JPS6137710B2 - - Google Patents
Info
- Publication number
- JPS6137710B2 JPS6137710B2 JP57199098A JP19909882A JPS6137710B2 JP S6137710 B2 JPS6137710 B2 JP S6137710B2 JP 57199098 A JP57199098 A JP 57199098A JP 19909882 A JP19909882 A JP 19909882A JP S6137710 B2 JPS6137710 B2 JP S6137710B2
- Authority
- JP
- Japan
- Prior art keywords
- cell
- line
- digit line
- potential
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims 1
- 241000723353 Chrysanthemum Species 0.000 description 21
- 235000005633 Chrysanthemum balsamita Nutrition 0.000 description 21
- 239000010408 film Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 238000003860 storage Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199098A JPS5891596A (ja) | 1982-11-15 | 1982-11-15 | ダイナミツク型半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57199098A JPS5891596A (ja) | 1982-11-15 | 1982-11-15 | ダイナミツク型半導体記憶装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6721678A Division JPS54158828A (en) | 1978-06-06 | 1978-06-06 | Dynamic type semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5891596A JPS5891596A (ja) | 1983-05-31 |
| JPS6137710B2 true JPS6137710B2 (enrdf_load_stackoverflow) | 1986-08-25 |
Family
ID=16402085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57199098A Granted JPS5891596A (ja) | 1982-11-15 | 1982-11-15 | ダイナミツク型半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5891596A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02247892A (ja) * | 1989-03-20 | 1990-10-03 | Fujitsu Ltd | ダイナミックランダムアクセスメモリ |
| US6515902B1 (en) * | 2001-06-04 | 2003-02-04 | Advanced Micro Devices, Inc. | Method and apparatus for boosting bitlines for low VCC read |
-
1982
- 1982-11-15 JP JP57199098A patent/JPS5891596A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5891596A (ja) | 1983-05-31 |
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