧素
子と、該感圧素子の置かれるダイアフラムと、該ダイア
フラムの周囲を固定する台座より構成される圧力センサ
において、前記ダイアフラムの周辺部が中央部より厚く
されていることＫより構成される。(Structure of the Invention) The pressure sensor of the present invention includes a pressure-sensitive element that responds to applied pressure, a diaphragm on which the pressure-sensitive element is placed, and a pedestal that fixes the periphery of the diaphragm. The peripheral part of the diaphragm is thicker than the central part.
（発明の作用原理）
本発明の圧力センサは感圧素子の置かれるダイアフラム
が従来のように均一の厚さでなく、周辺部が中央部より
厚く構成されている。このダイアフラムの中心線上に生
じた応力を同方向−軸応力について示すと第３図の関係
が得られ、感圧素子の置かれる位置での応力の変化が著
しく小さいことが明らかになった。従って本発明では感
圧素子を置くダイアフラムを中央部より周辺部を厚くし
、応力変化のすくない位置に感圧素子を設置したので感
圧素子の設置位置のわずかの変化に対し圧力センサの感
度ばらつきを大幅に低減することができた。(Principle of Operation of the Invention) In the pressure sensor of the present invention, the diaphragm on which the pressure-sensitive element is placed does not have a uniform thickness unlike the conventional diaphragm, but has a peripheral portion thicker than a central portion. When the stress generated on the center line of the diaphragm is shown in terms of co-axial stress, the relationship shown in FIG. 3 is obtained, and it is clear that the change in stress at the position where the pressure sensitive element is placed is extremely small. Therefore, in the present invention, the diaphragm on which the pressure-sensitive element is placed is made thicker at the periphery than at the center, and the pressure-sensitive element is installed in a position where stress changes less. Therefore, the sensitivity of the pressure sensor varies due to slight changes in the installation position of the pressure-sensitive element. was able to be significantly reduced.
（実施例）
以下、本発明の実施例てついて、図面を参照して説明す
る。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図および第２図は１本発明の一実施例を示す図で、
第１図は断面図、第２図は第１図のダイアフラムを上か
ら見た図である。図において、従来例として示した第９
図および第１０図と同一番号は同一構成要素を示してい
る。第１図と従来例の第９図とはダイアフラムの構造の
違いを除いて同一構成であり、以下当該ダイアフラムに
ついて説明を行ない、他の要素についてはこれを省くＯ
当該ダイアフラム４０ａでは、ＩＭ辺部４１が中央部４
２よりも厚く、ゲージ抵抗１は周辺部４１に置かれてい
る。ダイアフラム４０ａを作製するには、例えば第一段
のマスクを台座１４の下面に用いてこれを保護した後、
エツチングにより周辺部４１をｆ／＃−シ、続いて、第
二段のマスクを台座１４および周辺部４１の下面に用い
て中央部４２を作製するという方法を用いると良い。な
お、当該エツチングを行なう際には、ダイアフラム４０
Ｈの上面を常に保護してエツチングを受けないようにし
なければならない。また、エツチングの技術として、化
学エツチング、放電加工等を用いることができる。1 and 2 are diagrams showing an embodiment of the present invention,
FIG. 1 is a sectional view, and FIG. 2 is a top view of the diaphragm in FIG. In the figure, the ninth
The same numbers as in the figures and FIG. 10 indicate the same components. Figure 1 and Figure 9 of the conventional example have the same configuration except for the difference in the structure of the diaphragm.The diaphragm will be explained below, and other elements will be omitted.
In the diaphragm 40a, the IM side portion 41 is located at the center portion 4.
2, the gauge resistor 1 is placed at the periphery 41. To manufacture the diaphragm 40a, for example, after protecting the lower surface of the pedestal 14 by using a first-stage mask,
It is preferable to use a method in which the peripheral part 41 is etched to f/#-sha, and then a second stage mask is used on the lower surface of the pedestal 14 and the peripheral part 41 to form the central part 42. Note that when performing the etching, the diaphragm 40
The top surface of H must always be protected from etching. Further, as the etching technique, chemical etching, electric discharge machining, etc. can be used.
ｖ、、３図は、圧力が印加された際にダイアフラム４０
ａの中心線上（第２図Ｂ−Ｂ／ ）Ｉｃ生じた応力を同
一方向一軸応力について示したものである。3 shows the diaphragm 40 when pressure is applied.
The stress generated on the center line of a (FIG. 2 B-B/) Ic is shown for uniaxial stress in the same direction.
図中６０は、感圧素子例えばゲージ抵抗１の置かれる位
置を示している。同図は、従来例の第１１図と異なシ、
当該感圧素子の置かれる位置で応力の変化が著しく小さ
い。従がって、本冥施例の構造をもつ圧力センサでは、
感圧素子の位置ずれにより生ずる感度ばらつきを低減す
ることが可能である。In the figure, 60 indicates a position where a pressure sensitive element, for example, a gauge resistor 1 is placed. This figure shows a different system from the conventional example shown in FIG. 11.
