JPS6139734B2 - - Google Patents
Info
- Publication number
- JPS6139734B2 JPS6139734B2 JP56013908A JP1390881A JPS6139734B2 JP S6139734 B2 JPS6139734 B2 JP S6139734B2 JP 56013908 A JP56013908 A JP 56013908A JP 1390881 A JP1390881 A JP 1390881A JP S6139734 B2 JPS6139734 B2 JP S6139734B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vacuum chuck
- semiconductor wafer
- wafer
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000853 adhesive Substances 0.000 claims description 43
- 230000001070 adhesive effect Effects 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 43
- 230000003028 elevating effect Effects 0.000 claims description 12
- 238000009423 ventilation Methods 0.000 claims description 9
- 235000012431 wafers Nutrition 0.000 description 62
- 239000004065 semiconductor Substances 0.000 description 52
- 239000000428 dust Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Jigs For Machine Tools (AREA)
Description
【発明の詳細な説明】
本発明は、ウエハ固定装置の真空チヤツク機構
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vacuum chuck mechanism for a wafer fixing device.
一般に半導体ウエハに所望のパターンを描画す
る電子ビーム露光装置は、電子ビーム露光装置に
設けられたウエハ固定装置の真空チヤツク機構に
より、パターン描画を施す半導体ウエハの平面度
を高精度に設定している。 Generally, an electron beam exposure system that draws a desired pattern on a semiconductor wafer uses a vacuum chuck mechanism of a wafer fixing device installed in the electron beam exposure system to highly accurately set the flatness of the semiconductor wafer on which the pattern is written. .
半導体ウエハの固定は、真空チヤツク機構に設
けられた平面度の高い基板上に接着剤を介して半
導体ウエハを吸引固着し、半導体ウエハの反りを
矯正するようにして行つている。而して、接着剤
で半導体ウエハを基板に固着する前に、高い平面
度で半導体ウエハを固着するために、基板及び半
導体ウエハにごみが付着していないかを半導体ウ
エハの平面度を測定することにより確認してい
る。 The semiconductor wafer is fixed by suctioning and fixing the semiconductor wafer via an adhesive onto a highly flat substrate provided in a vacuum chuck mechanism, thereby correcting the warpage of the semiconductor wafer. Therefore, before fixing the semiconductor wafer to the substrate with adhesive, in order to fix the semiconductor wafer with high flatness, the flatness of the semiconductor wafer is measured to see if there is any dust attached to the substrate and the semiconductor wafer. This has been confirmed by this.
この平面度の測定は、基板上に置かれた半導体
ウエハに所定間隔で基準鏡面体を載置して光学的
に干渉縞が発生するか否かによつて行つている。
半導体ウエハ上に基準鏡面体を載置するため半導
体ウエハの周囲にはその肉厚方向に沿う出張りが
ないことが望ましい。しかしながら、半導体ウエ
ハの周囲には、半導体ウエハを基板に対して正確
に位置付けるために位置決め部材が突設されてい
る。このため基準鏡面体の大きさを半導体ウエハ
よりも小さくして局部的に半導体ウエハの平面度
を測定している。このような局部的な平面度の測
定では高い精度が得られない。この欠点を解消す
るために基板の直下に肉厚の異なる２種類の接着
リングを介在させるようにして、厚肉の接着リン
グを基板の下に設けて位置決め部材よりも高い位
置に半導体ウエハを設置してその表面全面に障害
物がない状態のときに基準鏡面体を用いて平面度
の測定を行い、次いで、厚肉の接着リングを薄肉
の接着リングと交換して位置決め部材に半導体ウ
エハの周面が当接する高さに下げてから半導体ウ
エハを基板上の所定位置に固着することが行われ
ている。 This flatness measurement is performed by placing reference mirror bodies at predetermined intervals on a semiconductor wafer placed on a substrate and checking whether optical interference fringes are generated.
