JPS6134269B2 - - Google Patents

Info

Publication number
JPS6134269B2
JPS6134269B2 JP2339180A JP2339180A JPS6134269B2 JP S6134269 B2 JPS6134269 B2 JP S6134269B2 JP 2339180 A JP2339180 A JP 2339180A JP 2339180 A JP2339180 A JP 2339180A JP S6134269 B2 JPS6134269 B2 JP S6134269B2
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
type
electrode
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2339180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56120176A (en
Inventor
Noburo Yasuda
Masato Yamashita
Yasuhisa Oana
Norio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2339180A priority Critical patent/JPS56120176A/ja
Priority to EP81100621A priority patent/EP0035118B1/en
Priority to DE8181100621T priority patent/DE3172935D1/de
Priority to US06/230,679 priority patent/US4447825A/en
Publication of JPS56120176A publication Critical patent/JPS56120176A/ja
Publication of JPS6134269B2 publication Critical patent/JPS6134269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/03Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • H10H20/824Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
JP2339180A 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method Granted JPS56120176A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2339180A JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method
EP81100621A EP0035118B1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same
DE8181100621T DE3172935D1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same
US06/230,679 US4447825A (en) 1980-02-28 1981-02-02 III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2339180A JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Publications (2)

Publication Number Publication Date
JPS56120176A JPS56120176A (en) 1981-09-21
JPS6134269B2 true JPS6134269B2 (enrdf_load_stackoverflow) 1986-08-06

Family

ID=12109204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2339180A Granted JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Country Status (1)

Country Link
JP (1) JPS56120176A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159626A (ja) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPS56120176A (en) 1981-09-21

Similar Documents

Publication Publication Date Title
JP2803742B2 (ja) 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
KR100286699B1 (ko) 질화갈륨계 3-5족 화합물 반도체 발광디바이스 및 그 제조방법
US8470621B2 (en) Method for fabricating a flip-chip semiconductor optoelectronic device
KR100833313B1 (ko) 질화갈륨계 발광다이오드 소자 및 그의 제조방법
US4447825A (en) III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer
US7781785B2 (en) Light emitting diode with plated substrate and method for producing the same
JP4121551B2 (ja) 発光素子の製造方法及び発光素子
JPH11177134A (ja) 半導体素子の製造方法及び半導体素子、並びに発光素子の製造方法及び発光素子
JP3047960B2 (ja) n型窒化物半導体の電極
JP2000315819A (ja) 半導体発光素子の製法
JP3239350B2 (ja) n型窒化物半導体層の電極
JPS6133277B2 (enrdf_load_stackoverflow)
JPS6134269B2 (enrdf_load_stackoverflow)
JPS6133278B2 (enrdf_load_stackoverflow)
US7518163B2 (en) Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof
JP4108439B2 (ja) 発光素子の製造方法及び発光素子
JP2007317913A (ja) 半導体発光素子およびその製造方法
JP2005203765A (ja) 窒化ガリウム系化合物半導体発光素子およびその負極
JP3187284B2 (ja) n型窒化物半導体層の電極
JP3144534B2 (ja) n型窒化物半導体層の電極
JPS5958877A (ja) 半導体発光装置
JPH06302858A (ja) GaP赤色発光素子基板及びその製造方法
US20050191777A1 (en) Method for producing light emitting diode with plated substrate
JP2006032837A (ja) 半導体発光素子
JPS61231760A (ja) 化合物半導体素子