JPS6140100B2 - - Google Patents
Info
- Publication number
- JPS6140100B2 JPS6140100B2 JP5569279A JP5569279A JPS6140100B2 JP S6140100 B2 JPS6140100 B2 JP S6140100B2 JP 5569279 A JP5569279 A JP 5569279A JP 5569279 A JP5569279 A JP 5569279A JP S6140100 B2 JPS6140100 B2 JP S6140100B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photomask
- coating
- pinholes
- protrusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910000423 chromium oxide Inorganic materials 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 Teflon Chemical compound 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
従来、半導体素子製造に使われているフオトマ
スクは、ガラス基板の面と面の角縁を砥石等を使
つていわゆる面取り加工を行なうことと基板面
に、クローム及び酸化クロームの薄膜から成るフ
オトマスクを形成することとから成る基板の加工
が行なわれているが、近年フオトマスクに対して
は、益々、高精度微細なパターンを高能率、確実
に得られるものが要求され、このためには、フオ
トマスクのピンホール数は極力減らさねばならな
い。しかし乍ら、従来のガラス基板の上記加工法
では、検査基準以上のピンホールができ不合格品
が多く発生する傾向があり、上記要求を満足する
フオトフイルムを備えた基板を得ることは極めて
困難である。[Detailed Description of the Invention] Conventionally, photomasks used in the manufacture of semiconductor devices are manufactured by chamfering the edges of the glass substrate using a grindstone or the like, and by applying chromium or chromium oxide to the substrate surface. In recent years, there has been an increasing demand for photomasks that can reliably produce highly accurate, fine patterns with high efficiency. To achieve this, the number of pinholes in the photomask must be reduced as much as possible. However, the conventional glass substrate processing method described above tends to produce pinholes that exceed the inspection standards, resulting in many rejected products, and it is extremely difficult to obtain a substrate with a photo film that satisfies the above requirements. It is.
本発明は、かゝる基板加工に於いて生ずるピン
ホールの発生原因を究明し、これに基き、ピンホ
ールの発生が著しく減少することを目的としたフ
オトマスク基板の加工法を提供するもので、フオ
トマスク基板に面取り加工を行なう工程と該基板
面にフオトマスクを形成する工程とから成るフオ
トマスク基板の加工法に於て、該フオトフイルム
形成工程に先立ち、マイクロクラツクを構成する
多数の微細な突起を有する面取り加工面を被覆材
で被覆することを特徴とする。次に、本発明につ
き詳細に説明する。 The present invention investigates the causes of pinholes that occur during such substrate processing, and based on this, provides a photomask substrate processing method that aims to significantly reduce the occurrence of pinholes. In the photomask substrate processing method, which includes the steps of chamfering the photomask substrate and forming a photomask on the surface of the substrate, a large number of fine protrusions constituting microcracks are formed prior to the photofilm forming step. The chamfered surface is covered with a covering material. Next, the present invention will be explained in detail.
従来、カラス基板の四側面と上下面との角に面
取り加工を行ない、次で洗浄してフオトマスクを
形成すべき面を浄化後、フオトマスクを該面に形
成する基板加工が行なわれているが、フオトマス
クに基準以上のピンホールの数や大きさをもつも
のがしばしば発生した。本発明者は、この原因を
追究していたが、次の事実を知見した。即ち、該
ガラス基板に従来の方法で砥石を使用して面取り
加工すると該加工面には、砥石研摩により無数の
せん細なガラス突起によるマイクロクラツクが生
成していることが顕微鏡により観察されると共に
このマイクロクラツクを構成している微細なガラ
ス突起は、基板のフオトマスクを施す面を浄化す
るべく、充分な洗浄処理工程を経てさえ、残存す
るばかりか、その後の乾燥、運搬その他の取り扱
いの過程や被覆工程等においてこれら微細なガラ
ス突起は折損してその砕粉微片が基板の被覆処理
すべき面に転移存在する状態がつくり出される事
実が分り、これがピンホールを構成する1つの大
きい原因であることが判明した。本発明者はかゝ
る知見に基き、特にそのフオトマスク形成処理に
先立ち、かゝる破壊し易い微細なガラス突起の塗
膜による被覆処理を行なうときは、極めて著しく
ピンホールの生成を減少し得られ、従来に比し不
良品の発生の減少、従て、製品の歩溜りの著しい
向上をもたらすことを見出した。而してその塗膜
の被覆形成処理としては、面取り加工面に対し、
(i)ペースト、合成樹脂液等の塗布処理、(ii)金属又
は金属酸化物の蒸着による蒸着膜の形成処理、(iii)
別個に作成した被覆材による被覆処理等である。 Conventionally, substrate processing has been carried out by chamfering the four sides and the top and bottom corners of a glass substrate, then cleaning the surface on which a photomask is to be formed, and then forming a photomask on that surface. Photomasks often had pinholes that exceeded the standard in number and size. The inventor of the present invention has been investigating the cause of this problem and has discovered the following fact. That is, when the glass substrate is chamfered using a conventional method using a grindstone, it is observed with a microscope that microcracks due to countless fine glass protrusions are generated on the processed surface due to grinding with the grindstone. In addition, the fine glass protrusions that make up these microcracks not only remain even after a thorough cleaning process to purify the surface of the substrate on which the photomask is to be applied, but they also remain during subsequent drying, transportation, and other handling. It has been found that these minute glass protrusions are broken during the coating process, etc., and a state is created in which the crushed particles are transferred to the surface of the substrate to be coated, and this creates a large one that makes up the pinhole. It turned out to be the cause. Based on such knowledge, the present inventors have found that the formation of pinholes can be extremely significantly reduced, especially when coating such easily broken fine glass protrusions with a coating film prior to the photomask forming process. It has been found that this method reduces the number of defective products compared to the conventional method, and therefore significantly improves the product yield. As for the coating formation treatment of the coating film, on the chamfered surface,
(i) Application treatment of paste, synthetic resin liquid, etc., (ii) Formation treatment of vapor deposited film by vapor deposition of metal or metal oxide, (iii)
This includes coating treatment using a separately prepared coating material.
(i)の塗布処理は、ペーストや合成樹脂液の例え
ばシリコーンレジン、エポキシ系樹脂等の被覆塗
材を使用し、これを該面取り加工面全面に塗布、
乾燥し、該微細な無数のガラス突起面を被覆結着
する。(ii)の蒸着膜の形成は、クロム等の金属、金
属酸化物を適宜の真空蒸着装置により蒸着し、微
細なガラス突起を被覆する。 The coating process (i) uses a coating material such as paste or synthetic resin liquid, such as silicone resin or epoxy resin, and applies it to the entire surface of the chamfered surface.
After drying, the surfaces of the numerous fine glass protrusions are coated and bonded. In forming the deposited film (ii), a metal such as chromium or a metal oxide is deposited using an appropriate vacuum deposition apparatus to cover the fine glass protrusions.
(iii)の別個に作成した被覆材による被覆処理は、
別個に作成した板状、溝枠状等の成形被覆材を基
板の面取り加工面に不動に貼着し、或は着脱自在
に嵌合被覆することである。 (iii) Covering treatment with separately prepared covering material:
This means that a separately produced plate-shaped, groove-frame-shaped, etc.-shaped covering material is fixedly attached to the chamfered surface of the substrate, or is fitted and coated in a removable manner.
上記の被覆処理を行なつた後は、もはや微細な
突起は該被覆材によりその破壊による逸散移動は
防止されるので、その基板の表面にクローム及び
酸化クローム等の薄膜によるフオトマスクを形成
したとき、従来に比しピンホールの発生の全く或
は殆んどない良質の製品が歩溜まり良く得られ
る。 After the above-mentioned coating treatment is performed, the fine protrusions are prevented from escaping and moving due to breakage due to the coating material, so when a photomask made of a thin film of chromium or chromium oxide is formed on the surface of the substrate. Compared to the conventional method, high-quality products with no or almost no pinholes can be obtained at a higher yield.
従来の処理基板のピンホール数を100とすれば
本法処理基板を用いることによつてその数を20〜
30に減少させることが可能である。 If the number of pinholes on a conventionally treated substrate is 100, the number can be reduced to 20 to 20 by using a substrate treated with this method.
It is possible to reduce it to 30.
尚、上記消失処理後は、基板の洗浄処理を行な
うようにしてもよい。 Note that after the above-mentioned erasing process, the substrate may be cleaned.
図面で第1図は、本法の実施の1例により得ら
れた加工基板を示し、1はガラス基板、2はガラ
ス基板に従来のように砥石研摩による面取り加工
を施した後、塗膜形成処理してマイクロクラツク
を被覆保護する塗膜3を施された面取り加工面、
4はその表面に常法により施したクローム及び酸
化クロームから成る被膜のフオトマスクを示す。 In the drawings, Figure 1 shows processed substrates obtained by an example of implementing this method, 1 is a glass substrate, 2 is a glass substrate that has been chamfered by grinding with a grindstone as in the past, and then a coating film is formed. a chamfered surface treated with a coating film 3 that covers and protects microcracks;
4 shows a photomask with a coating made of chrome and chromium oxide applied on its surface by a conventional method.
第2図は、他の実施例を示し、基板1の周縁
に、第2図aに示す如き断面コ字状の嵌合溝5a
を有する長手の溝枠被覆材5を第2図bのように
嵌合する方法である。その材料としては、可撓性
の肉薄軟材料からなり、金、銅、純アルミニウ
ム、鉛、テフロン等の合成樹脂等であり、その可
撓弾性で密嵌し且つ取りはづれ可能とし、繰り返
し使用できるようにすることが好ましい。該溝枠
の幅は例えば基板厚さより0.1mm程度小さく形成
し着脱自在に密嵌し得るようにする。このように
着脱自在の被覆材型とすれば、繰り返し使用出
来、又取り扱い時の衝撃を緩和し、基板の縁破損
等を良好に保護し得られ、有利である。 FIG. 2 shows another embodiment, in which a fitting groove 5a having a U-shaped cross section as shown in FIG.
In this method, a longitudinal groove frame covering material 5 having a diameter is fitted as shown in FIG. 2b. The material is a flexible thin soft material such as gold, copper, pure aluminum, lead, synthetic resin such as Teflon, etc., and its flexible elasticity allows it to be tightly fitted and removed, and can be used repeatedly. It is preferable to make it possible. The width of the groove frame is, for example, approximately 0.1 mm smaller than the thickness of the substrate so that it can be removably fitted tightly. Such a removable coating type is advantageous because it can be used repeatedly, reduces impact during handling, and provides good protection against damage to the edges of the substrate.
このようにして得られた薄板基板には、高精度
微細パターンを高能率、確実になし得られ、シリ
コンウエハとの集積密度の拡大をもたらした。こ
のように本発明によるときは、基板の面取り加工
面にマイクロクラツク面に対し被覆処理を施した
後、その表面にフオトマスク加工を施すようにし
たので、そのフオトマスクに生ずるピンホールは
著しく減少し、製品の歩溜りを著しく向上し得ら
れ、高精度パターン、高集積半導体素子の製造に
適用し得る加工基板をもたらす効果を有する。 On the thus obtained thin plate substrate, a highly accurate fine pattern can be formed with high efficiency and reliability, resulting in an increase in the integration density with silicon wafers. In this way, according to the present invention, after coating the microcrack surface on the chamfered surface of the substrate, the photomask process is applied to that surface, so the pinholes generated in the photomask are significantly reduced. This has the effect of significantly improving product yield and producing a processed substrate that can be applied to the manufacture of high-precision patterns and highly integrated semiconductor devices.
第1図は本発明加工法の1例により得られたフ
オトフイルム基板の1部を截除した斜面図、第2
図aは他例に使用する被覆材の斜面図、第2図b
は他例の截断側面図を示す。
1……ガラス基板、2……面取り加工面、3…
…保護塗膜、4……フオトマスク、5……溝枠被
覆材。
Figure 1 is a partially cutaway perspective view of a photo film substrate obtained by one example of the processing method of the present invention;
Figure a is a slope view of the covering material used in another example, Figure 2 b
shows a cutaway side view of another example. 1... Glass substrate, 2... Chamfered surface, 3...
...Protective coating film, 4... Photomask, 5... Groove frame covering material.
Claims (1)
と、該基板面にフオトマスクを形成する工程とか
ら成るフオトマスク基板の加工法に於て、該フオ
トフイルム形成工程に先立ち、マイクロクラツク
を構成する多数の微細な突起を有する面取り加工
面を被覆材で被覆することを特徴とするフオトマ
スク基板の加工法。1. In a method of processing a photomask substrate, which consists of a step of chamfering a photomask substrate and a step of forming a photomask on the surface of the substrate, a large number of fine cracks constituting microcracks are formed prior to the photofilm forming step. A method for processing a photomask substrate, characterized in that a chamfered surface having protrusions is covered with a coating material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5569279A JPS55147629A (en) | 1979-05-09 | 1979-05-09 | Photomask substrate working method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5569279A JPS55147629A (en) | 1979-05-09 | 1979-05-09 | Photomask substrate working method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55147629A JPS55147629A (en) | 1980-11-17 |
JPS6140100B2 true JPS6140100B2 (en) | 1986-09-08 |
Family
ID=13005944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5569279A Granted JPS55147629A (en) | 1979-05-09 | 1979-05-09 | Photomask substrate working method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55147629A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005333124A (en) * | 2004-04-22 | 2005-12-02 | Asahi Glass Co Ltd | Low expansion glass substrate for reflection type mask and reflection type mask |
-
1979
- 1979-05-09 JP JP5569279A patent/JPS55147629A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS55147629A (en) | 1980-11-17 |
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