JPS6134263B2 - - Google Patents
Info
- Publication number
- JPS6134263B2 JPS6134263B2 JP55098549A JP9854980A JPS6134263B2 JP S6134263 B2 JPS6134263 B2 JP S6134263B2 JP 55098549 A JP55098549 A JP 55098549A JP 9854980 A JP9854980 A JP 9854980A JP S6134263 B2 JPS6134263 B2 JP S6134263B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- image sensor
- signal charges
- semiconductor layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9854980A JPS5723282A (en) | 1980-07-18 | 1980-07-18 | Solid state image sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9854980A JPS5723282A (en) | 1980-07-18 | 1980-07-18 | Solid state image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5723282A JPS5723282A (en) | 1982-02-06 |
JPS6134263B2 true JPS6134263B2 (enrdf_load_stackoverflow) | 1986-08-06 |
Family
ID=14222763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9854980A Granted JPS5723282A (en) | 1980-07-18 | 1980-07-18 | Solid state image sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723282A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2656918B2 (ja) * | 1985-11-12 | 1997-09-24 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP2604715B2 (ja) * | 1985-11-12 | 1997-04-30 | ソニー株式会社 | 固体撮像装置の製造方法 |
JP2653780B2 (ja) * | 1985-11-12 | 1997-09-17 | ソニー株式会社 | 固体撮像装置の製造方法 |
JPS63133666A (ja) * | 1986-11-26 | 1988-06-06 | Matsushita Electronics Corp | 固体撮像装置およびその製造方法 |
JPH03288474A (ja) * | 1990-04-04 | 1991-12-18 | Matsushita Electron Corp | アクティブマトリクス型液晶表示装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5823992B2 (ja) * | 1977-01-24 | 1983-05-18 | 株式会社日立製作所 | 固体撮像装置 |
JPS53122316A (en) * | 1977-04-01 | 1978-10-25 | Hitachi Ltd | Solid state pickup device |
JPS5917581B2 (ja) * | 1978-01-13 | 1984-04-21 | 株式会社東芝 | 固体撮像装置 |
-
1980
- 1980-07-18 JP JP9854980A patent/JPS5723282A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5723282A (en) | 1982-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4373167A (en) | Solid state image sensor with overflow protection and high resolution | |
US6169318B1 (en) | CMOS imager with improved sensitivity | |
US5043783A (en) | Solid state image sensor | |
US5306931A (en) | CCD image sensor with improved antiblooming characteristics | |
EP0186162B1 (en) | Solid state image sensor | |
US4686555A (en) | Solid state image sensor | |
JPH05505703A (ja) | インターライン転送ccdエリアイメージセンサにおけるブルーミング制御及びイメージラグの低減 | |
US4675549A (en) | Black and white reference and end-of-scan indicator for charge coupled devices | |
JP2858179B2 (ja) | Ccd映像素子 | |
US4974043A (en) | Solid-state image sensor | |
JPS6065565A (ja) | 固体撮像素子 | |
US4623909A (en) | Semiconductor photodetector | |
US4616249A (en) | Solid state image pick-up element of static induction transistor type | |
JPS6134263B2 (enrdf_load_stackoverflow) | ||
US4433343A (en) | Extrinsic infrared detector with dopant site charge-neutralization | |
US5170236A (en) | Layer-built solid state image sensing device | |
JPS6318387B2 (enrdf_load_stackoverflow) | ||
US5066994A (en) | Image sensor | |
JPS6089967A (ja) | 光電変換素子 | |
US5155362A (en) | Infra-red radiation imaging device arrangements | |
JPH0135546B2 (enrdf_load_stackoverflow) | ||
JPH04274367A (ja) | 固体撮像装置 | |
JPH0650774B2 (ja) | 固体撮像装置 | |
JPS5831670A (ja) | 固体撮像装置 | |
JPH01268164A (ja) | 固体撮像装置 |