JP2000223388A - Stage and aligner - Google Patents

Stage and aligner

Info

Publication number
JP2000223388A
JP2000223388A JP11022758A JP2275899A JP2000223388A JP 2000223388 A JP2000223388 A JP 2000223388A JP 11022758 A JP11022758 A JP 11022758A JP 2275899 A JP2275899 A JP 2275899A JP 2000223388 A JP2000223388 A JP 2000223388A
Authority
JP
Japan
Prior art keywords
substrate
stage
pressure
support
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11022758A
Other languages
Japanese (ja)
Inventor
Iwao Tokawa
巌 東川
Suigen Kiyou
帥現 姜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11022758A priority Critical patent/JP2000223388A/en
Publication of JP2000223388A publication Critical patent/JP2000223388A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PROBLEM TO BE SOLVED: To drastically suppress positional accuracy variation due to substrate deformation by providing correcting means for loading one surface of the substrate and correcting the surface shape of the substrate. SOLUTION: Suction holes 21 of a support 2 are set to a negative pressure for sucking a substrate 50 at the top end of the support 2, a vacuum seal 22 is set to a negative pressure to suck and support the back surface of the substrate 50, a controller 9 closes a valve 7 and opens a valve 8, to make the support point surface flush with a reference with a pressure adjusting hollow 3 held open, a height-measuring unit 10 measures the surface height of the substrate 50, the valve 8 is closed, the valve 7 is opened gradually to apply a pressure to the pressure adjusting hollow 3, the height-measuring unit 10 measures the height variation of the substrate 50, the controller 9 makes fine adjustment of the valves 7, 8 to fix the pressure in the hollow 3. Then the substrate 50 surface is corrected. As a result, the positional accuracy variation due to the substrate deformation is suppressed drastically.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、リソグラフィ技術
に係り、特に感光性材料の塗布膜が設けられた被露光基
板を載置するステージ及びこのステージを用いた露光装
置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lithography technique, and more particularly, to a stage on which a substrate to be exposed provided with a coating film of a photosensitive material is mounted and an exposure apparatus using the stage.

【0002】[0002]

【従来の技術】露光装置を用いて基板上にレジストパタ
ーンを形成する従来からのリソグラフィ技術では、感光
材料の塗布膜が設けられた被露光基板表面の形状が露光
工程毎に変形するため、パターンの位置精度が低下する
という問題が発生している。
2. Description of the Related Art In a conventional lithography technique in which a resist pattern is formed on a substrate using an exposure apparatus, the shape of the surface of a substrate to be exposed provided with a coating film of a photosensitive material is deformed in each exposure process. However, there is a problem that the positional accuracy is deteriorated.

【0003】この被露光基板の変形は、例えばシリコン
ウェハーを露光装置のウェハーステージにチャックする
場合、チャック面に真空吸着されることにより、チャッ
ク面の形状に基板の裏面が接触し、チャック面に倣う様
に変形するために発生している。
For example, when a silicon wafer is chucked on a wafer stage of an exposure apparatus, the back surface of the substrate comes into contact with the shape of the chuck surface when the silicon wafer is chucked on a wafer stage of the exposure apparatus. This is caused by deformation to imitate.

【0004】シリコンウェハー用のチャックは、頂部で
接触面を形成する凸部と、真空吸着を行なう溝部で構成
されて、凸部は円環を同心円状に配置している。
[0004] A chuck for a silicon wafer is composed of a convex portion that forms a contact surface at the top and a groove portion that performs vacuum suction, and the convex portion has a ring arranged concentrically.

【0005】フォトマスク基板の如く厚い基板の場合、
裏面チャック時の変形に伴なう表面のパターン位置のシ
フト量は、シリコン基板等の比較的厚さの無い基板に比
べて更に増大していることが知られている。
In the case of a thick substrate such as a photomask substrate,
It is known that the shift amount of the pattern position on the front surface due to the deformation at the time of back surface chucking is further increased as compared with a relatively thin substrate such as a silicon substrate.

【0006】その為、フォトマスクの露光装置やパター
ン位置の測定装置においては、基板の支持を三点のポイ
ントで実施して自重撓みのみで変形させることにより、
露光工程毎の基板表面の形状の変形の再現性を改善する
方法が知られ、可能な場合には、変形量に基づき位置座
標を補正して露光を行っている。
Therefore, in a photomask exposure apparatus and a pattern position measuring apparatus, the substrate is supported at three points and deformed only by its own weight deflection.
There is known a method for improving the reproducibility of the deformation of the shape of the substrate surface in each exposure step. When possible, exposure is performed by correcting the position coordinates based on the deformation amount.

【0007】しかしながら、基板を固定支持し、且つス
テージの移動を高速で行なう為には、十分な摩擦を確保
する必要がある。その為、非常に固い材料を用いて点支
持を行なったり、点支持部の周囲に、柔軟な真空チャッ
ク面を用意する技術も開発されている。特開平5−28
3511号には、微小先端の三点で吸着し、十分な摩擦
力を確保する技術が提案されている。結果として基板を
自重撓みのみの変形に保持することが可能になる。
However, in order to fix and support the substrate and to move the stage at high speed, it is necessary to secure sufficient friction. For this reason, techniques for performing point support using a very hard material and preparing a flexible vacuum chuck surface around the point support portion have been developed. JP-A-5-28
No. 3511 proposes a technique for adsorbing at three points of a minute tip to secure a sufficient frictional force. As a result, it is possible to hold the substrate in a deformation caused only by its own weight.