The change in stress is extremely small at the position where the pressure sensitive element is placed. Therefore, in the pressure sensor having the structure of this example,
It is possible to reduce sensitivity variations caused by positional displacement of the pressure sensitive element.
第４図乃至第７図は本発明の他の実施例である。FIGS. 4 to 7 show other embodiments of the present invention.
図において、第１図と同一番号は同一構成要素を示して
いる。これらの実施例において、ダイアフラムの周辺部
４１の形状が、第４図ではダイアフラム４０ｂが周辺に
厚いテーパに、第５図ではダイアフラム４０ｃが内側に
厚いテーパ形状になっている０゛また、第６図では、ダ
イアフラム４０ｄが周辺部４１が二段のステ、グにょシ
形成されている。第７図では、中央部４２より漸次周辺
に厚いテーパによりダイア７ラム４０ｅが形成されてい
る。上記の実施例の他に、周辺部４１が、二段以上のス
テップあるいはテーパからなる構成を持りても良い。ま
た、上記ステ、グとテーパおよび第７図等を任意に組み
合せた構成も本発明に含まれる。In the figure, the same numbers as in FIG. 1 indicate the same components. In these embodiments, the shape of the peripheral portion 41 of the diaphragm is such that in FIG. 4, the diaphragm 40b has a thick taper on the periphery, and in FIG. In the figure, the diaphragm 40d has a peripheral portion 41 formed in two stages. In FIG. 7, a diaphragm 40e is formed with a taper that gradually becomes thicker from the center portion 42 to the periphery. In addition to the embodiments described above, the peripheral portion 41 may have a configuration consisting of two or more steps or a taper. Further, the present invention also includes a configuration in which the above steps, tapers, tapers, FIG. 7, etc. are arbitrarily combined.
第８図は本発明のその他の一実施例を示す図である。図
において、第１図と同一番号は同一構成要素を示してい
る。本実施例は、第２図の実施例の周辺部４１にくびれ
８０が形成された点において前記実施例と異なる構成を
もつが、第４図乃至第７図に示す実施例と同様の効果が
得られる。FIG. 8 is a diagram showing another embodiment of the present invention. In the figure, the same numbers as in FIG. 1 indicate the same components. This embodiment differs from the previous embodiment in that a constriction 80 is formed in the peripheral portion 41 of the embodiment shown in FIG. 2, but it has the same effect as the embodiment shown in FIGS. 4 to 7. can get.
以上、本発明について例を挙げ詳細な説明を行なりた。The present invention has been described above in detail by giving examples.
なお、本発明の構成は、前記′ＪＡ施例施工第１図イア
フラム４０ａ（周辺部４１と中央部４２を含む）を除く
他の構成要素について何ら制限されず、通常用いられる
全ての構成が本発明に含まれる。Note that the configuration of the present invention is not limited in any way to the other components except for the iaphragm 40a (including the peripheral portion 41 and the central portion 42), and all commonly used configurations are included in the present invention. Included in invention.
また、前記ダイアフラムを金属で構成し、該金属の表面
の一万、あるいは両側にストレンゲージを貼りつけたシ
、金Ｗ％あるいは半導体からなるストレンゲージを蒸着
したシすること等によって、該ダイアフラムに印加され
た圧力を検出する構成、シリコン等半導体よりなる前記
ダイアクラムの表面をシリコン等の酸化膜、窒化膜等で
保護した構成、及び、該表面上に周辺回路を形成した構
成も本発明に含まれる。Alternatively, the diaphragm may be made of a metal, and a strain gauge may be attached to the surface or both sides of the metal, or a strain gauge made of gold or a semiconductor may be vapor-deposited. The present invention also includes a configuration in which the applied pressure is detected, a configuration in which the surface of the diacrum made of a semiconductor such as silicon is protected with an oxide film, a nitride film, etc. of silicon, and a configuration in which a peripheral circuit is formed on the surface. It will be done.
なお、上記実施例において周辺部の領域および厚さを大
きくする程、ゲージ抵抗に働く応力の分布は緩やかにな
シ、従がって、感度ばらつきが減少する。しかし、この
場合には、同時に応力の絶対値が減少することにより、
感度が小さくなる０従がって、圧力センサを設計する際
には、以上の効果を考慮して、感度および感度ばらつき
を最適にするようにダイアフラムの周辺部の寸法を決め
なければならない。In the above embodiment, the larger the area and thickness of the peripheral portion, the more gradual the distribution of stress acting on the gauge resistance becomes, and therefore the sensitivity variation decreases. However, in this case, as the absolute value of stress decreases at the same time,
Therefore, when designing a pressure sensor, the dimensions of the peripheral portion of the diaphragm must be determined in such a way as to optimize the sensitivity and sensitivity variations, taking the above effects into consideration.
