JPS6133277B2 - - Google Patents

Info

Publication number
JPS6133277B2
JPS6133277B2 JP2338680A JP2338680A JPS6133277B2 JP S6133277 B2 JPS6133277 B2 JP S6133277B2 JP 2338680 A JP2338680 A JP 2338680A JP 2338680 A JP2338680 A JP 2338680A JP S6133277 B2 JPS6133277 B2 JP S6133277B2
Authority
JP
Japan
Prior art keywords
layer
junction
electrode
type gap
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2338680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56120174A (en
Inventor
Noburo Yasuda
Masato Yamashita
Yasuhisa Oana
Norio Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP2338680A priority Critical patent/JPS56120174A/ja
Priority to EP81100621A priority patent/EP0035118B1/en
Priority to DE8181100621T priority patent/DE3172935D1/de
Priority to US06/230,679 priority patent/US4447825A/en
Publication of JPS56120174A publication Critical patent/JPS56120174A/ja
Publication of JPS6133277B2 publication Critical patent/JPS6133277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10W72/019—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10W72/59—
    • H10W72/884—
    • H10W72/934—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2338680A 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method Granted JPS56120174A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2338680A JPS56120174A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method
EP81100621A EP0035118B1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same
DE8181100621T DE3172935D1 (en) 1980-02-28 1981-01-28 Iii - v group compound semiconductor light-emitting element and method of producing the same
US06/230,679 US4447825A (en) 1980-02-28 1981-02-02 III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2338680A JPS56120174A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Publications (2)

Publication Number Publication Date
JPS56120174A JPS56120174A (en) 1981-09-21
JPS6133277B2 true JPS6133277B2 (cg-RX-API-DMAC10.html) 1986-08-01

Family

ID=12109076

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2338680A Granted JPS56120174A (en) 1980-02-28 1980-02-28 Semiconductor luminous element of 3-5 group compound and its preparing method

Country Status (1)

Country Link
JP (1) JPS56120174A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182868A (ja) * 1982-04-20 1983-10-25 Sanyo Electric Co Ltd 化合物半導体の電極
JP2001298212A (ja) 2000-02-07 2001-10-26 Sharp Corp 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
JPS56120174A (en) 1981-09-21

Similar Documents

Publication Publication Date Title
JP2803742B2 (ja) 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
US8470621B2 (en) Method for fabricating a flip-chip semiconductor optoelectronic device
CN100375303C (zh) 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
US5767581A (en) Gallium nitride-based III-V group compound semiconductor
US20040124428A1 (en) Light emitting diode and method of making the same
US4447825A (en) III-V Group compound semiconductor light-emitting element having a doped tantalum barrier layer
US7781785B2 (en) Light emitting diode with plated substrate and method for producing the same
JPH11177134A (ja) 半導体素子の製造方法及び半導体素子、並びに発光素子の製造方法及び発光素子
JP4121551B2 (ja) 発光素子の製造方法及び発光素子
JP2914065B2 (ja) 青色発光素子及びその製造方法
JP5287837B2 (ja) 窒化ガリウム系化合物半導体発光素子およびその負極
JP2004103975A (ja) 光半導体素子の製造方法と光半導体素子およびその光半導体素子を実装した光半導体装置
JP2000315819A (ja) 半導体発光素子の製法
JP3239350B2 (ja) ｎ型窒化物半導体層の電極
JPS6133277B2 (cg-RX-API-DMAC10.html)
JPH0969623A (ja) ｎ型窒化物半導体の電極
JPS6134269B2 (cg-RX-API-DMAC10.html)
JPS6034827B2 (ja) リン化ガリウム発光素子
JPS6133278B2 (cg-RX-API-DMAC10.html)
JP2005203765A (ja) 窒化ガリウム系化合物半導体発光素子およびその負極
JP3187284B2 (ja) ｎ型窒化物半導体層の電極
JP2001085741A (ja) 半導体素子および発光半導体素子
JP3144534B2 (ja) ｎ型窒化物半導体層の電極
JP2007317913A (ja) 半導体発光素子およびその製造方法
US20050191777A1 (en) Method for producing light emitting diode with plated substrate