【0008】[0008]

【発明が解決しようとする課題】ところで、フォトマス
クの場合は、マスクの作製時と、原版として露光装置で
用いる場合とで姿勢差が発生する問題が指摘されてい
る。通常、マスク製作時は遮光膜面を上にして保持し、
露光装置の原版として用いる場合は、遮光膜面を下にし
て保持する。その上、露光装置の原版として用いる場合
は遮光膜パターン面を真空チャックで保持する。
By the way, in the case of a photomask, it has been pointed out that a difference in attitude occurs between when the mask is manufactured and when it is used as an original in an exposure apparatus. Normally, when making the mask, hold the light-shielding film surface up,
When used as an original for an exposure apparatus, the light-shielding film is held face down. In addition, when used as an original for an exposure apparatus, the light-shielding film pattern surface is held by a vacuum chuck.

【0009】その結果、マスクの作製時と露光装置の原
版として用いる場合とで基板が異なった変形を起こし、
パターン位置が移動するという問題がある。これらの位
置精度の問題は、フォトマスクの様に口径が大きく、重
量があり、且つ、厚い基板で、表面及び裏面の平面精度
が確保し難い場合に顕著となる傾向にある。
As a result, the substrate is deformed differently between when the mask is manufactured and when it is used as an original for an exposure apparatus,
There is a problem that the pattern position moves. These problems of positional accuracy tend to be significant when a large-diameter, heavy-weight and thick substrate, such as a photomask, is difficult to secure the planar accuracy of the front and back surfaces.

【0010】ここで、基板には反りや曲がりや厚さ斑が
有り、平行度、平面度は個々の基板で異なっている。従
って、上記のような三点支持を行っても、基板が異なっ
た変形状態で、即ち、歪んだ状態で露光、或いはパター
ン位置の計測が施される結果、位置精度に誤差が生じて
正確な値が得られないという問題があり、結果として、
素子製造等において、十分な位置精度が得られないとい
う問題があった。
[0010] Here, the substrate has warpage, bending, and uneven thickness, and the parallelism and flatness are different for each substrate. Therefore, even if the above-described three-point support is performed, exposure or measurement of the pattern position is performed in a different deformed state of the substrate, that is, in a distorted state. There is a problem that the value can not be obtained, as a result,
There has been a problem that sufficient positional accuracy cannot be obtained in element manufacturing or the like.

【0011】本発明は、上述の如き従来の課題を解決す
るためになされたもので、その目的は、基板の接触面の
面精度に制約されることがなく、基板の姿勢を一意的に
定めて支持でき、且つ基板変形に伴う位置精度のバラツ
キを著しく抑制することができるステージ及びこのステ
ージを用いた露光装置を提供することである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and has as its object to uniquely determine the attitude of a substrate without being restricted by the surface accuracy of the contact surface of the substrate. It is an object of the present invention to provide a stage which can be supported and supported, and which can significantly suppress the variation in the positional accuracy due to the deformation of the substrate, and an exposure apparatus using this stage.

【0012】[0012]

【課題を解決するための手段】上記目的を達成するため
に、請求項1の発明の特徴は、基板を支持部で支持する
ことによりその姿勢を一意的に定めて保持するステージ
において、前記基板の一方の面に負荷を与える補正手段
を備え、前記基板の表面形状を補正することにある。
According to a first aspect of the present invention, there is provided a stage for supporting a substrate by a supporting portion to uniquely determine and hold the posture of the substrate. A correcting means for applying a load to one surface of the substrate, and correcting the surface shape of the substrate.

【0013】この請求項1の発明によれば、前記基板の
支持面に、気体、液体、或いは軟質素材を介して負荷を
与えることにより、前記基板の平面度のバラツキや自重
による撓み等の変形を補正することができる。これによ
り、前記基板がフォトマスクブランクス等であった場
合、フォトマスクブランクスの変形が補正された状態で
露光を行なったり、或いはパターン位置の測定を行うこ
とができ、基板変形に伴う位置精度のバラツキを著しく
抑制することができる。
According to the first aspect of the present invention, by applying a load to the support surface of the substrate via a gas, a liquid, or a soft material, the substrate is deformed due to unevenness in flatness or deflection due to its own weight. Can be corrected. Thus, when the substrate is a photomask blank or the like, exposure or measurement of the pattern position can be performed in a state where the deformation of the photomask blank has been corrected, and the positional accuracy variation due to the substrate deformation can be achieved. Can be significantly suppressed.

【0014】請求項2の発明の特徴は、前記基板の支持
側の面に前記補正手段により負荷を与えて前記基板の自
重撓みを矯正することにより、その表面形状を補正する
ことにある。
A feature of the invention according to claim 2 is that the surface shape of the substrate is corrected by applying a load to the support-side surface of the substrate by the correcting means to correct the self-weight deflection of the substrate.

【0015】請求項3の発明の前記補正手段は、基板の
一方の面と、相対する面との間に差圧を発生させる機構
を具備する。
According to a third aspect of the present invention, the correcting means includes a mechanism for generating a pressure difference between one surface of the substrate and an opposing surface.