Since the reference mirror body is placed on the semiconductor wafer, it is desirable that there be no protrusion around the semiconductor wafer along its thickness direction. However, a positioning member is protruded around the semiconductor wafer in order to accurately position the semiconductor wafer with respect to the substrate. For this reason, the flatness of the semiconductor wafer is locally measured by making the size of the reference mirror smaller than the semiconductor wafer. High accuracy cannot be obtained by measuring such local flatness. In order to eliminate this drawback, two types of adhesive rings with different thicknesses are interposed directly under the substrate, and the semiconductor wafer is placed at a higher position than the positioning member by providing the thick adhesive ring under the substrate. Then, measure the flatness using a reference mirror when there are no obstacles on the entire surface, then replace the thick adhesive ring with a thin adhesive ring and attach the semiconductor wafer to the positioning member. The semiconductor wafer is lowered to a height such that the surfaces come into contact with each other, and then the semiconductor wafer is fixed at a predetermined position on the substrate.
しかしながら、厚肉の接着リングと薄肉の接着
リングを交換して半導体ウエハの平面度測定及び
所定位置への固着を行うものでは、接着リングの
交換作業を必要とし、作業が煩雑になる。また、
接着リングの交換作業中に半導体ウエハや基板に
ごみが付着する欠点がある。 However, when measuring the flatness of a semiconductor wafer and fixing it in a predetermined position by exchanging a thick adhesive ring and a thin adhesive ring, it is necessary to replace the adhesive ring, which makes the work complicated. Also,
There is a drawback that dust adheres to the semiconductor wafer or substrate during the replacement work of the adhesive ring.
本発明は、かかる点に鑑みてなされたもので、
簡単な操作で半導体ウエハおよび接着リングのご
みの付着の有無を正確に測定できるとともに、接
着リングの清掃などの取扱いが容易で半導体ウエ
ハを高い位置決め精度で基板上に容易に固着する
ことができるウエハ固定装置の真空チヤツク機構
を提供するものである。 The present invention has been made in view of these points,
A wafer that allows you to accurately measure the presence or absence of dust on semiconductor wafers and adhesive rings with simple operations, and also allows easy handling such as cleaning the adhesive ring, and allows you to easily fix semiconductor wafers on substrates with high positioning accuracy. A vacuum chuck mechanism for the fixation device is provided.
以下、本発明の実施例について図面を参照して
詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は、本発明の一実施例の断面図である。
図中１は、真空チヤツク台である。真空チヤツク
台１の中央部には凹所（以下、真空室という）２
が形成されている。真空室２の底部には昇降軸３
を挿入するため軸孔３ａが貫通されている。真空
チヤツク台１の底部にはその側部に設けられた真
空ポンプ４に接続する排気孔５が軸孔３ａに連通
するように形成されている。軸孔３ａには昇降軸
３が昇降自在に挿入されている。真空室２内に突
出した昇降軸３の先端部分には真空チヤツク部で
あるところの後述する接着リング６の支持台７が
形成されている。真空チヤツク台１の底部から外
部に突出した昇降軸３の下部には、偏心軸８の先
端に設けられた偏心ピン８ａが嵌入される溝９が
形成されている。偏心軸８は、真空チヤツク台１
の下部に突設された保持部１０に貫挿されてお
り、偏心軸８の後端部に設けられたレバー８ｂに
より２位置の間を自在に回転できるようになつて
いる。なお、昇降軸３と軸孔３ａの内壁面間に
は、Ｏ―リング１１が設けられており、真空室２
の気密が保たれるようになつている。また、昇降
軸３には、一方の開口端が排気孔５に連通し、他
方の開口端が後述する接着リング６の各通気孔１
４に接続可能になされると共に真空室２と連通す
る吸引孔１２が形成されている。 FIG. 1 is a sectional view of one embodiment of the present invention.
1 in the figure is a vacuum chuck stand. There is a recess (hereinafter referred to as a vacuum chamber) 2 in the center of the vacuum chuck stand 1.
is formed. At the bottom of the vacuum chamber 2 is an elevator shaft 3.
