JPS6134269B2 - - Google Patents

Info

Publication number
JPS6134269B2
JPS6134269B2 JP2339180A JP2339180A JPS6134269B2 JP S6134269 B2 JPS6134269 B2 JP S6134269B2 JP 2339180 A JP2339180 A JP 2339180A JP 2339180 A JP2339180 A JP 2339180A JP S6134269 B2 JPS6134269 B2 JP S6134269B2
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
type
electrode
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2339180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56120176A (en
Inventor
Noburo Yasuda
Masato Yamashita
Yasuhisa Oana
Norio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2339180A priority Critical patent/JPS56120176A/ja
Priority to EP81100621A priority patent/EP0035118B1/en
Priority to DE8181100621T priority patent/DE3172935D1/de
Priority to US06/230,679 priority patent/US4447825A/en
Publication of JPS56120176A publication Critical patent/JPS56120176A/ja
Publication of JPS6134269B2 publication Critical patent/JPS6134269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10W72/019—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10W72/59—
    • H10W72/884—
    • H10W72/934—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2339180A 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method Granted JPS56120176A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2339180A JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method
EP81100621A EP0035118B1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same
DE8181100621T DE3172935D1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same
US06/230,679 US4447825A (en) 1980-02-28 1981-02-02 III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2339180A JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Publications (2)

Publication Number Publication Date
JPS56120176A JPS56120176A (en) 1981-09-21
JPS6134269B2 true JPS6134269B2 (cg-RX-API-DMAC10.html) 1986-08-06

Family

ID=12109204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2339180A Granted JPS56120176A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Country Status (1)

Country Link
JP (1) JPS56120176A (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159626A (ja) * 1985-01-07 1986-07-19 Semiconductor Energy Lab Co Ltd 半導体装置

Also Published As

Publication number Publication date
JPS56120176A (en) 1981-09-21

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