【0016】請求項4の発明の前記支持部は前記基板の
支持面を吸着する吸着手段を具備する。
According to a fourth aspect of the present invention, the supporting portion includes an adsorbing means for adsorbing the supporting surface of the substrate.

【0017】請求項5の発明の前記補正手段は、空洞を
気密に覆う軟質材の膜で形成され、当該補正手段の一面
を前記基板の支持面に密着するように配置した後、前記
空洞内の圧力を調整することにより、前記基板の表面形
状を補正する。
According to a fifth aspect of the present invention, the correcting means is formed of a film of a soft material which hermetically covers the cavity. By adjusting the pressure, the surface shape of the substrate is corrected.

【0018】請求項6の発明の前記補正手段は、前記基
板の支持面側に形成される気密空間であり、この空間の
圧力を調整することにより、前記基板の表面形状を補正
する。
According to a sixth aspect of the present invention, the correcting means is an airtight space formed on the support surface side of the substrate, and corrects the surface shape of the substrate by adjusting the pressure in this space.

【0019】請求項7の発明の特徴は、前記基板の平面
度を測定する測定手段と、前記空洞又は前記空間内の圧
力を調整するガス給排気手段と、前記測定手段の測定結
果により前記ガス給排気手段を制御して前記空洞又は前
記空間の圧力を調整する制御手段を具備することにあ
る。
A feature of the invention according to claim 7 is that a measuring means for measuring the flatness of the substrate, a gas supply / exhaust means for adjusting a pressure in the cavity or the space, and the gas supply means based on a measurement result of the measuring means. A control means for controlling the air supply / exhaust means to adjust the pressure in the cavity or the space is provided.

【0020】請求項8の発明の特徴は、ステージ上に感
光性材料膜を有する被露光基板を保持し、前記基板上の
感光性材料膜にパターン露光を行なう露光装置におい
て、前記ステージとして請求項1乃至7いずれかに記載
のステージを搭載し、このステージにより前記被露光基
板の裏面に負荷を与えて、前記基板表面の形状を補正し
た後、前記基板上の感光性材料膜にパターン露光を行な
うことにある。
According to an eighth aspect of the present invention, there is provided an exposure apparatus for holding a substrate to be exposed having a photosensitive material film on a stage and performing pattern exposure on the photosensitive material film on the substrate. The stage according to any one of 1 to 7 is mounted, and a load is applied to the back surface of the substrate to be exposed by the stage to correct the shape of the substrate surface, and then the photosensitive material film on the substrate is subjected to pattern exposure. To do.

【0021】請求項9の発明の前記ステージに備えられ
ている補正手段は前記被露光基板を透過してきた光の反
射を防止する手段を備えている。
According to a ninth aspect of the present invention, the correction means provided on the stage has a means for preventing reflection of light transmitted through the substrate to be exposed.

【0022】[0022]

【発明の実施の形態】以下、本発明の実施の形態を図面
に基づいて説明する。図1は本発明のステージの第1の
実施の形態を示した断面図である。ステージ1は4角形
状をしており、ステージ1の上面が平坦でその周囲に側
面を形成する囲み部が設けられ、囲みの上方が開いてい
る。このステージ1の上面及び前記囲みの内側にゴムな
どの軟質材の膜で形成された圧力調整空洞3が収容され
ている。この圧力調整空洞3の上部のゴムなどの軟質材
の膜は後述するが、基板50の裏面に密着している。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing a first embodiment of the stage of the present invention. The stage 1 has a quadrangular shape, an upper surface of the stage 1 is flat, and a surrounding portion forming a side surface is provided around the upper surface of the stage 1, and the upper part of the surrounding is open. A pressure adjusting cavity 3 formed of a film of a soft material such as rubber is accommodated on the upper surface of the stage 1 and inside the enclosure. The film of a soft material such as rubber on the upper part of the pressure adjusting cavity 3 is in close contact with the back surface of the substrate 50, as described later.

【0023】又、ステージ1には、中央に吸入孔21を
有する三個の支持部2が貫通し、更に、圧力調整空洞3
を貫通し、その先端は圧力調整空洞3の上面部を貫通し
て基板50の裏面に接している。
The stage 1 is penetrated by three support portions 2 having a suction hole 21 at the center.
, And its tip penetrates the upper surface of the pressure adjusting cavity 3 and contacts the back surface of the substrate 50.

【0024】又、圧力調整空洞3はガス流路5と連通し
ており、このガス流路5はステージ1を貫通し、その外
側で配管6に接続されている。この配管6は窒素ガスを
供給するガス圧力源11に接続され、その途中にガス注
入用のバルブ7とガス排気用のバルブ8が設けられてい
る。
The pressure adjusting cavity 3 communicates with a gas flow path 5, which passes through the stage 1 and is connected to a pipe 6 outside the stage 1. The pipe 6 is connected to a gas pressure source 11 for supplying nitrogen gas, and a gas injection valve 7 and a gas exhaust valve 8 are provided on the way.