The shaft hole 3a is penetrated in order to insert the. An exhaust hole 5 connected to a vacuum pump 4 provided on the side thereof is formed in the bottom of the vacuum chuck stand 1 so as to communicate with the shaft hole 3a. An elevating shaft 3 is inserted into the shaft hole 3a so as to be movable up and down. At the tip of the lifting shaft 3 protruding into the vacuum chamber 2, there is formed a supporting base 7 for an adhesive ring 6, which will be described later, and which is a vacuum chuck portion. A groove 9 into which an eccentric pin 8a provided at the tip of an eccentric shaft 8 is inserted is formed in the lower part of the elevating shaft 3 which projects outward from the bottom of the vacuum chuck stand 1. The eccentric shaft 8 is connected to the vacuum chuck stand 1.
It is inserted through a holding part 10 that projects from the lower part of the eccentric shaft 8, and can be freely rotated between two positions by a lever 8b provided at the rear end of the eccentric shaft 8. Note that an O-ring 11 is provided between the elevator shaft 3 and the inner wall surface of the shaft hole 3a, and the vacuum chamber 2
airtightness is maintained. The lifting shaft 3 has one opening end communicating with the exhaust hole 5, and the other opening end communicating with each ventilation hole 1 of the adhesive ring 6, which will be described later.
4, and a suction hole 12 that communicates with the vacuum chamber 2 is formed.
真空室２の開口部には、鍔形の縁部１３の下面
で真空チヤツク台１上に保持され、かつその下面
を昇降軸３が第１図に示すように下降位置にある
とき、その先端面に所定間隔で対向するようにし
て接着リング６が設けられている。接着リング６
には、前記のように昇降軸３の吸引孔１２に連通
する通気孔１４が多数個形成されている。接着リ
ング６上には多数個の通気孔１５を有する基板１
６が、これらの通気孔１５を接着リング６の通気
孔１４に連通するようにして載置される。基板１
６上には、接着剤層１７を介して半導体ウエハ１
８が載置される。また、真空室２の開口部の近傍
の真空チヤツク台１上には基板位置決め部材１９
が立設され、この基板位置決め部材１９には基板
１６の周側面が当接されている。基板位置決め部
材１９の近傍には、これよりも突設高の高いウエ
ハ位置決め部材２０が設けられており、このウエ
ハ位置決め部材２０には、半導体ウエハ１８の周
側面が当接される。 At the opening of the vacuum chamber 2, the lower surface of the collar-shaped edge 13 is held on the vacuum chuck stand 1, and when the lower surface of the elevating shaft 3 is in the lowered position as shown in FIG. Adhesive rings 6 are provided facing the surface at predetermined intervals. Adhesive ring 6
As described above, there are formed a large number of ventilation holes 14 that communicate with the suction holes 12 of the lifting shaft 3. On the adhesive ring 6 is a substrate 1 having a large number of ventilation holes 15.
6 is placed such that these vent holes 15 are in communication with the vent holes 14 of the adhesive ring 6. Board 1
A semiconductor wafer 1 is placed on top of the semiconductor wafer 6 via an adhesive layer 17.
8 is placed. Further, a substrate positioning member 19 is placed on the vacuum chuck stand 1 near the opening of the vacuum chamber 2.
is erected, and the peripheral side surface of the substrate 16 is in contact with this substrate positioning member 19 . A wafer positioning member 20 having a higher protruding height than the substrate positioning member 19 is provided near the substrate positioning member 19, and the circumferential side of the semiconductor wafer 18 comes into contact with the wafer positioning member 20.
而して、このように構成されたウエハ固定装置
の真空チヤツク機構２１は、次のようにして半導
体ウエハ１８の平面度測定及び接着固定を行う。 The vacuum chuck mechanism 21 of the wafer fixing device thus constructed measures the flatness and adhesively fixes the semiconductor wafer 18 in the following manner.
まず、真空室２の開口部に接着リング６をその
鍔形の縁部１３の下面で真空チヤツク台１上に保
持されるように載置する。次いで、基板１６の周
側面を基板固定ブロツク１９に当接させてその通
気孔１５と接着リング６の通気孔１４とを連通す
るようにして、接着リング６上に基板１６を載置
する。この基板１６上に半導体ウエハ１８をその
周側面ウエハ位置決め部材２０に当接するように
して所定位置に設定する。 First, the adhesive ring 6 is placed in the opening of the vacuum chamber 2 so that it is held on the vacuum chuck stand 1 by the lower surface of its brim-shaped edge 13. Next, the substrate 16 is placed on the adhesive ring 6 with the circumferential side of the substrate 16 in contact with the substrate fixing block 19 so that the ventilation hole 15 of the substrate 16 communicates with the ventilation hole 14 of the adhesive ring 6. A semiconductor wafer 18 is set at a predetermined position on this substrate 16 so as to come into contact with the wafer positioning member 20 on its peripheral side.
半導体ウエハ１８、基板１６、接着リング６を
所定位置に設定した後、真空ポンプ４により排気
孔５、吸引孔１２を介して真空室２内を減圧状態
にする。真空室２の開口部は、接着リング６によ
つて塞がれており、昇降軸３が挿入された軸孔３
ａもＯ―リング１１で気密状態になつているの
で、真空ポンプ４を作動することによつて真空室
２内に容易に減圧状態にすることができる。真空
室２が減圧状態になるとこれに連通する接着リン
グ６及び基板１６の通気孔１４，１５内も減圧状
態になるので、半導体ウエハ１８、基板１６及び
接着リング６は所定位置に設定された状態で一体
に固着される。 After the semiconductor wafer 18, substrate 16, and adhesive ring 6 are set at predetermined positions, the vacuum chamber 2 is brought into a reduced pressure state by the vacuum pump 4 through the exhaust hole 5 and the suction hole 12. The opening of the vacuum chamber 2 is closed with an adhesive ring 6, and the shaft hole 3 into which the lifting shaft 3 is inserted is closed.
Since a is also in an airtight state with an O-ring 11, the pressure inside the vacuum chamber 2 can be easily reduced by operating the vacuum pump 4. When the pressure in the vacuum chamber 2 is reduced, the pressure in the adhesive ring 6 and the vent holes 14 and 15 of the substrate 16 that communicate with it are also reduced, so that the semiconductor wafer 18, the substrate 16, and the adhesive ring 6 are set at predetermined positions. are fixed together.
然る後、第２図に示す如く、レバー８ａを回わ
して偏心軸８を回転させ、嵌入穴９に嵌入された
偏心ピン８ａで昇降軸３を押し上げる。昇降軸３
は上昇してその先端部の支持台７で接着リング６
の下面を支持する。接着リング６と支持台７と
は、気密に接続されるとともに、昇降軸３の吸引
孔１２と接着リング６及び基板１６の通気孔１
４，１５が連通されるので、所定位置に設定され
た状態で一体に固着された半導体ウエハ１８、基
板１６及び接着リング６の固着状態をくずすこと
なくこれに昇降軸３が一体に接続される。このよ
うに一体に固着された状態で半導体ウエハ１８を
位置決め部材２０よりも上方に押し上げて半導体
ウエハ１８の表面よりも上方に障害物がない状態
にする。この状態で半導体ウエハ１８上に基準鏡
面体２２を半導体ウエハ１８の表面全面に亘つて
所定の間隔が保たれるように載置し、光学的な干
渉縞の発生の有無により半導体ウエハ１８の平面
度を測定して半導体ウエハ１８及び基板１６にご
みが付着しているか否かを確認する。ごみが付着
している場合にはこれを除去した後に、またごみ
が付着していない場合には、直に偏心軸８を逆回
転させて昇降軸３を降下し、接着リング６と昇降
軸３を分離して接着リング６を真空チヤツク台１
上に保持させ、真空ポンプ４の作動を停止して真
空室２内の減圧状態を解除してから、半導体ウエ
ハ１８を基板１６から分離してこれらの間に接着
剤層１７を形成して半導体ウエハ１８と基板１６
とを一体に固着せしめる。これらの接着の際に
は、半導体ウエハ１８は位置決め部材２０に接触
して所定位置にあり、基板１６は基板固定ブロツ
ク１９に接触して所定位置にある。しかも、半導
体ウエハ１８の平面度測定のための昇降操作の際
においても、両者は所定位置に正しく設定された
状態で固定されているので、極めて高い位置精度
で基板１６上に半導体ウエハ１８を固着すること
ができる。また、半導体ウエハ１８の平面度の測
定は、周囲に障害物が無い状態で半導体ウエハ１
８の表面全面を利用して行うので、高い精度で行
うことができる。その結果、ごみの付着の有無を
正確に知ることができる。また、平面度測定の際
の昇降操作中は、半導体ウエハ１８、基板１６、
接着リング６及び昇降軸３が一体に固着されてい
るので接着リング６の交換作業を不要にすること
は勿論、その際に発生し易いごみの付着を防止す
ることができる。また、接着リング６の設定位置
が正しいか否かを、真空チヤツク台１上に面シー
ルしつつ接着リング６を保持せしめているため真
空ポンプ４の真空度から知ることができ、半導体
ウエハ１８、基板１６及び接着リング６の厚さ方
向の位置決めを正確に行うことができる。また、
昇降軸３の昇降操作も極めて容易であり、接着リ
ング６の清掃や基板１６および半導体ウエハ１８
の厚さ変更などに伴なう接着リング６の交換も極
めて容易である。 Thereafter, as shown in FIG. 2, the lever 8a is turned to rotate the eccentric shaft 8, and the elevator shaft 3 is pushed up by the eccentric pin 8a fitted into the insertion hole 9. Lifting axis 3
rises and attaches the adhesive ring 6 to the support base 7 at its tip.
supports the bottom surface of the The adhesive ring 6 and the support base 7 are connected airtightly, and the suction hole 12 of the lifting shaft 3 and the ventilation hole 1 of the adhesive ring 6 and the substrate 16 are connected to each other in an airtight manner.
4 and 15 are in communication with each other, the lifting shaft 3 can be integrally connected to the semiconductor wafer 18, the substrate 16, and the adhesive ring 6, which are fixed at a predetermined position, without breaking the fixed state. . In this manner, the semiconductor wafer 18 is pushed up above the positioning member 20 while being fixed together, so that there are no obstacles above the surface of the semiconductor wafer 18. In this state, the reference mirror body 22 is placed on the semiconductor wafer 18 so that a predetermined interval is maintained over the entire surface of the semiconductor wafer 18, and the plane of the semiconductor wafer 18 is determined depending on whether or not optical interference fringes occur. The temperature is measured to confirm whether or not dust is attached to the semiconductor wafer 18 and the substrate 16. If there is dust on it, remove it, or if there is no dust on it, immediately rotate the eccentric shaft 8 in the opposite direction to lower the lifting shaft 3, and then remove the adhesive ring 6 and the lifting shaft 3. Separate and attach the adhesive ring 6 to the vacuum chuck stand 1.
After stopping the operation of the vacuum pump 4 and releasing the reduced pressure state in the vacuum chamber 2, the semiconductor wafer 18 is separated from the substrate 16, and an adhesive layer 17 is formed between them. Wafer 18 and substrate 16
and are fixed together. During these bonding operations, the semiconductor wafer 18 is in contact with the positioning member 20 in a predetermined position, and the substrate 16 is in contact with a substrate fixing block 19 in a predetermined position. Moreover, even when the semiconductor wafer 18 is lifted and lowered to measure the flatness of the semiconductor wafer 18, both of them are fixed in the predetermined position in a correctly set state, so the semiconductor wafer 18 is fixed on the substrate 16 with extremely high positional accuracy. can do. Further, the flatness of the semiconductor wafer 18 is measured with the semiconductor wafer 18 in a state where there are no obstacles around it.
Since the entire surface of 8 is used, it can be performed with high accuracy. As a result, it is possible to accurately know whether or not dust is attached. Also, during the lifting and lowering operation during flatness measurement, the semiconductor wafer 18, the substrate 16,
Since the adhesive ring 6 and the lifting shaft 3 are fixed together, it is not only unnecessary to replace the adhesive ring 6, but also to prevent the adhesion of dust that is likely to occur at that time. Further, since the adhesive ring 6 is held while being sealed on the vacuum chuck stand 1, it is possible to know whether the setting position of the adhesive ring 6 is correct from the degree of vacuum of the vacuum pump 4. The substrate 16 and the adhesive ring 6 can be accurately positioned in the thickness direction. Also,
The lifting and lowering operation of the lifting shaft 3 is extremely easy, and cleaning of the adhesive ring 6 and cleaning of the substrate 16 and semiconductor wafer 18 are extremely easy.
It is also extremely easy to replace the adhesive ring 6 when the thickness of the adhesive ring 6 is changed.
以上説明した如く、本発明に係るウエハ固定装
置の真空チヤツク機構は、簡単な操作で半導体ウ
エハ及び基板を所定の設定状態に保つて接着固定
位置から平面度の測定位置へ容易に移動せしめて
ごみの付着の有無を正確に測定できるとともに、
半導体ウエハを基板上に高い位置決め精度で固着
でき、接着リングの清掃や取替えが簡単で保守が
容易にできる等顕著な効果を有するものである。 As explained above, the vacuum chuck mechanism of the wafer fixing device according to the present invention allows semiconductor wafers and substrates to be easily moved from the bonding and fixing position to the flatness measurement position by a simple operation while keeping the semiconductor wafer and substrate in a predetermined setting state. In addition to being able to accurately measure the presence or absence of adhesion,
This method has remarkable effects such as being able to fix the semiconductor wafer onto the substrate with high positioning accuracy, making cleaning and replacing the adhesive ring easy, and making maintenance easy.
第１図は、本発明の一実施例を用いて基板に半
導体ウエハを固着している状態を示す断面図、第
２図は、同実施例を用いて平面度を測定している
状態を示す断面図である。
１…真空チヤツク台、２…真空室、３…昇降
軸、３ａ…軸孔、４…真空ポンプ、５…排気孔、
６…接着リング、７…支持台、８…偏心軸、９…
嵌入穴、１０…保持部、１１…Ｏ―リング、１２
…吸引孔、１３…縁部、１４，１５…通気孔、１
６…接着リング、１７…接着剤層、１８…半導体
ウエハ、１９…基板固定ブロツク、２０…位置決
め部材、２１…ウエハ固定装置の真空チヤツク機
構、２２…基準鏡面体。
FIG. 1 is a cross-sectional view showing a state in which a semiconductor wafer is fixed to a substrate using an embodiment of the present invention, and FIG. 2 shows a state in which flatness is measured using the same embodiment. FIG. 1...Vacuum bench, 2...Vacuum chamber, 3...Elevating shaft, 3a...Shaft hole, 4...Vacuum pump, 5...Exhaust hole,
6... Adhesive ring, 7... Support stand, 8... Eccentric shaft, 9...
Fitting hole, 10... Holding part, 11... O-ring, 12
...suction hole, 13...edge, 14,15...ventilation hole, 1
6... Adhesive ring, 17... Adhesive layer, 18... Semiconductor wafer, 19... Substrate fixing block, 20... Positioning member, 21 ... Vacuum chuck mechanism of wafer fixing device, 22... Reference mirror object.
