JPS58214154A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS58214154A JPS58214154A JP57098063A JP9806382A JPS58214154A JP S58214154 A JPS58214154 A JP S58214154A JP 57098063 A JP57098063 A JP 57098063A JP 9806382 A JP9806382 A JP 9806382A JP S58214154 A JPS58214154 A JP S58214154A
- Authority
- JP
- Japan
- Prior art keywords
- photomask
- thin film
- transparent
- ultraviolet light
- chromium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置の製造ｒ：、程中のフォトレジスト
工程に用いるフォトマスクに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask used in a photoresist process during the manufacture of semiconductor devices.
・１ｎ常、半導体装Ｉ４の喪造工程中のフォトレジスト
処理に用いるフォトマスクは紫外光を透過し１樟る透明
基板の一方の表面に感光剤の感光波長域の紫外光を線断
する目的で金属薄膜画像を形成させたフォトマスクをウ
ェハー上に形成された１１＆光剤イ皮考崖被１（４に密
層させて用いている。・Usually, the photomask used for photoresist processing during the molding process of semiconductor device I4 is used to transmit ultraviolet light and cut ultraviolet light in the wavelength range sensitive to the photosensitizer on one surface of the transparent substrate. A photomask with a metal thin film image formed thereon is used in a dense layer over a photomask 11 and a photoresist coating 1 (4) formed on a wafer.
第１図は、辿常のフォトマスクの１例の１所面図である
。FIG. 1 is a top view of an example of a conventional photomask.
例えば、紫外光を透過し得る透明基板としてガラス基板
１の一方の衣■に感光剤の感光波長域の紫外光を遮ｊ析
する金属薄膜としてクロム４ＩｌＩＡを形成させ公知の
７オトレジスト処理により、クロム薄１藺画鐵２を形成
したものである。For example, chromium 4IlIA is formed on one coating of the glass substrate 1, which is a transparent substrate that can transmit ultraviolet light, as a metal thin film that blocks ultraviolet light in the wavelength range sensitive to the photosensitizer, and then chromium It is made of thin 1-color painting iron 2.
ｌｌＪ記フォトマスクを半導体装置の＃造工程中のフォ
トレジスト処理に用いた場合、ウェハーとフォトマスク
の密着、−扼離を繰返すことにより、フォトマスク表面
に感光剤がイ」着したり、ウェハー表面上に在る半導体
製造工程中に発生した屑や、突起物により、ガラス基板
１０辰面に１易が生じたりクロム薄膜−ＩＩ！２の欠落
が生じる。その結果、製品良品率を低下させ或いはフォ
トマスクの寿命を短縮させる原因となる。これを防ぐた
めにフォトマスクを洗浄する必要が生じるが洗浄の際に
ガラス基板ｌの表面とクロム薄膜−Ｉ＃２とによって形
成される段部に汚れが堆積し、これを取り除くことがな
かなか難しく洗浄能率を低下させる原因となる。また、
ガラス基板１．０表面に生じた鴎やクロム薄膜層Ｉ＃２
の欠落は致命的なフォトマスクの欠陥となり、製品良品
率の低下を招くため、フォトマスクの交換を強いられる
ことになり、フォトマスクの消費量の増大につながる。When the photomask described in llJ is used for photoresist processing during the manufacturing process of semiconductor devices, repeated contact and separation between the wafer and the photomask may cause the photosensitive agent to adhere to the surface of the photomask or damage the wafer. Dust and protrusions generated during the semiconductor manufacturing process on the surface may cause scratches on the bottom surface of the glass substrate 10 or damage the chromium thin film-II! 2 is missing. As a result, this may cause a decrease in the quality of products or shorten the life of the photomask. To prevent this, it is necessary to clean the photomask, but during cleaning, dirt accumulates on the step formed by the surface of the glass substrate l and the chromium thin film -I#2, and it is difficult to remove it. This causes a decrease in efficiency. Also,
Seagulls and chromium thin film layer I#2 formed on the surface of glass substrate 1.0
Missing can be a fatal photomask defect, leading to a decrease in the quality of the product, forcing the photomask to be replaced, and leading to an increase in photomask consumption.
本発明け、フォトマスクの微細−Ｉ象の形成された側の
表面に１ｍ単な処理を施すことにより、フォトマスクの
洗浄能率の向上及び消費量の低減を提供するものである
。The present invention improves photomask cleaning efficiency and reduces consumption by performing a 1-meter treatment on the surface of the photomask on which the fine-I pattern is formed.