【0025】これらバルブ7とガス排気用のバルブ8は
制御部9によりその開閉が制御される。この制御部9
は、圧力調整空洞3の上に載置されたフォトマスクブラ
ンクスなどの基板50の平面度を検出する高さ測定装置
10の測定結果により、バルブ7とバルブ8の開閉制御
を行う。
The opening and closing of the valve 7 and the gas exhaust valve 8 are controlled by a control unit 9. This control unit 9
Controls the opening and closing of the valves 7 and 8 based on the measurement result of the height measuring device 10 for detecting the flatness of the substrate 50 such as a photomask blank placed on the pressure adjusting cavity 3.

【0026】図3は図1の円で示した部分の拡大断面図
である。又、図4は上記基板50に密着している軟質材
の表面の詳細を示した平面図である。
FIG. 3 is an enlarged sectional view of a portion shown by a circle in FIG. FIG. 4 is a plan view showing details of the surface of the soft material that is in close contact with the substrate 50.

【0027】次に本実施の形態の動作について説明す
る。露光装置は、i線の縮小露光型の逐次露光装置に本
例のステージ1を搭載したもので、ステップアンドリピ
ートと称される逐次露光処理を行なう。被露光基板50
は、HOYA社製の6025と呼ばれるフォトマスクブ
ランクスでクロム面にフォトレジストを0.5μm膜厚
に塗布し、ソフトベーキング処理をおこなったもので、
まず、露光装置のステージ上に移載される。
Next, the operation of this embodiment will be described. The exposure apparatus is one in which the stage 1 of the present embodiment is mounted on an i-line reduction exposure type sequential exposure apparatus, and performs a sequential exposure process called step-and-repeat. Exposed substrate 50
Is a photomask blank called No. 6025 manufactured by HOYA Co., Ltd., which is obtained by applying a photoresist to a chromium surface to a thickness of 0.5 μm and performing a soft baking process.
First, it is mounted on a stage of an exposure apparatus.

【0028】基板50は上記したステージの支持部2の
先端の支持点20で図4の如く支持される。
The substrate 50 is supported at the support point 20 at the tip of the support section 2 of the stage as shown in FIG.

【0029】図5(A)はステージ1の吸着部分の断面
図、図5(B)は吸着部分である支持部2の先端の拡大
断面図である。支持部2の先端の周囲には軟質ゴム膜製
の真空封止部22が設けられており、支持部2の吸入孔
21を負圧にして、この支持部2の先端により基板50
を吸着(第1の吸着)することと、前記吸入孔21を負
圧にすることによって、前記軟質ゴム膜の内側、即ち真
空封止部22も負圧にして、基板50の裏面(支持面に
同じ)を吸着(第2の吸着)して支持する。こうして、
基板50の裏面は、3個の支持部2で高さと位置が一意
的に決められる。
FIG. 5A is a cross-sectional view of a suction portion of the stage 1, and FIG. 5B is an enlarged cross-sectional view of a tip of a support portion 2 which is a suction portion. A vacuum sealing portion 22 made of a soft rubber film is provided around the tip of the support portion 2, and the suction hole 21 of the support portion 2 is set to a negative pressure.
Is sucked (first suction), and the suction hole 21 is set to a negative pressure, so that the inside of the soft rubber film, that is, the vacuum sealing portion 22 is also set to a negative pressure. Is adsorbed (second adsorption) and supported. Thus,
The height and position of the back surface of the substrate 50 are uniquely determined by the three support portions 2.

【0030】上記三点における支持部2は例えば、1m
mの内径と2mmの外径を有し、内部に前記吸入孔21
が形成されている。また、真空封止部22は2mmの外
径に接して軟質ゴム膜より形成されている。軟質ゴム膜
は3mmの厚さで、支持部2の凸部の頂部には軟質ゴム
は無い。
The support 2 at the above three points is, for example, 1 m
m and an outer diameter of 2 mm.
Are formed. The vacuum sealing portion 22 is formed of a soft rubber film in contact with an outer diameter of 2 mm. The soft rubber film has a thickness of 3 mm, and there is no soft rubber on the top of the convex portion of the support 2.

【0031】三点において、基板50への接触部分は円
筒形状で、端部はラウンドが付けられ、接触面積を低減
し、その周囲に上記した前記真空封止部22が配置さ
れ、第2の吸着を行なっている。
At three points, the contact portion to the substrate 50 is cylindrical, the end is rounded to reduce the contact area, and the above-mentioned vacuum sealing portion 22 is disposed around the periphery thereof, Adsorption is being performed.

【0032】第2の吸着は前記三点の真空吸着に対して
その吸着力を半減させ、大気圧のほぼ中間で吸着してい
る。また、図6(B)に示すように、基板50の裏面の
周囲5mm及び四隅10mmを除いた部分には、前記圧
力調整空洞3の上部を形成する1mm厚の軟質ゴム膜が
密着していている。
In the second suction, the suction force is reduced by half with respect to the vacuum suction at the three points, and the suction is performed at almost the middle of the atmospheric pressure. As shown in FIG. 6 (B), a 1 mm thick soft rubber film forming the upper part of the pressure adjusting cavity 3 is in close contact with a portion except for a periphery of 5 mm and four corners of 10 mm on the back surface of the substrate 50. I have.

【0033】この軟質ゴム膜の基板50側には凹凸が設
けられている。軟質ゴム膜の端部は、基板50の周囲5
mmで図6(A)の如き形状を有し、より厚い軟質ゴム
枠に固定されて、圧力調整空洞3を構成している。
The soft rubber film is provided with irregularities on the substrate 50 side. The end of the soft rubber film is
It has a shape as shown in FIG. 6A in mm and is fixed to a thicker soft rubber frame to form the pressure adjusting cavity 3.

【0034】次に基板50の平面度を調整する動作につ
いて説明する。制御部9は、まず、バルブ7を閉め、バ
ルブ8を開けることにより、圧力調整空洞3を大気に直
結し、開放した状態で支持点20の表面を基準と同一の
高さにする。次いで、露光装置のオートフォーカス系を
用いた高さ測定装置10により、基板50の表面の高さ
を3mm間隔で測定する。
Next, the operation of adjusting the flatness of the substrate 50 will be described. The control unit 9 first closes the valve 7 and opens the valve 8 to directly connect the pressure adjusting cavity 3 to the atmosphere, and sets the surface of the support point 20 to the same height as the reference in the open state. Next, the height of the surface of the substrate 50 is measured at 3 mm intervals by the height measuring device 10 using the autofocus system of the exposure device.

【0035】次いで、制御部9はバルブ8を閉め、バル
ブ7を徐々に開けて圧力調整空洞3に大気圧に対して余
圧を付加し、高さ測定装置10により基板50の高さの
変動を測定する。この高さの測定値は制御部9に入力さ
れるため、基板50の中央の表面の高さが約0.6μm
上昇したところで、制御部9はバルブ7、バルブ8を微
調整して圧力調整空洞3内の圧力を固定する。
Next, the control unit 9 closes the valve 8, gradually opens the valve 7 to apply an extra pressure to the pressure adjusting cavity 3 with respect to the atmospheric pressure, and uses the height measuring device 10 to change the height of the substrate 50. Is measured. Since the measured value of this height is input to the control unit 9, the height of the central surface of the substrate 50 is about 0.6 μm.
When it rises, the control unit 9 finely adjusts the valves 7 and 8 to fix the pressure in the pressure adjustment cavity 3.

【0036】その後、再度高さ測定装置10により、基
板表面全面の高さを測定し、高さの差異が基板50の周
囲10mmを除いた領域で、0.55μmに入っている
ことを確認する。この結果、高さの分布には特に中央部
分で自重に伴なうと考えられる凹部は認められなかっ
た。
Thereafter, the height of the entire surface of the substrate is measured again by the height measuring device 10, and it is confirmed that the difference in height is within 0.55 μm in a region excluding 10 mm around the substrate 50. . As a result, in the height distribution, no concave portion considered to be associated with its own weight was found particularly in the central portion.

【0037】次いで、基板50の周囲15mmを除いた
領域、即ち120mm角の領域に、20mm角の露光を
36回繰り返して実施した。
Next, a 20 mm square exposure was repeated 36 times in a region excluding 15 mm around the substrate 50, that is, in a 120 mm square region.

【0038】ステージ1の移動は、基板50の位置ずれ
を防ぐ為に0.12Gの加速度以下で移動するように設
定した。100℃、10分のポストベーキング処理を行
なった後、基板50が室温に戻ったことを確認し、基板
50をスプレー現像装置にセットし、フルコーンノズル
から23℃に温調した現像液(AD−10多摩化学製)
をスプレーし、100rpmで回転させて、75秒の現
像を行い、直ちに、超純水にてリンス処理を行なった。
The stage 1 was set so as to move at an acceleration of 0.12 G or less in order to prevent the displacement of the substrate 50. After performing post-baking at 100 ° C. for 10 minutes, it was confirmed that the substrate 50 had returned to room temperature. The substrate 50 was set in a spray developing device, and a developer (AD) controlled at 23 ° C. from a full cone nozzle was used. -10 Tama Chemical)
Was sprayed, rotated at 100 rpm, and developed for 75 seconds, and immediately rinsed with ultrapure water.

【0039】次いで、10℃、20分のベーキング処理
を行なった後、平行平板型のドライエッチングにて、ウ
エットエアーを用いるプラズマデスカム処理を行なっ
た。エッチングは75Wで3分行い、この処理により、
レジスト膜厚は、約0.03μm減少した。次いで、塩
素と酸素の混合ガスを用いてクロムを主成分とする約
0.1μm膜厚の遮光膜のエッチングを20分行なっ
た。RFの反射波強度のモニターからJust+35%のエ
ッチングであった。
Next, after performing baking treatment at 10 ° C. for 20 minutes, plasma descum treatment using wet air was performed by parallel plate type dry etching. Etching is performed at 75 W for 3 minutes.
The resist film thickness decreased by about 0.03 μm. Then, using a mixed gas of chlorine and oxygen, the light-shielding film containing chromium as a main component and having a thickness of about 0.1 μm was etched for 20 minutes. From the monitor of the RF reflected wave intensity, the etching was Just + 35%.

【0040】レジストを除去後、共焦点型の顕微鏡にて
設計データが0.8μmのスペースパターンの寸法測定
を実施した。寸法測定は、同一のポイントを8回測定
し、データの信頼性を確認した。上記36ショットで各
9箇所の寸法は、平均値で0.832μmで、バラツキ
は16nm(3σ)で、最大値と最小値の差は23nm
であった。
After the resist was removed, the dimension of a space pattern whose design data was 0.8 μm was measured with a confocal microscope. In the dimension measurement, the same point was measured eight times, and the reliability of the data was confirmed. The size of each of the nine locations in the 36 shots is 0.832 μm on average, the variation is 16 nm (3σ), and the difference between the maximum value and the minimum value is 23 nm.
Met.

【0041】次いで、パターンの位置精度を測定した。
測定は、ライカ社製のLMS−iPRO測定器を用いて
実施した。120mm角の領域で5mm間隔で測定し
た。パターン位置には、x方向、y方向の倍率エラーが
0.1ppm以下と認められたが、基板50の変形に伴
なうと考えられる歪みは、1/5以下に低減され、12
0mm角の領域で、±3nm以下になっていることが確
認された。
Next, the positional accuracy of the pattern was measured.
The measurement was performed using a Leica LMS-iPRO measuring device. The measurement was performed at 5 mm intervals in a 120 mm square area. At the pattern position, the magnification error in the x direction and the y direction was recognized to be 0.1 ppm or less, but the distortion considered to be caused by the deformation of the substrate 50 was reduced to 1/5 or less, and 12
It was confirmed that it was ± 3 nm or less in a 0 mm square area.

【0042】本実施の形態によれば、ステージ1の3個
の支持部2で、基板50を三点支持し、その後、圧力調
整空洞3を介して、基板50の片面に負荷を与えて、そ
の表面形状を補正することができるため、基板50の変
形に伴なうと考えられる歪みは、従来の1/5以下に低
減することができる。これにより、露光工程毎に基板5
0が変形することが防止され、パターンの位置精度を向
上させることができるため、素子製造時などに十分な位
置精度を確保することができる。
According to the present embodiment, the substrate 50 is supported at three points by the three support portions 2 of the stage 1, and then a load is applied to one surface of the substrate 50 via the pressure adjusting cavity 3. Since the surface shape can be corrected, the distortion that is considered to be caused by the deformation of the substrate 50 can be reduced to 1/5 or less of the related art. This allows the substrate 5 to be
Since 0 is prevented from being deformed and the positional accuracy of the pattern can be improved, sufficient positional accuracy can be ensured at the time of element manufacture or the like.

【0043】図7は本発明のステージの第2の実施の形
態を示した断面図である。但し、図1に示した第1の実
施の形態と同一部分には同一符号を付し、且つその説明
を適宜省略する。本例のステージ1は図の如く凹状に形
成されており、この凹状の側面に図8に示すように軟質
ゴムのOリング81と、これを支持する側面支持部82
により構成された真空吸着部83が形成されている。
FIG. 7 is a sectional view showing a stage according to a second embodiment of the present invention. However, the same portions as those of the first embodiment shown in FIG. 1 are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. The stage 1 of the present embodiment is formed in a concave shape as shown in the figure, and an O-ring 81 of soft rubber and a side support portion 82 for supporting the O-ring 81 as shown in FIG.
Is formed.

【0044】側面支持部82は管状部を有し、この側面
管状部82が前記凹状の側面を貫通し、外部に出てい
る。基板50は前記第1の実施の形態と同様の支持部2
により三点支持された後、軟質ゴムのOリング81によ
りその側面が接触され、支持部82の管状部を負圧にす
ることにより、基板50の側面を固定化する。
The side supporting portion 82 has a tubular portion, and the side tubular portion 82 penetrates the concave side surface and projects to the outside. The substrate 50 has the same support portion 2 as in the first embodiment.
After being supported at three points, the side surface of the substrate 50 is brought into contact with the O-ring 81 made of soft rubber, and the tubular portion of the support portion 82 is set to a negative pressure, thereby fixing the side surface of the substrate 50.

【0045】これにより、ステージ1の凹状部と基板5
0の支持面により圧力調整空洞3が形成される。また、
基板50の裏面は直接、圧力調整空洞3の雰囲気に晒さ
れている。更に、圧力調整空洞部3の内部は、フォトマ
スクブランクス等の基板50を透過する露光光が反射す
ることを防ぐ目的で黒く塗装してある。
Thus, the concave portion of the stage 1 and the substrate 5
The zero support surface forms a pressure regulating cavity 3. Also,
The back surface of the substrate 50 is directly exposed to the atmosphere of the pressure adjusting cavity 3. Further, the inside of the pressure adjusting cavity 3 is painted black in order to prevent the exposure light transmitted through the substrate 50 such as a photomask blank from being reflected.

【0046】圧力調整空洞3には図示していないが前記
第1の実施の形態と同様のガス流路が形成され、圧力調
整空洞3内の圧力を調整できるようになっている。
Although not shown, a gas flow path similar to that of the first embodiment is formed in the pressure adjusting cavity 3 so that the pressure in the pressure adjusting cavity 3 can be adjusted.

【0047】次に本実施の形態の動作について説明す
る。基板50をステージの凹状部に装着し、図8に示し
た真空吸着部83を負圧にすることによって、軟質ゴム
のOリング81によりシールされ、基板50は側面支持
部82に真空吸着される。
Next, the operation of this embodiment will be described. The substrate 50 is mounted on the concave portion of the stage, and the vacuum suction portion 83 shown in FIG. 8 is set to a negative pressure, whereby the substrate 50 is sealed by the soft rubber O-ring 81, and the substrate 50 is suctioned by the side support portion 82. .

【0048】上記のように基板50をステージ1上に保
持し、基板の表面形状を補正して露光を行なった。基板
50の保持にあたっては、図8の真空吸着部83を、一
旦大気圧に対して50%以下まで減圧し、真空保持を確
認した後、5%まで戻して保持した。これにより、ステ
ージ1の凹状部と基板50で形成された圧力調整空洞3
が密閉される。
As described above, the substrate 50 was held on the stage 1, and the exposure was performed while correcting the surface shape of the substrate. In holding the substrate 50, the vacuum suction unit 83 in FIG. 8 was once reduced to 50% or less of the atmospheric pressure, and after confirming that the vacuum was held, returned to 5% and held. Thereby, the pressure adjusting cavity 3 formed by the concave portion of the stage 1 and the substrate 50
Is sealed.

【0049】次に露光に際しては、圧力調整空洞3を若
干の余圧にして、基板の周辺10mmを除いた領域で表
面の高さが0.6μm以内に入っていることを基板50
の表面の高さ測定から確認した。
Next, at the time of exposure, the pressure adjusting cavity 3 is set to have a slight excess pressure, and it is determined that the surface height is within 0.6 μm in the region excluding the periphery of the substrate 10 mm.
Was confirmed from the surface height measurement.

【0050】露光後パターンの現像、エッチング処理を
行ないパターン位置精度を測定した。パターンの位置精
度は、ライカ社製のLMS−iPRO測定器を用いて実
施した。パターン位置には三点支持固有の歪みは低減さ
れ、前記実施の形態と同様に120mm角の領域で、基
板の変形に伴なうと考えられる位置精度のバラツキは、
±3nm以下になっていた。
The pattern after exposure was developed and etched to measure the pattern position accuracy. The positional accuracy of the pattern was measured using an LMS-iPRO measuring device manufactured by Leica. Distortion inherent in three-point support is reduced in the pattern position, and in a region of 120 mm square as in the above-described embodiment, the variation in positional accuracy considered to accompany the deformation of the substrate is as follows:
It was less than ± 3 nm.

【0051】本実施の形態も図1に示した第1の実施の
形態と同様で、同様の効果を得ることができる。
This embodiment is similar to the first embodiment shown in FIG. 1 and can obtain the same effects.

【0052】[0052]

【発明の効果】以上詳細に説明したように、本発明によ
れば、基板の接触面の平面度に制約されることがなく、
基板の姿勢を一意的に定めて支持することができ、基板
の変形に伴なう位置精度のバラツキを著しく抑制するこ
とができる。
As described in detail above, according to the present invention, the flatness of the contact surface of the substrate is not restricted.
The orientation of the substrate can be uniquely determined and supported, and the variation in positional accuracy accompanying the deformation of the substrate can be significantly suppressed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のステージの第1の実施の形態を示した
断面図である。
FIG. 1 is a sectional view showing a stage according to a first embodiment of the present invention.

【図2】図1の円で示した部分の拡大断面図である。FIG. 2 is an enlarged sectional view of a portion shown by a circle in FIG.

【図3】図2に示した軟質ゴム膜の平面図である。FIG. 3 is a plan view of the soft rubber film shown in FIG.

【図4】図1に示した基板の支持点を示した平面図であ
る。
FIG. 4 is a plan view showing support points of the substrate shown in FIG. 1;

【図5】図1に示した基板の支持点と、この支持点を吸
着する支持部先端の拡大断面図である。
FIG. 5 is an enlarged cross-sectional view of a support point of the substrate shown in FIG. 1 and a front end of a support portion that adsorbs the support point.

【図6】図1に示したステージの圧力調整空洞を余圧し
て基板の平面度の調整動作を説明する断面図と平面図で
ある。
FIGS. 6A and 6B are a cross-sectional view and a plan view illustrating an operation of adjusting flatness of a substrate by applying extra pressure to a pressure adjusting cavity of the stage shown in FIG. 1;

【図7】本発明のステージの第2の実施の形態を示した
断面図である。
FIG. 7 is a sectional view illustrating a stage according to a second embodiment of the present invention.

【図8】図7に示した真空吸着部の拡大断面図である。8 is an enlarged cross-sectional view of the vacuum suction unit shown in FIG.

【符号の説明】[Explanation of symbols]

1 ステージ 2 支持部 3 圧力調整空洞 4 軟質ゴム膜 5 ガス流路 6 配管 7、8 バルブ 9 制御部 10 高さ測定装置 11 ガス圧力源 20 支持点 21 吸入孔 22 真空封止部 50 基板 81 Oリング 82 側面支持部 83 真空吸着部 DESCRIPTION OF SYMBOLS 1 Stage 2 Support part 3 Pressure adjustment cavity 4 Soft rubber film 5 Gas flow path 6 Piping 7, 8 Valve 9 Control part 10 Height measuring device 11 Gas pressure source 20 Support point 21 Suction hole 22 Vacuum sealing part 50 Substrate 81 O Ring 82 Side support part 83 Vacuum suction part