（発明の効果）
以上説明したとおシ、本発明によれば、感度ばらつきの
ない圧力センサを供給することが可能とな〕、その結果
圧力センサの品質の向上および展進コストを低減するこ
とのできる効果は大きいものである。(Effects of the Invention) As explained above, according to the present invention, it is possible to supply a pressure sensor with no variation in sensitivity, and as a result, it is possible to improve the quality of the pressure sensor and reduce the development cost. The effects that can be achieved are significant.
第１図は本発明の一実施例の断面図、第２図はｉｆ図の
ダイアフラムを上から見た図、第３図は第２図のＢ−Ｂ
’に沿って生ずる応力の分布図、第４図〜第８図はそれ
ぞれ本発明の他の実施例のダイアフラムの断面図、第９
図は従来の圧力センサの断面図、第１Ｏ図は第９図のダ
イアフラムを上から見た図、第１１図は第１Ｏ図のＡ−
Ａ’に沿って生ずる応力の分布図である。
ｌ・・・・・・ゲージ抵抗、２・・・・・・金属細線、
３・・・・・・圧力センサ、４・・・・・・ガラス、５
・・・・・・金、スズ等の共晶合金、６・・・・・・パ
ッケージ、７・・・・・・リード、８゜１２・・・・・
・導通管、９・・・・・・キャップ、１０．１１・・パ
・・気体、１３・・・・・・ダイアフラム、１４・・・
・・・台座、３０．６０・・・・・・ゲージ抵抗の置か
れる位置、４０゜４０ａ、４０ｂ、４０ｃｔ ４０ｄ
、４０ｅ＊４０ｆ・・・・・・ダイアフラム、４１・・
・・・・周辺部、４２・・・・・・中央部、８０・・・
・・・くびれ０
茶 ｌ 図
＄ ２ 図
ｆ；３ＷＪ
募６圓
＄？回
Ｉｏ
第 ９１１！ｌｒ
茶 １０ 図
某ＩＩ 図Fig. 1 is a sectional view of an embodiment of the present invention, Fig. 2 is a top view of the diaphragm in the if diagram, and Fig. 3 is taken from BB in Fig. 2.
Figures 4 to 8 are cross-sectional views of the diaphragm of other embodiments of the present invention, respectively.
The figure is a sectional view of a conventional pressure sensor, Figure 1O is a top view of the diaphragm in Figure 9, and Figure 11 is A-A in Figure 1O.
It is a distribution map of the stress which arises along A'. l... Gauge resistance, 2... Thin metal wire,
3...Pressure sensor, 4...Glass, 5
...eutectic alloy of gold, tin, etc., 6 ... package, 7 ... lead, 8゜12 ...
・Conduction pipe, 9... Cap, 10.11... Gas, 13... Diaphragm, 14...
...Pedestal, 30.60...Position where gauge resistance is placed, 40° 40a, 40b, 40ct 40d
, 40e*40f... diaphragm, 41...
...Peripheral part, 42...Central part, 80...
...Neckline 0 Brown l Figure $2 Figure f; 3WJ Recruitment 6 yen $? Episode Io No. 911! lr tea 10 figure certain II figure
Claims (1)
れるダイアフラムと、該ダイアフラムの周囲を固定する
台座より構成される圧力センサにおいて、前記ダイアフ
ラムの周辺部が中央部より厚いことを特徴とする圧力セ
ンサ。A pressure sensor comprising a pressure sensitive element that responds to applied pressure, a diaphragm on which the pressure sensitive element is placed, and a pedestal that fixes the periphery of the diaphragm, characterized in that the peripheral part of the diaphragm is thicker than the central part. pressure sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59164443A JPH0750788B2 (en) | 1984-08-06 | 1984-08-06 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59164443A JPH0750788B2 (en) | 1984-08-06 | 1984-08-06 | Pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6142956A true JPS6142956A (en) | 1986-03-01 |
| JPH0750788B2 JPH0750788B2 (en) | 1995-05-31 |
Family
ID=15793261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59164443A Expired - Lifetime JPH0750788B2 (en) | 1984-08-06 | 1984-08-06 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750788B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61172378A (en) * | 1985-01-28 | 1986-08-04 | Nec Corp | Pressure sensor |
| JPH08293617A (en) * | 1995-04-24 | 1996-11-05 | Nippondenso Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2006516327A (en) * | 2003-03-11 | 2006-06-29 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Diaphragm sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5160577A (en) * | 1974-11-25 | 1976-05-26 | Tokyo Shibaura Electric Co | HANDOTAIATSURYOKUKENSHUTSUKI |
-
1984
- 1984-08-06 JP JP59164443A patent/JPH0750788B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5160577A (en) * | 1974-11-25 | 1976-05-26 | Tokyo Shibaura Electric Co | HANDOTAIATSURYOKUKENSHUTSUKI |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61172378A (en) * | 1985-01-28 | 1986-08-04 | Nec Corp | Pressure sensor |
| JPH08293617A (en) * | 1995-04-24 | 1996-11-05 | Nippondenso Co Ltd | Semiconductor device and manufacturing method thereof |
| JP2006516327A (en) * | 2003-03-11 | 2006-06-29 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Diaphragm sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0750788B2 (en) | 1995-05-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |