JPS6135707B2 - - Google Patents
Info
- Publication number
- JPS6135707B2 JPS6135707B2 JP51081541A JP8154176A JPS6135707B2 JP S6135707 B2 JPS6135707 B2 JP S6135707B2 JP 51081541 A JP51081541 A JP 51081541A JP 8154176 A JP8154176 A JP 8154176A JP S6135707 B2 JPS6135707 B2 JP S6135707B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- silicon
- oxide film
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8154176A JPS536580A (en) | 1976-07-08 | 1976-07-08 | Integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8154176A JPS536580A (en) | 1976-07-08 | 1976-07-08 | Integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS536580A JPS536580A (en) | 1978-01-21 |
| JPS6135707B2 true JPS6135707B2 (OSRAM) | 1986-08-14 |
Family
ID=13749148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8154176A Granted JPS536580A (en) | 1976-07-08 | 1976-07-08 | Integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS536580A (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111786A (en) * | 1978-02-21 | 1979-09-01 | Nec Corp | Manufacture for complementary silicon gate mos field effect semiconductor device |
-
1976
- 1976-07-08 JP JP8154176A patent/JPS536580A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS536580A (en) | 1978-01-21 |
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