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 基板を支持部で支持することによりその
姿勢を一意的に定めて保持するステージにおいて、 前記基板の一方の面に負荷を与える補正手段を備え、 前記基板の表面形状を補正することを特徴とするステー
ジ。
1. A stage for supporting a substrate by a supporting portion to uniquely determine and hold the posture of the substrate, comprising: a correction unit configured to apply a load to one surface of the substrate, and correcting a surface shape of the substrate. A stage characterized by that.
【請求項2】 前記基板の支持側の面に前記補正手段に
より負荷を与えて前記基板の自重撓みを矯正することに
より、その表面形状を補正することを特徴とする請求項
1記載のステージ。
2. The stage according to claim 1, wherein a surface shape of the substrate is corrected by applying a load to the support-side surface of the substrate by the correction means to correct the deflection of the substrate by its own weight.
【請求項3】 前記補正手段は、基板の一方の面と、相
対する面との間に差圧を発生させる機構を具備すること
を特徴とする請求項1又は2記載のステージ。
3. The stage according to claim 1, wherein the correction means includes a mechanism for generating a pressure difference between one surface of the substrate and an opposing surface.
【請求項4】 前記支持部は前記基板の支持面を吸着す
る吸着手段を具備することを特徴とする請求項1乃至3
いずれかに記載のステージ。
4. The apparatus according to claim 1, wherein said support section includes a suction means for suctioning a support surface of said substrate.
Stage described in either.
【請求項5】 前記補正手段は、空洞を気密に覆う軟質
材の膜で形成され、当該補正手段の一面を前記基板の支
持面に密着するように配置した後、前記空洞内の圧力を
調整することにより、前記基板の表面形状を補正するこ
とを特徴とする請求項1又は2記載のステージ。
5. The correction means is formed of a film of a soft material which hermetically covers the cavity, and after arranging one surface of the correction means so as to be in close contact with the support surface of the substrate, adjusts the pressure in the cavity. 3. The stage according to claim 1, wherein the surface shape of the substrate is corrected.
【請求項6】 前記補正手段は、前記基板の支持面側に
形成される気密空間であり、この空間の圧力を調整する
ことにより、前記基板の表面形状を補正することを特徴
とする請求項1又は2記載のステージ。
6. The correction means is an airtight space formed on the support surface side of the substrate, and corrects a surface shape of the substrate by adjusting a pressure in this space. Stage according to 1 or 2.
【請求項7】 前記基板の平面度を測定する測定手段
と、 前記空洞又は前記空間内の圧力を調整するガス給排気手
段と、 前記測定手段の測定結果により前記ガス給排気手段を制
御して前記空洞又は前記空間の圧力を調整する制御手段
を具備することを特徴とする請求項5又は6記載のステ
ージ。
7. A measuring means for measuring the flatness of the substrate; a gas supply / exhaust means for adjusting the pressure in the cavity or the space; and controlling the gas supply / exhaust means based on a measurement result of the measurement means. 7. The stage according to claim 5, further comprising control means for adjusting a pressure in the cavity or the space.
【請求項8】 ステージ上に感光性材料膜を有する被露
光基板を保持し、前記基板上の感光性材料膜にパターン
露光を行なう露光装置において、 前記ステージとして請求項1乃至7いずれかに記載のス
テージを搭載し、 このステージにより前記被露光基板の裏面に負荷を与え
て、前記基板表面の形状を補正した後、前記基板上の感
光性材料膜にパターン露光を行なうことを特徴とする露
光装置。
8. An exposure apparatus for holding a substrate to be exposed having a photosensitive material film on a stage and performing pattern exposure on the photosensitive material film on the substrate, wherein the stage is used as the stage. Mounting a stage on the substrate, applying a load to the back surface of the substrate to be exposed by the stage, correcting the shape of the substrate surface, and then performing pattern exposure on a photosensitive material film on the substrate. apparatus.
【請求項9】 前記ステージに備えられている補正手段
は前記被露光基板を透過してきた光の反射を防止する手
段を備えたことを特徴とする請求項8記載の露光装置。
9. An exposure apparatus according to claim 8, wherein said correction means provided on said stage includes means for preventing reflection of light transmitted through said substrate to be exposed.
JP11022758A 1999-01-29 1999-01-29 Stage and aligner Pending JP2000223388A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
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Publication Number Publication Date
JP2000223388A true JP2000223388A (en) 2000-08-11

Family

ID=12091594

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Link
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003021513A (en) * 2001-07-09 2003-01-24 Tokyo Seimitsu Co Ltd Device and method for surface shape measurement
JP2007081450A (en) * 2006-12-26 2007-03-29 Dainippon Printing Co Ltd Work stage of aligner and exposure method
WO2009151984A2 (en) * 2008-06-09 2009-12-17 Kla-Tencor Corporation Referenced inspection device
WO2011121868A1 (en) * 2010-03-31 2011-10-06 株式会社 日立ハイテクノロジーズ Substrate holding apparatus, substrate holding method, and inspecting apparatus and inspecting method using the substrate holding apparatus and the substrate holding method
CN113660849A (en) * 2021-08-13 2021-11-16 大唐互联科技(武汉)有限公司 SMT (surface mount technology) chip mounting equipment based on industrial Internet and using method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003021513A (en) * 2001-07-09 2003-01-24 Tokyo Seimitsu Co Ltd Device and method for surface shape measurement
JP2007081450A (en) * 2006-12-26 2007-03-29 Dainippon Printing Co Ltd Work stage of aligner and exposure method
WO2009151984A2 (en) * 2008-06-09 2009-12-17 Kla-Tencor Corporation Referenced inspection device
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