本発明によるフォトマスクは紫外光を透過し得る透明基
板の一方の表面及び同−而に形成された感光剤の感光波
長域の紫外光を遮ｌ析する金属薄膜画慮上に紫外光を透
過し得る透明薄膜層を形成させたことを特徴とする。The photomask according to the present invention has one surface of a transparent substrate that can transmit ultraviolet light, and a metal thin film that is formed at the same time to block ultraviolet light in the sensitive wavelength range of the photosensitizer, which transmits ultraviolet light. It is characterized by forming a transparent thin film layer.
以下、本発明を実施例により説明する。The present invention will be explained below using examples.
第２図は、本発明の１実、流刑によるフォトマスクの１
＠面図である。第２図に示すようにノ享さ２朋のガラス
安板１１の一方の表面に公知の蒸着法まを形成し、公知
の７オトレジスト処理により、所望のクロム傅嗅画鐵１
２を形成した鎌、該クロム薄膜層１象１２上及び前記ク
ロム４膜画１象１２を形成した同−而のカラス基板１１
の表向にプラズマ気相成長により１＋１えば、５０００
Ａのシリコン窒化膜層１３を形成する。この結果ガラス
基板１１の表面とクロム薄膜画像１２とによって形成さ
れる段部がなだらかＫなる。しかる後半導体製、癒工程
中のフォトレジスト処理に用いた場合尚該表圓はガラス
基板１１とクロム薄膜画家１２とによって形成される段
部がなだらかになっているのでウェハーとフォトマスク
の笛着、黍離を禰返すことによって、フォトマスクに付
着した感光剤を除去するための洗浄の際汚れが落ち易く
なる。また、ウェハー表面に在る屑や、突起物によって
、生じるガラス基板表面の傷や、クロム薄；漢画像の欠
落も透明薄膜層により、その発生を防ぐことができる。Figure 2 shows one of the fruits of the present invention, a photomask made by exile.
@ side view. As shown in FIG. 2, a known evaporation method is formed on one surface of the glass base plate 11, and a desired chrome plate 1 is formed by a known photoresist process.
2, the same glass substrate 11 on which the chromium thin film layer 1 image 12 and the chromium 4 film layer 1 image 12 were formed.
For example, 1+1, 5000 by plasma vapor phase growth on the surface of
A silicon nitride film layer 13 of A is formed. As a result, the step formed by the surface of the glass substrate 11 and the chromium thin film image 12 has a gentle slope. After that, when used for photoresist processing during the semiconductor manufacturing process, the surface area has a gentle step formed by the glass substrate 11 and the chrome thin film painter 12, so that the contact between the wafer and the photomask can be avoided. By removing the flakes, dirt can be easily removed during cleaning to remove the photosensitive agent adhering to the photomask. Furthermore, the transparent thin film layer can prevent scratches on the glass substrate surface and loss of chrome images caused by debris and protrusions on the wafer surface.
一方、透明４膜層に欠陥が生じた場合は加熱リン酸によ
り透明薄膜層をエツチング１余去し、再び形成し、フォ
トレジスト処理に１！２用することができる。On the other hand, if a defect occurs in the four transparent film layers, the transparent thin film layer can be removed by etching with heated phosphoric acid, formed again, and used for photoresist processing once or twice.
に記友流刑では、ガラス基板を透明基板の材料として用
いる場合を示したが、石英基板など蓄外光を透過するも
のであれば限定するものではない。In ``Kiyu Exile'', a case where a glass substrate is used as the material for the transparent substrate is shown, but it is not limited to any material that transmits external light, such as a quartz substrate.
また、金属薄、嗅の材料としてクロムを用いたが、藪化
クロムまたはクロムと酸化クロムの２層構造などのよう
に感光剤の感光波長域の紫外光を４断する材質であれば
特に限定しない。また、透明薄喚ｌ瘤の材料としてシリ
コン窒化膜を用いたが、シリコン１唆化嗅など、感光剤
の１光波長域の紫外光を透過し得る材質であれば特に限
定しない。In addition, although chromium was used as a metal thin material, it is particularly limited if it is a material that blocks ultraviolet light in the wavelength range sensitive to photosensitizers, such as chromium oxide or a two-layer structure of chromium and chromium oxide. do not. Further, although a silicon nitride film was used as the material for the transparent thin film, the material is not particularly limited as long as it can transmit ultraviolet light in one wavelength range of the photosensitizer, such as silicon nitride film.
