JPS6141152B2 - - Google Patents
Info
- Publication number
- JPS6141152B2 JPS6141152B2 JP12961278A JP12961278A JPS6141152B2 JP S6141152 B2 JPS6141152 B2 JP S6141152B2 JP 12961278 A JP12961278 A JP 12961278A JP 12961278 A JP12961278 A JP 12961278A JP S6141152 B2 JPS6141152 B2 JP S6141152B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- gate
- semiconductor layer
- drain
- gate region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010410 layer Substances 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12961278A JPS5556667A (en) | 1978-10-20 | 1978-10-20 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12961278A JPS5556667A (en) | 1978-10-20 | 1978-10-20 | Semiconductor integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5556667A JPS5556667A (en) | 1980-04-25 |
| JPS6141152B2 true JPS6141152B2 (enrdf_load_stackoverflow) | 1986-09-12 |
Family
ID=15013759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12961278A Granted JPS5556667A (en) | 1978-10-20 | 1978-10-20 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5556667A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0783054B2 (ja) * | 1993-09-27 | 1995-09-06 | 株式会社東芝 | 半導体装置 |
-
1978
- 1978-10-20 JP JP12961278A patent/JPS5556667A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5556667A (en) | 1980-04-25 |
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