JPS6128640B2 - - Google Patents
Info
- Publication number
- JPS6128640B2 JPS6128640B2 JP55149693A JP14969380A JPS6128640B2 JP S6128640 B2 JPS6128640 B2 JP S6128640B2 JP 55149693 A JP55149693 A JP 55149693A JP 14969380 A JP14969380 A JP 14969380A JP S6128640 B2 JPS6128640 B2 JP S6128640B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- temperature
- znse
- pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55149693A JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55149693A JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5777098A JPS5777098A (en) | 1982-05-14 |
| JPS6128640B2 true JPS6128640B2 (enExample) | 1986-07-01 |
Family
ID=15480740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55149693A Granted JPS5777098A (en) | 1980-10-24 | 1980-10-24 | Method and apparatus for growing znse in liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5777098A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62157231U (enExample) * | 1986-03-28 | 1987-10-06 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6041033B2 (ja) * | 1982-06-24 | 1985-09-13 | 財団法人 半導体研究振興会 | 結晶成長装置 |
| JPS6037077B2 (ja) * | 1982-07-02 | 1985-08-23 | 財団法人 半導体研究振興会 | ZnSeの結晶成長法 |
| JPS6050759B2 (ja) * | 1982-07-14 | 1985-11-09 | 財団法人 半導体研究振興会 | ZnSeのエピタキシヤル成長法及び成長装置 |
| JP4908348B2 (ja) * | 2007-08-24 | 2012-04-04 | ヤマハ発動機株式会社 | 自動二輪車 |
-
1980
- 1980-10-24 JP JP55149693A patent/JPS5777098A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62157231U (enExample) * | 1986-03-28 | 1987-10-06 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5777098A (en) | 1982-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2071062B1 (en) | Process for producing group iii element nitride crystal | |
| US8025728B2 (en) | Method for manufacturing single crystal of nitride | |
| EP0979883A1 (en) | Process for the preparation of single crystals of compound semiconductors, equipment therefor, and single crystals of compound semiconductors | |
| JPS6037076B2 (ja) | 3−6族化合物半導体の温度液相成長法 | |
| US4083748A (en) | Method of forming and growing a single crystal of a semiconductor compound | |
| CA1321124C (en) | Method for preparing single-crystal znse | |
| EP0751242A1 (en) | Process for bulk crystal growth | |
| US5015327A (en) | Method for producing semiconductive single crystal | |
| US5047112A (en) | Method for preparing homogeneous single crystal ternary III-V alloys | |
| US4968491A (en) | Apparatus for performing epitaxial growth of ZNSE crystal from melt thereof | |
| JP2000086398A (ja) | p型GaAs単結晶およびその製造方法 | |
| JP4248276B2 (ja) | Iii族窒化物の結晶製造方法 | |
| Sen et al. | Growth of Large-Diameter CdZnTe and CdTeSe Boules for Hg1− xCdxTe Epitaxy: Status and Prospects | |
| JP4426251B2 (ja) | Iii族窒化物の結晶製造方法 | |
| Foster et al. | Formation of built-in light-emitting junctions in solution-grown GaP containing shallow donors and acceptors | |
| US4180423A (en) | Method of manufacturing red light-emitting gallium phosphide device | |
| US5679151A (en) | Method for growing single crystal | |
| KR20250031162A (ko) | 산화갈륨 단결정 성장 방법 및 이를 통해 제조된 산화갈륨 단결정 | |
| JPH01145398A (ja) | 燐化ガリウムの液相エピタキシヤル成長方法 | |
| Isshiki | Bulk growth of widegap II–VI single crystals | |
| JP2610319B2 (ja) | ▲ii▼−▲vi▼族化合物半導体結晶の製造方法 | |
| GF | Wide-Bandga | |
| JPH08259398A (ja) | ZnSe単結晶の製造方法およびその製造装置 | |
| JPH08259397A (ja) | ZnSe単結晶の製造方法およびその製造装置 | |
| JPH08283099A (ja) | ZnSe単結晶の製造方法及び導電性ZnSe単結晶並びに単結晶基板 |