以上詳細に説明したように本発明によるフォトマスクを
半導体装置の製造工程中のフォトレジスト処理に用いた
場合、フォトマスクの洗浄能率の向上及び消費量の低域
を計ることができる。As described above in detail, when the photomask according to the present invention is used for photoresist processing during the manufacturing process of semiconductor devices, it is possible to improve the cleaning efficiency of the photomask and reduce the amount consumed.
第１図は通常のフォトマスクのり１而図である。
Ｊ２図は本発明のＩ実ＩＭ列のフォトマスクの断面図で
ある。
なお図において、ｌ・・・・・・ガラス基板、２・・・
・・・クロム薄ｉ換画１ψ、１１・・・・・・ガラス基
板、２２・・・・・・りＯムｌ１１１に画＋１．１３・
・・・・・シリコン窒化１１〆、である。FIG. 1 is a diagram of a typical photomask glue. Figure J2 is a cross-sectional view of the photomask of the I-real IM array of the present invention. In the figure, l...Glass substrate, 2...
...Chrome thin i conversion image 1ψ, 11...Glass substrate, 22...
...Silicon nitride 11〆.
Claims (1)
光を遮断する金属薄膜ｕｌｌｉｉ’ｌが設けられ、核金
属ノ孝膜画障が設けられた側の前記遺明羞阪主表面上に
前記紫外光を透過する透明４模１−が設けられているこ
とを特徴とするフォトマスク。A thin metal film blocking ultraviolet light in the wavelength range to which the photosensitizer is sensitive is provided on all upper surfaces of the transparent substrate, and the main surface of the transparent substrate on the side where the nuclear metal film is provided. A photomask characterized in that a transparent pattern 1- that transmits the ultraviolet light is provided on top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098063A JPS58214154A (en) | 1982-06-08 | 1982-06-08 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57098063A JPS58214154A (en) | 1982-06-08 | 1982-06-08 | Photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58214154A true JPS58214154A (en) | 1983-12-13 |
Family
ID=14209863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57098063A Pending JPS58214154A (en) | 1982-06-08 | 1982-06-08 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58214154A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1168085A2 (en) * | 2000-06-19 | 2002-01-02 | Canon Kabushiki Kaisha | Reference plate for exposure apparatus |
-
1982
- 1982-06-08 JP JP57098063A patent/JPS58214154A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1168085A2 (en) * | 2000-06-19 | 2002-01-02 | Canon Kabushiki Kaisha | Reference plate for exposure apparatus |
| EP1168085A3 (en) * | 2000-06-19 | 2005-12-07 | Canon Kabushiki Kaisha | Reference plate for exposure apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4081314A (en) | Method of making a scratch-resistant mask for photolithographic processing | |
| TW200422771A (en) | Photomask blank and photomask | |
| JPS58214154A (en) | Photomask | |
| US3986876A (en) | Method for making a mask having a sloped relief | |
| EP1310827B1 (en) | Photomask with dust-proofing device and exposure method using the same | |
| JPH05107744A (en) | Method for removing foreign matter of photomask | |
| US20120154771A1 (en) | Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns | |
| JPS6087327A (en) | Preparation of chromium mask | |
| JPS5878151A (en) | Photomask | |
| JPS6218560A (en) | Photomask blank and photomask | |
| JP2004020710A (en) | Method for manufacturing optical element | |
| JPS6270849A (en) | Photomask bland and photomask | |
| JPH01167758A (en) | Photomask | |
| JPH04104153A (en) | Manufacture of mask | |
| US20050260503A1 (en) | Reticle film stabilizing method | |
| JPH1115141A (en) | Manufacture of mask substrate | |
| JPS61107350A (en) | Photomask blank and photomask | |
| JPS61267762A (en) | Production of photomask | |
| JPS6055344A (en) | Glass mask | |
| JPH03265121A (en) | Manufacture of semiconductor device | |
| JPH0350522Y2 (en) | ||
| JPH0551893B2 (en) | ||
| JPH0493943A (en) | Reticule | |
| JPS6140100B2 (en) | ||
| JPH04324445A (en) | Mask for exposing and production thereof |