Claims (1)
載置し、該基板およびウエハをこれらの側面に当
接する位置決め部材にて位置決めしつつ真空チヤ
ツクするウエハ固定装置の真空チヤツク機構にお
いて、上部を開口した凹所を有する真空チヤツク
台と、前記凹所の底部を気密に貫通して前記真空
チヤツク台に昇降自在に設けられた昇降軸と、同
昇降軸の上端に一方の開口端を有して他方の開口
端を前記昇降軸の移動を許す適宜な排気流路を介
して真空ポンプに連通するように該昇降軸に形成
された吸引孔と、前記昇降軸を所定量上下動させ
るための昇降手段と、前記真空チヤツク台の凹所
を被い該凹所の周囲で気密に支持されるように載
置され、上下に貫通する多数の通気孔を有し、上
面に前記基板およびウエハを載置し、下面は前記
昇降軸の上下動によつて前記昇降軸の上端に接離
可能に形成され、接触状態にあつては前記吸引孔
と前記多数の通気孔とを外気に対して気密に連通
可能になされると共に離間状態にあつては前記凹
所内を減圧可能にした接着リングとを具備するこ
とを特徴とするウエハ固定装置の真空チヤツク機
構。1. In a vacuum chuck mechanism of a wafer fixing device, a wafer is placed on a substrate placed on a vacuum chuck, and the vacuum chuck is performed while positioning the substrate and wafer with a positioning member that contacts the side surfaces thereof. a vacuum chuck stand having a recess, an elevating shaft that airtightly penetrates the bottom of the recess and is provided in the vacuum chuck stand so that it can be raised and lowered, and the elevating shaft has one open end at the upper end thereof. a suction hole formed in the elevating shaft so that the other open end communicates with a vacuum pump via an appropriate exhaust flow path that allows movement of the elevating shaft; and an elevating hole for vertically moving the elevating shaft by a predetermined amount. means, which is placed so as to cover the recess of the vacuum chuck table and to be airtightly supported around the recess, has a number of ventilation holes passing through it vertically, and has the substrate and wafer placed on the upper surface. The lower surface is formed so as to be able to come into contact with and separate from the upper end of the elevating shaft by vertical movement of the elevating shaft, and when in contact, the suction hole and the plurality of ventilation holes are airtight from the outside air. 1. A vacuum chuck mechanism for a wafer fixing device, characterized in that the adhesive ring is configured to be able to communicate with each other and is capable of evacuating the pressure inside the recess when the recess is in a separated state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56013908A JPS57128939A (en) | 1981-02-02 | 1981-02-02 | Vacuum chuck mechanism of wafer fixing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56013908A JPS57128939A (en) | 1981-02-02 | 1981-02-02 | Vacuum chuck mechanism of wafer fixing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57128939A JPS57128939A (en) | 1982-08-10 |
| JPS6139734B2 true JPS6139734B2 (en) | 1986-09-05 |
Family
ID=11846265
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56013908A Granted JPS57128939A (en) | 1981-02-02 | 1981-02-02 | Vacuum chuck mechanism of wafer fixing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57128939A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63201250A (en) * | 1987-02-13 | 1988-08-19 | 積水化学工業株式会社 | Eaves structure |
| JPH02240354A (en) * | 1989-03-14 | 1990-09-25 | Sekisui Chem Co Ltd | Eaves structure |
| JPH02240356A (en) * | 1989-03-14 | 1990-09-25 | Sekisui Chem Co Ltd | Eaves structure |
| JPH02240357A (en) * | 1989-03-14 | 1990-09-25 | Sekisui Chem Co Ltd | Eaves structure |
| JPH0437723U (en) * | 1990-07-25 | 1992-03-30 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59191344A (en) * | 1983-04-14 | 1984-10-30 | Toshiba Corp | Jig for thin plate attachment |
| CN102005395B (en) * | 2009-08-31 | 2013-03-06 | 日立设备工程股份有限公司 | Vacuum mounting method and device |
| JP5920058B2 (en) * | 2012-06-29 | 2016-05-18 | 日本精工株式会社 | Spindle device, and machine tool and semiconductor manufacturing apparatus equipped with the same |
-
1981
- 1981-02-02 JP JP56013908A patent/JPS57128939A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63201250A (en) * | 1987-02-13 | 1988-08-19 | 積水化学工業株式会社 | Eaves structure |
| JPH02240354A (en) * | 1989-03-14 | 1990-09-25 | Sekisui Chem Co Ltd | Eaves structure |
| JPH02240356A (en) * | 1989-03-14 | 1990-09-25 | Sekisui Chem Co Ltd | Eaves structure |
| JPH02240357A (en) * | 1989-03-14 | 1990-09-25 | Sekisui Chem Co Ltd | Eaves structure |
| JPH0437723U (en) * | 1990-07-25 | 1992-03-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57128939A (en) | 1982-08-10 |
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