JPS6129559B2 - - Google Patents
Info
- Publication number
- JPS6129559B2 JPS6129559B2 JP52148986A JP14898677A JPS6129559B2 JP S6129559 B2 JPS6129559 B2 JP S6129559B2 JP 52148986 A JP52148986 A JP 52148986A JP 14898677 A JP14898677 A JP 14898677A JP S6129559 B2 JPS6129559 B2 JP S6129559B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- integrated circuit
- semiconductor integrated
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP14898677A JPS5481086A (en) | 1977-12-12 | 1977-12-12 | Semiconductor integrated circuit | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP14898677A JPS5481086A (en) | 1977-12-12 | 1977-12-12 | Semiconductor integrated circuit | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS5481086A JPS5481086A (en) | 1979-06-28 | 
| JPS6129559B2 true JPS6129559B2 (cs) | 1986-07-07 | 
Family
ID=15465130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP14898677A Granted JPS5481086A (en) | 1977-12-12 | 1977-12-12 | Semiconductor integrated circuit | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS5481086A (cs) | 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS61149448U (cs) * | 1985-03-07 | 1986-09-16 | 
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS60176275A (ja) * | 1984-02-22 | 1985-09-10 | Nec Corp | 集積型半導体装置 | 
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS5258381A (en) * | 1975-11-08 | 1977-05-13 | Fujitsu Ltd | Counter circuit device of dual field effect transistor and gunn effect element | 
| JPS52146185A (en) * | 1976-05-28 | 1977-12-05 | Fujitsu Ltd | Semiconductor integrated circuit | 
- 
        1977
        - 1977-12-12 JP JP14898677A patent/JPS5481086A/ja active Granted
 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS61149448U (cs) * | 1985-03-07 | 1986-09-16 | 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS5481086A (en) | 1979-06-28 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| US6084255A (en) | Gate array semiconductor device | |
| US3436623A (en) | Insulated gate field effect transistor with plural overlapped gates | |
| US6051868A (en) | Semiconductor device | |
| JP2004520707A (ja) | ショットキーダイオード | |
| JPH01198076A (ja) | 半導体装置 | |
| US4639757A (en) | Power transistor structure having an emitter ballast resistance | |
| JPH0732196B2 (ja) | モノリシツク集積電力半導体装置 | |
| JPS63266882A (ja) | 縦型絶縁ゲ−ト電界効果トランジスタ | |
| JPS6129559B2 (cs) | ||
| US4864379A (en) | Bipolar transistor with field shields | |
| JP3638377B2 (ja) | 半導体装置 | |
| JP2627330B2 (ja) | 電圧降下制御ダイオード | |
| US4562451A (en) | Semiconductor device having a resistor region with an enhanced breakdown voltage | |
| JPH02862B2 (cs) | ||
| JPH0439786B2 (cs) | ||
| JPS5889864A (ja) | 絶縁ゲ−ト型半導体装置 | |
| JPH05243509A (ja) | 半導体装置 | |
| JPH0255953B2 (cs) | ||
| JPH0327534A (ja) | 接合型電界効果トランジスタ | |
| JPH01273346A (ja) | 半導体装置 | |
| JPS601843A (ja) | 半導体集積回路 | |
| JPS599955A (ja) | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 | |
| JPH0669433A (ja) | 半導体装置 | |
| JPH07202225A (ja) | 半導体装置 | |
| JPH0328835B2 (cs) |